Inventor
UENOYAMA TAKESHI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “UENOYAMA TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
25 patentsUS6399970B2Jun 4, 2002
FET having a Si/SiGeC heterojunction channel
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD279 citations99
US6190975B1Feb 20, 2001
Method of forming HCMOS devices with a silicon-germanium-carbon compound semiconductor layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD230 citations99
US6228720B1May 8, 2001
Method for making insulated-gate semiconductor element
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD120 citations98
US5691936ANov 25, 1997
Magnetoresistive element and memory element
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD126 citations98
US6989553B2Jan 24, 2006
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US6674100B2Jan 6, 2004
SiGeC-based CMOSFET with separate heterojunctions
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD58 citations96
US5787104AJul 28, 1998
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD75 citations96
US6864507B2Mar 8, 2005
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6690035B1Feb 10, 2004
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6674131B2Jan 6, 2004
Semiconductor power device for high-temperature applications
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6617653B1Sep 9, 2003
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US7368766B2May 6, 2008
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations92
US6861672B2Mar 1, 2005
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations92
US6350999B1Feb 26, 2002
Electron-emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations92
US6326638B1Dec 4, 2001
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US6081541AJun 27, 2000
Semiconductor laser device and optical disk apparatus using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US6072817AJun 6, 2000
Semiconductor laser device and optical disk apparatus using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US5705831AJan 6, 1998
Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations92
US6624462B1Sep 23, 2003
Dielectric film and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations91
US6566692B2May 20, 2003
Electron device and junction transistor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6055253AApr 25, 2000
Semiconductor laser device with an optical guide layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US5665978ASep 9, 1997
Nonlinear element and bistable memory device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US5600667AFeb 4, 1997
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US5502739AMar 26, 1996
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US6141364AOct 31, 2000
Semiconductor laser device and optical disk apparatus using the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63