Inventor
LEE JUNG-BAE
KR130 patents
⚠️ This page may combine multiple inventors who share the name “LEE JUNG-BAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
43 patentsUS8050332B2Nov 1, 2011
System and method for selectively performing single-ended and differential signaling
SAMSUNG ELECTRONICS CO LTD125 citations99
US6650594B1Nov 18, 2003
Device and method for selecting power down exit
SAMSUNG ELECTRONICS CO LTD155 citations99
US6151271ANov 21, 2000
Integrated circuit memory devices having data selection circuits therein which are compatible with single and dual rate mode operation and methods of operating same
SAMSUNG ELECTRONICS CO LTD134 citations99
US6078546AJun 20, 2000
Synchronous semiconductor memory device with double data rate scheme
SAMSUNG ELECTRONICS CO LTD155 citations99
US7085336B2Aug 1, 2006
Signal transmission circuit and method for equalizing disparate delay times dynamically, and data latch circuit of semiconductor device implementing the same
SAMSUNG ELECTRONICS CO LTD82 citations98
US6819602B2Nov 16, 2004
Multimode data buffer and method for controlling propagation delay time
SAMSUNG ELECTRONICS CO LTD101 citations98
US6678860B1Jan 13, 2004
Integrated circuit memory devices having error checking and correction circuits therein and methods of operating same
SAMSUNG ELECTRONICS CO LTD88 citations98
US6636446B2Oct 21, 2003
Semiconductor memory device having write latency operation and method thereof
SAMSUNG ELECTRONICS CO LTD100 citations98
US6466071B2Oct 15, 2002
Methods and circuits for correcting a duty-cycle of a signal
SAMSUNG ELECTRONICS CO LTD79 citations98
US6373913B1Apr 16, 2002
Internal clock signal generator including circuit for accurately synchronizing internal clock signal with external clock signal
SAMSUNG ELECTRONICS CO LTD117 citations98
US6262938B1Jul 17, 2001
Synchronous DRAM having posted CAS latency and method for controlling CAS latency
SAMSUNG ELECTRONICS CO LTD135 citations98
US6240039B1May 29, 2001
Semiconductor memory device and driving signal generator therefor
SAMSUNG ELECTRONICS CO LTD99 citations97
US7269043B2Sep 11, 2007
Memory module and impedance calibration method of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD57 citations96
US7034565B2Apr 25, 2006
On-die termination circuit and method for reducing on-chip DC current, and memory system including memory device having the same
SAMSUNG ELECTRONICS CO LTD61 citations96
US6728162B2Apr 27, 2004
Data input circuit and method for synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD55 citations96
US5920511AJul 6, 1999
High-speed data input circuit for a synchronous memory device
SAMSUNG ELECTRONICS CO LTD58 citations96
US7999367B2Aug 16, 2011
Stacked memory device
SAMSUNG ELECTRONICS CO LTD42 citations93
US7830692B2Nov 9, 2010
Multi-chip memory device with stacked memory chips, method of stacking memory chips, and method of controlling operation of multi-chip package memory
SAMSUNG ELECTRONICS CO LTD41 citations93
US7716401B2May 11, 2010
Memory module capable of improving the integrity of signals transmitted through a data bus and a command/address bus, and a memory system including the same
SAMSUNG ELECTRONICS CO LTD35 citations93
US6879536B2Apr 12, 2005
Semiconductor memory device and system outputting refresh flag
SAMSUNG ELECTRONICS CO LTD20 citations93
US6564287B1May 13, 2003
Semiconductor memory device having a fixed CAS latency and/or burst length
SAMSUNG ELECTRONICS CO LTD30 citations93
US6477107B1Nov 5, 2002
Integrated circuit memory devices having data selection circuits therein which are compatible with single and dual data rate mode operation and methods of operating same
SAMSUNG ELECTRONICS CO LTD39 citations93
US6414517B1Jul 2, 2002
Input buffer circuits with input signal boost capability and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD29 citations93
US6018259AJan 25, 2000
Phase locked delay circuit
SAMSUNG ELECTRONICS CO LTD37 citations93
US5844438ADec 1, 1998
Circuit for generating an internal clock for data output buffers in a synchronous DRAM devices
SAMSUNG ELECTRONICS CO LTD23 citations93
US7016237B2Mar 21, 2006
Data input circuit and method for synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD27 citations92
US6380799B1Apr 30, 2002
Internal voltage generation circuit having stable operating characteristics at low external supply voltages
SAMSUNG ELECTRONICS CO LTD27 citations92
US7164615B2Jan 16, 2007
Semiconductor memory device performing auto refresh in the self refresh mode
SAMSUNG ELECTRONICS CO LTD48 citations91
US6337809B1Jan 8, 2002
Semiconductor memory device capable of improving data processing speed and efficiency of a data input and output pin and related method for controlling read and write
SAMSUNG ELECTRONICS CO LTD46 citations91
US6075384AJun 13, 2000
Current-mode bidirectional input/output buffer
SAMSUNG ELECTRONICS CO LTD25 citations91
US9235466B2Jan 12, 2016
Memory devices with selective error correction code
SAMSUNG ELECTRONICS CO LTD14 citations84
US9147461B1Sep 29, 2015
Semiconductor memory device performing a refresh operation, and memory system including the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US9082504B2Jul 14, 2015
Semiconductor memory device storing refresh period information and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations84
US8020068B2Sep 13, 2011
Memory system and command handling method
SAMSUNG ELECTRONICS CO LTD7 citations84
US7996590B2Aug 9, 2011
Semiconductor memory module and semiconductor memory system having termination resistor units
SAMSUNG ELECTRONICS CO LTD10 citations84
US7990171B2Aug 2, 2011
Stacked semiconductor apparatus with configurable vertical I/O
SAMSUNG ELECTRONICS CO LTD14 citations84
US7948272B2May 24, 2011
Input buffer for detecting an input signal
SAMSUNG ELECTRONICS CO LTD8 citations84
US7930492B2Apr 19, 2011
Memory system having low power consumption
SAMSUNG ELECTRONICS CO LTD18 citations84
US7692983B2Apr 6, 2010
Memory system mounted directly on board and associated method
SAMSUNG ELECTRONICS CO LTD16 citations84
US7586546B2Sep 8, 2009
Video signal processing circuit having a bypass mode and display apparatus comprising the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7577760B2Aug 18, 2009
Memory systems, modules, controllers and methods using dedicated data and control busses
SAMSUNG ELECTRONICS CO LTD16 citations84
US7296110B2Nov 13, 2007
Memory system and data channel initialization method for memory system
SAMSUNG ELECTRONICS CO LTD12 citations84
US7259978B2Aug 21, 2007
Semiconductor memory devices and signal line arrangements and related methods
SAMSUNG ELECTRONICS CO LTD12 citations84
CHUNG HOE-JU
3 patentsUS8654864B2Feb 18, 2014
System and method for selectively performing single-ended and differential signaling
CHUNG HOE-JU5 citations84
US8446988B2May 21, 2013
System and method for selectively performing single-ended and differential signaling
CHUNG HOE-JU7 citations84
US8112680B2Feb 7, 2012
System and device with error detection/correction process and method outputting data
CHUNG HOE-JU16 citations84
KIM HO-YOUNG
1 patentLEE JUNG BAE
1 patentPARK DUK-HA
1 patentLEE DONG-HYUK
1 patentShowing the top 50 of 130 patents by PatentIndex Score.