Inventor
SHONE FUCHIA
TW26 patents
⚠️ This page may combine multiple inventors who share the name “SHONE FUCHIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
24 patentsUS5526307AJun 11, 1996
Flash EPROM integrated circuit architecture
MACRONIX INT CO LTD272 citations98
US5399891AMar 21, 1995
Floating gate or flash EPROM transistor array having contactless source and drain diffusions
MACRONIX INT CO LTD145 citations98
US5836772ANov 17, 1998
Interpoly dielectric process
MACRONIX INT CO LTD96 citations97
US5539688AJul 23, 1996
Fast pre-programming circuit for floating gate memory
MACRONIX INT CO LTD88 citations97
US5963476AOct 5, 1999
Fowler-Nordheim (F-N) tunneling for pre-programming in a floating gate memory device
MACRONIX INT CO LTD88 citations96
US5778440AJul 7, 1998
Floating gate memory device and method for terminating a program load cycle upon detecting a predetermined address/data pattern
MACRONIX INT CO LTD140 citations96
US5745410AApr 28, 1998
Method and system for soft programming algorithm
MACRONIX INT CO LTD137 citations96
US5633185AMay 27, 1997
Method of making a non-volatile memory cell
MACRONIX INT CO LTD61 citations96
US5563823AOct 8, 1996
Fast FLASH EPROM programming and pre-programming circuit design
MACRONIX INT CO LTD66 citations96
US6031771AFeb 29, 2000
Memory redundancy circuit using single polysilicon floating gate transistors as redundancy elements
MACRONIX INT CO LTD47 citations92
US5834351ANov 10, 1998
Nitridation process with peripheral region protection
MACRONIX INT CO LTD23 citations92
US5821909AOct 13, 1998
Fast flash EPROM programming and pre-programming circuit design
MACRONIX INT CO LTD18 citations92
US5822243AOct 13, 1998
Dual mode memory with embedded ROM
MACRONIX INT CO LTD25 citations92
US5699298ADec 16, 1997
Flash memory erase with controlled band-to-band tunneling current
MACRONIX INT CO LTD41 citations92
US5691938ANov 25, 1997
Non-volatile memory cell and array architecture
MACRONIX INT CO LTD31 citations92
US6119226ASep 12, 2000
Memory supporting multiple address protocols
MACRONIX INT CO LTD27 citations91
US5619052AApr 8, 1997
Interpoly dielectric structure in EEPROM device
MACRONIX INT CO LTD47 citations91
US6400634B1Jun 4, 2002
Technique for increasing endurance of integrated circuit memory
MACRONIX INT CO LTD16 citations83
US5956273ASep 21, 1999
Fast flash EPROM programming and pre-programming circuit design
MACRONIX INT CO LTD12 citations82
US5563822AOct 8, 1996
Fast flash EPROM programming and pre-programming circuit design
MACRONIX INT CO LTD13 citations82
US5453391ASep 26, 1995
Method for manufacturing a contactless floating gate transistor array
MACRONIX INT CO LTD14 citations82
US6004848ADec 21, 1999
Method of forming a multi-level memory array with channel bias algorithm
MACRONIX INT CO LTD13 citations74
US6166956ADec 26, 2000
Fast flash EPROM programming and pre-programming circuit design
MACRONIX INT CO LTD6 citations73
US5592000AJan 7, 1997
Non-volatile semiconductor memory device programmable and erasable at low voltage
MACRONIX INT CO LTD15 citations73