P

Inventor

LEE DUCK-HYUNG

KR34 patents
⚠️ This page may combine multiple inventors who share the name “LEE DUCK-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

25 patents
US6091120AJul 18, 2000

Integrated circuit field effect transisters including multilayer gate electrodes having narrow and wide conductive layers

SAMSUNG ELECTRONICS CO LTD51 citations95
US6503789B1Jan 7, 2003

Contact structure for a semiconductor device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD16 citations93
US6171942B1Jan 9, 2001

Methods of forming electrically conductive lines in integrated circuit memories using self-aligned silicide blocking layers

SAMSUNG ELECTRONICS CO LTD19 citations93
US7750280B2Jul 6, 2010

Back-illuminated image sensor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD34 citations92
US7375389B2May 20, 2008

Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US6544873B1Apr 8, 2003

Methods of fabricating integrated circuit field effect transistors including multilayer gate electrodes having narrow and wide conductive layers

SAMSUNG ELECTRONICS CO LTD17 citations92
US6015748AJan 18, 2000

Methods of fabricating integrated circuit memory devices including silicide blocking layers on memory cell transistor source and drain regions

SAMSUNG ELECTRONICS CO LTD31 citations92
US6326669B1Dec 4, 2001

Semiconductor device and method of making the same

SAMSUNG ELECTRONICS CO LTD23 citations89
US6162675ADec 19, 2000

Method of preventing misalignment of selective silicide layer in the manufacture of a DRAM device and the DRAM device formed thereby

SAMSUNG ELECTRONICS CO LTD24 citations89
US8378402B2Feb 19, 2013

CMOS image sensors including backside illumination structure and method of manufacturing image sensor

SAMSUNG ELECTRONICS CO LTD7 citations84
US7825438B2Nov 2, 2010

CMOS image sensor having drive transistor with increased gate surface area and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations83
US7875947B2Jan 25, 2011

Filter, color filter array, method of manufacturing the color filter array, and image sensor

SAMSUNG ELECTRONICS CO LTD14 citations80
US6686239B2Feb 3, 2004

Capacitors of semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD17 citations77
US7531790B2May 12, 2009

Image sensor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations74
US6232155B1May 15, 2001

Methods of fabricating semiconductor-on-insulator devices including alternating thin and thick film semiconductor regions on an insulating layer

SAMSUNG ELECTRONICS CO LTD9 citations74
US6020615AFeb 1, 2000

Semiconductor-on-insulator devices including alternating thin and thick film semiconductor stripes on an insulating layer

SAMSUNG ELECTRONICS CO LTD13 citations74
US9111823B2Aug 18, 2015

Image sensor

SAMSUNG ELECTRONICS CO LTD2 citations63
US7675099B2Mar 9, 2010

Image sensor and method of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations63
US7671314B2Mar 2, 2010

Image sensor including active pixel sensor array with photoelectric conversion region

SAMSUNG ELECTRONICS CO LTD6 citations63
US7541628B2Jun 2, 2009

Image sensors including active pixel sensor arrays

SAMSUNG ELECTRONICS CO LTD5 citations63
US6787857B2Sep 7, 2004

Contact structure a semiconductor device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US6181014B1Jan 30, 2001

Integrated circuit memory devices having highly integrated SOI memory cells therein

SAMSUNG ELECTRONICS CO LTD5 citations63
US7667183B2Feb 23, 2010

Image sensor with high fill factor pixels and method for forming an image sensor

SAMSUNG ELECTRONICS CO LTD5 citations62
US7898584B2Mar 1, 2011

Image sensors for reducing flicker and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations58
US6660594B2Dec 9, 2003

Methods of forming integrated circuit devices having gate oxide layers with different thicknesses and integrated circuit devices formed thereby

SAMSUNG ELECTRONICS CO LTD0 citations52

MOON CHANG-ROK

1 patent

LEE YUN-KI

1 patent

PTC THERAPEUTICS INC

1 patent

KIM HONG-KI

1 patent

KIM GI-BUM

1 patent

KOREA INST SCI & TECH

1 patent

LENNOX WILLIAM

1 patent

AHN YU-JIN

1 patent

NOH HYUN-PIL

1 patent