P

Inventor

JANG HYUN-SOON

KR38 patents
⚠️ This page may combine multiple inventors who share the name “JANG HYUN-SOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

36 patents
US6590822B2Jul 8, 2003

System and method for performing partial array self-refresh operation in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD136 citations99
US6819617B2Nov 16, 2004

System and method for performing partial array self-refresh operation in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD96 citations98
US6058063AMay 2, 2000

Integrated circuit memory devices having reduced power consumption requirements during standby mode operation

SAMSUNG ELECTRONICS CO LTD93 citations98
US6560158B2May 6, 2003

Power down voltage control method and apparatus

SAMSUNG ELECTRONICS CO LTD101 citations97
US5631871AMay 20, 1997

System for selecting one of a plurality of memory banks for use in an active cycle and all other banks for an inactive precharge cycle

SAMSUNG ELECTRONICS CO LTD84 citations97
US5590086ADec 31, 1996

Semiconductor memory having a plurality of I/O buses

SAMSUNG ELECTRONICS CO LTD92 citations97
US6343036B1Jan 29, 2002

Multi-bank dynamic random access memory devices having all bank precharge capability

SAMSUNG ELECTRONICS CO LTD41 citations96
US5838990ANov 17, 1998

Circuit in a semiconductor memory for programming operation modes of the memory

SAMSUNG ELECTRONICS CO LTD63 citations96
US5835956ANov 10, 1998

Synchronous dram having a plurality of latency modes

SAMSUNG ELECTRONICS CO LTD76 citations96
US5703828ADec 30, 1997

Semiconductor memory

SAMSUNG ELECTRONICS CO LTD52 citations96
US5568445AOct 22, 1996

Synchronous semiconductor memory device with a write latency control function

SAMSUNG ELECTRONICS CO LTD101 citations96
US5646899AJul 8, 1997

Bit line sensing circuit of a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD27 citations93
US7148563B2Dec 12, 2006

Multi-chip package for reducing parasitic load of pin

SAMSUNG ELECTRONICS CO LTD14 citations92
US6992943B2Jan 31, 2006

System and method for performing partial array self-refresh operation in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD32 citations92
US6510096B2Jan 21, 2003

Power down voltage control method and apparatus

SAMSUNG ELECTRONICS CO LTD44 citations92
US6326815B1Dec 4, 2001

Sense amplifier of semiconductor integrated circuit

SAMSUNG ELECTRONICS CO LTD32 citations92
US5999021ADec 7, 1999

Pad signal detecting circuit in a semiconductor device for detecting a reference voltage in a high-speed interface

SAMSUNG ELECTRONICS CO LTD31 citations92
US5535171AJul 9, 1996

Data output buffer of a semiconducter memory device

SAMSUNG ELECTRONICS CO LTD28 citations92
US5485426AJan 16, 1996

Semiconductor memory device having a structure for driving input/output lines at a high speed

SAMSUNG ELECTRONICS CO LTD27 citations92
US5355033AOct 11, 1994

Data input buffer circuit for use in a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD41 citations92
US5337277AAug 9, 1994

Row redundancy circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD40 citations92
US7746712B2Jun 29, 2010

Semiconductor memory device including post package repair control circuit and post package repair method

SAMSUNG ELECTRONICS CO LTD24 citations89
US5771200AJun 23, 1998

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD17 citations83
US7941714B2May 10, 2011

Parallel bit test apparatus and parallel bit test method capable of reducing test time

SAMSUNG ELECTRONICS CO LTD11 citations80
US7566958B2Jul 28, 2009

Multi-chip package for reducing parasitic load of pin

SAMSUNG ELECTRONICS CO LTD6 citations74
US6751132B2Jun 15, 2004

Semiconductor memory device and voltage generating method thereof

SAMSUNG ELECTRONICS CO LTD8 citations74
US6476646B2Nov 5, 2002

Sense amplifier of semiconductor integrated circuit

SAMSUNG ELECTRONICS CO LTD13 citations74
US6281745B1Aug 28, 2001

Internal power supply voltage generating circuit of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD11 citations74
US5812475ASep 22, 1998

Programmable refresh circuits and methods for integrated circuit memory devices

SAMSUNG ELECTRONICS CO LTD14 citations74
US5196913AMar 23, 1993

Input protection device for improving of delay time on input stage in semi-conductor devices

SAMSUNG ELECTRONICS CO LTD8 citations74
US6980036B2Dec 27, 2005

Semiconductor device comprising frequency multiplier of external clock and output buffer of test data and semiconductor test method

SAMSUNG ELECTRONICS CO LTD10 citations73
US7657713B2Feb 2, 2010

Memory using packet controller and memory

SAMSUNG ELECTRONICS CO LTD7 citations72
US7262479B2Aug 28, 2007

Layout structure of fuse bank of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD5 citations63
US7868438B2Jan 11, 2011

Multi-chip package for reducing parasitic load of pin

SAMSUNG ELECTRONICS CO LTD0 citations52
US5999031ADec 7, 1999

Semiconductor device with bus line loading compensation circuit

SAMSUNG ELECTRONICS CO LTD1 citations52
US5663913ASep 2, 1997

Semiconductor memory device having high speed parallel transmission line operation and a method for forming parallel transmission lines

SAMSUNG ELECTRONICS CO LTD1 citations52

KIM HONG-BEOM

1 patent

KIM KAB YONG

1 patent