Inventor
YANG JEONG-HWAN
KR33 patents
⚠️ This page may combine multiple inventors who share the name “YANG JEONG-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS7550332B2Jun 23, 2009
Non-planar transistor having germanium channel region and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD64 citations98
US6806157B2Oct 19, 2004
Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD19 citations92
US6653699B1Nov 25, 2003
Polysilicon/Amorphous silicon gate structures for integrated circuit field effect transistors
SAMSUNG ELECTRONICS CO LTD31 citations92
US6548877B2Apr 15, 2003
Metal oxide semiconductor field effect transistor for reducing resistance between source and drain
SAMSUNG ELECTRONICS CO LTD27 citations92
US6159810ADec 12, 2000
Methods of fabricating gates for integrated circuit field effect transistors including amorphous impurity layers
SAMSUNG ELECTRONICS CO LTD43 citations92
US7545002B2Jun 9, 2009
Low noise and high performance LSI device, layout and manufacturing method
SAMSUNG ELECTRONICS CO LTD14 citations84
US7339213B2Mar 4, 2008
Semiconductor device having a triple gate transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US7456723B2Nov 25, 2008
Inductors having input/output paths on opposing sides
SAMSUNG ELECTRONICS CO LTD6 citations74
US7227175B2Jun 5, 2007
Semiconductor device with different lattice properties
SAMSUNG ELECTRONICS CO LTD5 citations74
US7151019B2Dec 19, 2006
Method of manufacturing a semiconductor device with different lattice properties
SAMSUNG ELECTRONICS CO LTD5 citations74
US9093306B2Jul 28, 2015
Low noise and high performance LSI device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7964454B2Jun 21, 2011
Low noise and high performance LSI device, layout and manufacturing method
SAMSUNG ELECTRONICS CO LTD2 citations63
US7956420B2Jun 7, 2011
Low noise and high performance LSI device, layout and manufacturing method
SAMSUNG ELECTRONICS CO LTD2 citations63
US7391292B2Jun 24, 2008
Inductors having interconnect and inductor portions to provide combined magnetic fields
SAMSUNG ELECTRONICS CO LTD3 citations63
US7320920B2Jan 22, 2008
Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations63
US7129517B2Oct 31, 2006
Semiconductor device with different lattice properties
SAMSUNG ELECTRONICS CO LTD3 citations63
US6740587B2May 25, 2004
Semiconductor device having a metal silicide layer and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US9899386B2Feb 20, 2018
Low noise and high performance LSI device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9425182B2Aug 23, 2016
Low noise and high performance LSI device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7932154B2Apr 26, 2011
Method of fabricating non-volatile flash memory device having at least two different channel concentrations
SAMSUNG ELECTRONICS CO LTD0 citations52
US7288810B2Oct 30, 2007
Nonvolatile semiconductor memory device having double floating gate structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
MAEDA SHIGENOBU
4 patentsUS8816440B2Aug 26, 2014
Low noise and high performance LSI device
MAEDA SHIGENOBU6 citations84
US8159006B2Apr 17, 2012
Semiconductor device having a triple gate transistor and method for manufacturing the same
MAEDA SHIGENOBU2 citations60
US9123811B2Sep 1, 2015
Semiconductor device having a triple gate transistor and method for manufacturing the same
MAEDA SHIGENOBU0 citations50
US8710555B2Apr 29, 2014
Semiconductor device having a triple gate transistor and method for manufacturing the same
MAEDA SHIGENOBU0 citations50