Inventor
LEE DUCK-HYUNG
KR34 patents
⚠️ This page may combine multiple inventors who share the name “LEE DUCK-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS6091120AJul 18, 2000
Integrated circuit field effect transisters including multilayer gate electrodes having narrow and wide conductive layers
SAMSUNG ELECTRONICS CO LTD51 citations95
US6503789B1Jan 7, 2003
Contact structure for a semiconductor device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD16 citations93
US6171942B1Jan 9, 2001
Methods of forming electrically conductive lines in integrated circuit memories using self-aligned silicide blocking layers
SAMSUNG ELECTRONICS CO LTD19 citations93
US7750280B2Jul 6, 2010
Back-illuminated image sensor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD34 citations92
US7375389B2May 20, 2008
Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US6544873B1Apr 8, 2003
Methods of fabricating integrated circuit field effect transistors including multilayer gate electrodes having narrow and wide conductive layers
SAMSUNG ELECTRONICS CO LTD17 citations92
US6015748AJan 18, 2000
Methods of fabricating integrated circuit memory devices including silicide blocking layers on memory cell transistor source and drain regions
SAMSUNG ELECTRONICS CO LTD31 citations92
US6326669B1Dec 4, 2001
Semiconductor device and method of making the same
SAMSUNG ELECTRONICS CO LTD23 citations89
US6162675ADec 19, 2000
Method of preventing misalignment of selective silicide layer in the manufacture of a DRAM device and the DRAM device formed thereby
SAMSUNG ELECTRONICS CO LTD24 citations89
US8378402B2Feb 19, 2013
CMOS image sensors including backside illumination structure and method of manufacturing image sensor
SAMSUNG ELECTRONICS CO LTD7 citations84
US7825438B2Nov 2, 2010
CMOS image sensor having drive transistor with increased gate surface area and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations83
US7875947B2Jan 25, 2011
Filter, color filter array, method of manufacturing the color filter array, and image sensor
SAMSUNG ELECTRONICS CO LTD14 citations80
US6686239B2Feb 3, 2004
Capacitors of semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD17 citations77
US7531790B2May 12, 2009
Image sensor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations74
US6232155B1May 15, 2001
Methods of fabricating semiconductor-on-insulator devices including alternating thin and thick film semiconductor regions on an insulating layer
SAMSUNG ELECTRONICS CO LTD9 citations74
US6020615AFeb 1, 2000
Semiconductor-on-insulator devices including alternating thin and thick film semiconductor stripes on an insulating layer
SAMSUNG ELECTRONICS CO LTD13 citations74
US9111823B2Aug 18, 2015
Image sensor
SAMSUNG ELECTRONICS CO LTD2 citations63
US7675099B2Mar 9, 2010
Image sensor and method of forming the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7671314B2Mar 2, 2010
Image sensor including active pixel sensor array with photoelectric conversion region
SAMSUNG ELECTRONICS CO LTD6 citations63
US7541628B2Jun 2, 2009
Image sensors including active pixel sensor arrays
SAMSUNG ELECTRONICS CO LTD5 citations63
US6787857B2Sep 7, 2004
Contact structure a semiconductor device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US6181014B1Jan 30, 2001
Integrated circuit memory devices having highly integrated SOI memory cells therein
SAMSUNG ELECTRONICS CO LTD5 citations63
US7667183B2Feb 23, 2010
Image sensor with high fill factor pixels and method for forming an image sensor
SAMSUNG ELECTRONICS CO LTD5 citations62
US7898584B2Mar 1, 2011
Image sensors for reducing flicker and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations58
US6660594B2Dec 9, 2003
Methods of forming integrated circuit devices having gate oxide layers with different thicknesses and integrated circuit devices formed thereby
SAMSUNG ELECTRONICS CO LTD0 citations52