Inventor
LIN YUNG-FENG
TW60 patents
⚠️ This page may combine multiple inventors who share the name “LIN YUNG-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
34 patentsUS7447068B2Nov 4, 2008
Method for programming a multilevel memory
MACRONIX INT CO LTD245 citations97
US7236061B2Jun 26, 2007
Temperature compensated refresh clock circuit for memory circuits
MACRONIX INT CO LTD19 citations92
US7863934B2Jan 4, 2011
Adjusting method and circuit using the same
MACRONIX INT CO LTD19 citations84
US7786761B2Aug 31, 2010
Output buffer device
MACRONIX INT CO LTD9 citations84
US7738296B2Jun 15, 2010
Method for reading nonvolatile memory at power-on stage
MACRONIX INT CO LTD11 citations84
US7724595B2May 25, 2010
Current-mode sense amplifier and sense amplifying method
MACRONIX INT CO LTD9 citations84
US7599220B2Oct 6, 2009
Charge trapping memory and accessing method thereof
MACRONIX INT CO LTD12 citations84
US7483306B2Jan 27, 2009
Fast and accurate sensing amplifier for low voltage semiconductor memory
MACRONIX INT CO LTD8 citations84
US7339846B2Mar 4, 2008
Method and apparatus for reading data from nonvolatile memory
MACRONIX INT CO LTD12 citations84
US11710519B2Jul 25, 2023
High density memory with reference memory using grouped cells and corresponding operations
MACRONIX INT CO LTD5 citations73
US11302366B2Apr 12, 2022
Method and system for enhanced read performance in low pin count interface
MACRONIX INT CO LTD2 citations73
US9412425B2Aug 9, 2016
Device and method for improving reading speed of memory
MACRONIX INT CO LTD3 citations70
US11605431B2Mar 14, 2023
Memory device and operation method thereof
MACRONIX INT CO LTD0 citations63
US7830721B2Nov 9, 2010
Memory and reading method thereof
MACRONIX INT CO LTD2 citations63
US7697349B2Apr 13, 2010
Word line boost circuit and method
MACRONIX INT CO LTD2 citations63
US7518924B2Apr 14, 2009
NOR architecture memory and operation method thereof
MACRONIX INT CO LTD3 citations63
US7471561B2Dec 30, 2008
Method for preventing memory from generating leakage current and memory thereof
MACRONIX INT CO LTD4 citations63
US7463539B2Dec 9, 2008
Method for burst mode, bit line charge transfer and memory using the same
MACRONIX INT CO LTD5 citations63
US7330020B1Feb 12, 2008
Voltage regulation unit with zener diode and voltage regulation device thereof
MACRONIX INT CO LTD2 citations63
US7218563B1May 15, 2007
Method and apparatus for reading data from nonvolatile memory
MACRONIX INT CO LTD5 citations63
US11631441B2Apr 18, 2023
Method and system for enhanced multi-address read operations in low pin count interfaces
MACRONIX INT CO LTD0 citations62
US7961513B2Jun 14, 2011
Method for programming a multilevel memory
MACRONIX INT CO LTD4 citations62
US7580292B2Aug 25, 2009
Method for programming a multilevel memory
MACRONIX INT CO LTD4 citations62
US12198752B2Jan 14, 2025
High density memory with reference memory using grouped cells and corresponding operations
MACRONIX INT CO LTD0 citations61
US11049557B2Jun 29, 2021
Leakage current compensation in crossbar array
MACRONIX INT CO LTD1 citations60
US9170601B2Oct 27, 2015
Command decoding method and circuit of the same
MACRONIX INT CO LTD0 citations52
US8659327B2Feb 25, 2014
High voltage sustainable output buffer
MACRONIX INT CO LTD1 citations52
US8045396B2Oct 25, 2011
Memory and reading method thereof
MACRONIX INT CO LTD0 citations52
US8040734B2Oct 18, 2011
Current-mode sense amplifying method
MACRONIX INT CO LTD0 citations52
US7852699B2Dec 14, 2010
Power saving method and circuit thereof for a semiconductor memory
MACRONIX INT CO LTD0 citations52
US7791372B2Sep 7, 2010
Level shifter and level shifting method thereof
MACRONIX INT CO LTD0 citations52
US7787298B2Aug 31, 2010
Method for preventing memory from generating leakage current and memory thereof
MACRONIX INT CO LTD1 citations52
US7468600B2Dec 23, 2008
Voltage regulation unit with Zener diode and voltage regulation device thereof
MACRONIX INT CO LTD1 citations52
US6618848B2Sep 9, 2003
Method for designing circuit layout of non-neighboring metal bit lines to reduce coupling effect
MACRONIX INT CO LTD0 citations52
LIN YUNG-FENG
8 patentsUS8263886B2Sep 11, 2012
Key mechanism with waterproofing function and related electronic device
LIN YUNG-FENG134 citations97
US8693260B2Apr 8, 2014
Memory array with two-phase bit line precharge
LIN YUNG-FENG4 citations73
US8264900B2Sep 11, 2012
Data sensing arrangement using first and second bit lines
LIN YUNG-FENG3 citations63
US8453006B2May 28, 2013
Command decoding method and circuit of the same
LIN YUNG-FENG4 citations62
US8624981B2Jan 7, 2014
Testing method for camera
LIN YUNG-FENG1 citations52
US8446182B2May 21, 2013
TX output combining method between different bands
LIN YUNG-FENG0 citations52
US8174924B2May 8, 2012
Power saving method and circuit thereof for a semiconductor memory
LIN YUNG-FENG0 citations52
US8174289B2May 8, 2012
Level shifter and level shifting method thereof
LIN YUNG-FENG0 citations52
LIN YUNG FENG
4 patentsUS8085611B2Dec 27, 2011
Twisted data lines to avoid over-erase cell result coupling to normal cell result
LIN YUNG FENG9 citations84
US8085086B1Dec 27, 2011
Non-volatile memory device and charge pump circuit for the same
LIN YUNG FENG5 citations73
US9214859B2Dec 15, 2015
Charge pump system
LIN YUNG FENG3 citations58
US8264274B2Sep 11, 2012
Non-volatile memory device and charge pump circuit for the same
LIN YUNG FENG0 citations52
CHEN ZHEN
2 patentsLIN CHIA-HSIEN
1 patentUNITED MICROELECTRONICS CORP
1 patentShowing the top 50 of 60 patents by PatentIndex Score.