Inventor
JANG HYUN-SOON
KR38 patents
⚠️ This page may combine multiple inventors who share the name “JANG HYUN-SOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
36 patentsUS6590822B2Jul 8, 2003
System and method for performing partial array self-refresh operation in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD136 citations99
US6819617B2Nov 16, 2004
System and method for performing partial array self-refresh operation in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD96 citations98
US6058063AMay 2, 2000
Integrated circuit memory devices having reduced power consumption requirements during standby mode operation
SAMSUNG ELECTRONICS CO LTD93 citations98
US6560158B2May 6, 2003
Power down voltage control method and apparatus
SAMSUNG ELECTRONICS CO LTD101 citations97
US5631871AMay 20, 1997
System for selecting one of a plurality of memory banks for use in an active cycle and all other banks for an inactive precharge cycle
SAMSUNG ELECTRONICS CO LTD84 citations97
US5590086ADec 31, 1996
Semiconductor memory having a plurality of I/O buses
SAMSUNG ELECTRONICS CO LTD92 citations97
US6343036B1Jan 29, 2002
Multi-bank dynamic random access memory devices having all bank precharge capability
SAMSUNG ELECTRONICS CO LTD41 citations96
US5838990ANov 17, 1998
Circuit in a semiconductor memory for programming operation modes of the memory
SAMSUNG ELECTRONICS CO LTD63 citations96
US5835956ANov 10, 1998
Synchronous dram having a plurality of latency modes
SAMSUNG ELECTRONICS CO LTD76 citations96
US5703828ADec 30, 1997
Semiconductor memory
SAMSUNG ELECTRONICS CO LTD52 citations96
US5568445AOct 22, 1996
Synchronous semiconductor memory device with a write latency control function
SAMSUNG ELECTRONICS CO LTD101 citations96
US5646899AJul 8, 1997
Bit line sensing circuit of a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD27 citations93
US7148563B2Dec 12, 2006
Multi-chip package for reducing parasitic load of pin
SAMSUNG ELECTRONICS CO LTD14 citations92
US6992943B2Jan 31, 2006
System and method for performing partial array self-refresh operation in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD32 citations92
US6510096B2Jan 21, 2003
Power down voltage control method and apparatus
SAMSUNG ELECTRONICS CO LTD44 citations92
US6326815B1Dec 4, 2001
Sense amplifier of semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD32 citations92
US5999021ADec 7, 1999
Pad signal detecting circuit in a semiconductor device for detecting a reference voltage in a high-speed interface
SAMSUNG ELECTRONICS CO LTD31 citations92
US5535171AJul 9, 1996
Data output buffer of a semiconducter memory device
SAMSUNG ELECTRONICS CO LTD28 citations92
US5485426AJan 16, 1996
Semiconductor memory device having a structure for driving input/output lines at a high speed
SAMSUNG ELECTRONICS CO LTD27 citations92
US5355033AOct 11, 1994
Data input buffer circuit for use in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD41 citations92
US5337277AAug 9, 1994
Row redundancy circuit for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD40 citations92
US7746712B2Jun 29, 2010
Semiconductor memory device including post package repair control circuit and post package repair method
SAMSUNG ELECTRONICS CO LTD24 citations89
US5771200AJun 23, 1998
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD17 citations83
US7941714B2May 10, 2011
Parallel bit test apparatus and parallel bit test method capable of reducing test time
SAMSUNG ELECTRONICS CO LTD11 citations80
US7566958B2Jul 28, 2009
Multi-chip package for reducing parasitic load of pin
SAMSUNG ELECTRONICS CO LTD6 citations74
US6751132B2Jun 15, 2004
Semiconductor memory device and voltage generating method thereof
SAMSUNG ELECTRONICS CO LTD8 citations74
US6476646B2Nov 5, 2002
Sense amplifier of semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD13 citations74
US6281745B1Aug 28, 2001
Internal power supply voltage generating circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD11 citations74
US5812475ASep 22, 1998
Programmable refresh circuits and methods for integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD14 citations74
US5196913AMar 23, 1993
Input protection device for improving of delay time on input stage in semi-conductor devices
SAMSUNG ELECTRONICS CO LTD8 citations74
US6980036B2Dec 27, 2005
Semiconductor device comprising frequency multiplier of external clock and output buffer of test data and semiconductor test method
SAMSUNG ELECTRONICS CO LTD10 citations73
US7657713B2Feb 2, 2010
Memory using packet controller and memory
SAMSUNG ELECTRONICS CO LTD7 citations72
US7262479B2Aug 28, 2007
Layout structure of fuse bank of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations63
US7868438B2Jan 11, 2011
Multi-chip package for reducing parasitic load of pin
SAMSUNG ELECTRONICS CO LTD0 citations52
US5999031ADec 7, 1999
Semiconductor device with bus line loading compensation circuit
SAMSUNG ELECTRONICS CO LTD1 citations52
US5663913ASep 2, 1997
Semiconductor memory device having high speed parallel transmission line operation and a method for forming parallel transmission lines
SAMSUNG ELECTRONICS CO LTD1 citations52