P

Inventor

SONG WON-SANG

KR13 patents
⚠️ This page may combine multiple inventors who share the name “SONG WON-SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

12 patents
US6842028B2Jan 11, 2005

Apparatus for testing reliability of interconnection in integrated circuit

SAMSUNG ELECTRONICS CO LTD21 citations92
US6511888B1Jan 28, 2003

Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step

SAMSUNG ELECTRONICS CO LTD21 citations92
US6580134B1Jun 17, 2003

Field effect transistors having elevated source/drain regions

SAMSUNG ELECTRONICS CO LTD22 citations91
US7205666B2Apr 17, 2007

Interconnections having double capping layer and method for forming the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US6693446B2Feb 17, 2004

Apparatus for testing reliability of interconnection in integrated circuit

SAMSUNG ELECTRONICS CO LTD18 citations83
US6645866B2Nov 11, 2003

Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step

SAMSUNG ELECTRONICS CO LTD11 citations74
US7605472B2Oct 20, 2009

Interconnections having double capping layer and method for forming the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US6881630B2Apr 19, 2005

Methods for fabricating field effect transistors having elevated source/drain regions

SAMSUNG ELECTRONICS CO LTD9 citations72
US6451691B2Sep 17, 2002

Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the pattern

SAMSUNG ELECTRONICS CO LTD7 citations72
US6740587B2May 25, 2004

Semiconductor device having a metal silicide layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations62
US6690187B2Feb 10, 2004

Apparatus for testing reliability of interconnection in integrated circuit

SAMSUNG ELECTRONICS CO LTD4 citations62
US7951712B2May 31, 2011

Interconnections having double capping layer and method for forming the same

SAMSUNG ELECTRONICS CO LTD0 citations52

SAMSUNG ELECRTONICS CO LTD

1 patent