P

Inventor

LEE JUNG-BAE

KR130 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNG-BAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

43 patents
US8050332B2Nov 1, 2011

System and method for selectively performing single-ended and differential signaling

SAMSUNG ELECTRONICS CO LTD125 citations99
US6650594B1Nov 18, 2003

Device and method for selecting power down exit

SAMSUNG ELECTRONICS CO LTD155 citations99
US6151271ANov 21, 2000

Integrated circuit memory devices having data selection circuits therein which are compatible with single and dual rate mode operation and methods of operating same

SAMSUNG ELECTRONICS CO LTD134 citations99
US6078546AJun 20, 2000

Synchronous semiconductor memory device with double data rate scheme

SAMSUNG ELECTRONICS CO LTD155 citations99
US7085336B2Aug 1, 2006

Signal transmission circuit and method for equalizing disparate delay times dynamically, and data latch circuit of semiconductor device implementing the same

SAMSUNG ELECTRONICS CO LTD82 citations98
US6819602B2Nov 16, 2004

Multimode data buffer and method for controlling propagation delay time

SAMSUNG ELECTRONICS CO LTD101 citations98
US6678860B1Jan 13, 2004

Integrated circuit memory devices having error checking and correction circuits therein and methods of operating same

SAMSUNG ELECTRONICS CO LTD88 citations98
US6636446B2Oct 21, 2003

Semiconductor memory device having write latency operation and method thereof

SAMSUNG ELECTRONICS CO LTD100 citations98
US6466071B2Oct 15, 2002

Methods and circuits for correcting a duty-cycle of a signal

SAMSUNG ELECTRONICS CO LTD79 citations98
US6373913B1Apr 16, 2002

Internal clock signal generator including circuit for accurately synchronizing internal clock signal with external clock signal

SAMSUNG ELECTRONICS CO LTD117 citations98
US6262938B1Jul 17, 2001

Synchronous DRAM having posted CAS latency and method for controlling CAS latency

SAMSUNG ELECTRONICS CO LTD135 citations98
US6240039B1May 29, 2001

Semiconductor memory device and driving signal generator therefor

SAMSUNG ELECTRONICS CO LTD99 citations97
US7269043B2Sep 11, 2007

Memory module and impedance calibration method of semiconductor memory device

SAMSUNG ELECTRONICS CO LTD57 citations96
US7034565B2Apr 25, 2006

On-die termination circuit and method for reducing on-chip DC current, and memory system including memory device having the same

SAMSUNG ELECTRONICS CO LTD61 citations96
US6728162B2Apr 27, 2004

Data input circuit and method for synchronous semiconductor memory device

SAMSUNG ELECTRONICS CO LTD55 citations96
US5920511AJul 6, 1999

High-speed data input circuit for a synchronous memory device

SAMSUNG ELECTRONICS CO LTD58 citations96
US7999367B2Aug 16, 2011

Stacked memory device

SAMSUNG ELECTRONICS CO LTD42 citations93
US7830692B2Nov 9, 2010

Multi-chip memory device with stacked memory chips, method of stacking memory chips, and method of controlling operation of multi-chip package memory

SAMSUNG ELECTRONICS CO LTD41 citations93
US7716401B2May 11, 2010

Memory module capable of improving the integrity of signals transmitted through a data bus and a command/address bus, and a memory system including the same

SAMSUNG ELECTRONICS CO LTD35 citations93
US6879536B2Apr 12, 2005

Semiconductor memory device and system outputting refresh flag

SAMSUNG ELECTRONICS CO LTD20 citations93
US6564287B1May 13, 2003

Semiconductor memory device having a fixed CAS latency and/or burst length

SAMSUNG ELECTRONICS CO LTD30 citations93
US6477107B1Nov 5, 2002

Integrated circuit memory devices having data selection circuits therein which are compatible with single and dual data rate mode operation and methods of operating same

SAMSUNG ELECTRONICS CO LTD39 citations93
US6414517B1Jul 2, 2002

Input buffer circuits with input signal boost capability and methods of operation thereof

SAMSUNG ELECTRONICS CO LTD29 citations93
US6018259AJan 25, 2000

Phase locked delay circuit

SAMSUNG ELECTRONICS CO LTD37 citations93
US5844438ADec 1, 1998

Circuit for generating an internal clock for data output buffers in a synchronous DRAM devices

SAMSUNG ELECTRONICS CO LTD23 citations93
US7016237B2Mar 21, 2006

Data input circuit and method for synchronous semiconductor memory device

SAMSUNG ELECTRONICS CO LTD27 citations92
US6380799B1Apr 30, 2002

Internal voltage generation circuit having stable operating characteristics at low external supply voltages

SAMSUNG ELECTRONICS CO LTD27 citations92
US7164615B2Jan 16, 2007

Semiconductor memory device performing auto refresh in the self refresh mode

SAMSUNG ELECTRONICS CO LTD48 citations91
US6337809B1Jan 8, 2002

Semiconductor memory device capable of improving data processing speed and efficiency of a data input and output pin and related method for controlling read and write

SAMSUNG ELECTRONICS CO LTD46 citations91
US6075384AJun 13, 2000

Current-mode bidirectional input/output buffer

SAMSUNG ELECTRONICS CO LTD25 citations91
US9235466B2Jan 12, 2016

Memory devices with selective error correction code

SAMSUNG ELECTRONICS CO LTD14 citations84
US9147461B1Sep 29, 2015

Semiconductor memory device performing a refresh operation, and memory system including the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US9082504B2Jul 14, 2015

Semiconductor memory device storing refresh period information and operating method thereof

SAMSUNG ELECTRONICS CO LTD7 citations84
US8020068B2Sep 13, 2011

Memory system and command handling method

SAMSUNG ELECTRONICS CO LTD7 citations84
US7996590B2Aug 9, 2011

Semiconductor memory module and semiconductor memory system having termination resistor units

SAMSUNG ELECTRONICS CO LTD10 citations84
US7990171B2Aug 2, 2011

Stacked semiconductor apparatus with configurable vertical I/O

SAMSUNG ELECTRONICS CO LTD14 citations84
US7948272B2May 24, 2011

Input buffer for detecting an input signal

SAMSUNG ELECTRONICS CO LTD8 citations84
US7930492B2Apr 19, 2011

Memory system having low power consumption

SAMSUNG ELECTRONICS CO LTD18 citations84
US7692983B2Apr 6, 2010

Memory system mounted directly on board and associated method

SAMSUNG ELECTRONICS CO LTD16 citations84
US7586546B2Sep 8, 2009

Video signal processing circuit having a bypass mode and display apparatus comprising the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7577760B2Aug 18, 2009

Memory systems, modules, controllers and methods using dedicated data and control busses

SAMSUNG ELECTRONICS CO LTD16 citations84
US7296110B2Nov 13, 2007

Memory system and data channel initialization method for memory system

SAMSUNG ELECTRONICS CO LTD12 citations84
US7259978B2Aug 21, 2007

Semiconductor memory devices and signal line arrangements and related methods

SAMSUNG ELECTRONICS CO LTD12 citations84

CHUNG HOE-JU

3 patents

KIM HO-YOUNG

1 patent

LEE JUNG BAE

1 patent

PARK DUK-HA

1 patent

LEE DONG-HYUK

1 patent

Showing the top 50 of 130 patents by PatentIndex Score.