Inventor
YOON BYOUNG-MOON
KR23 patents
⚠️ This page may combine multiple inventors who share the name “YOON BYOUNG-MOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS7445997B2Nov 4, 2008
Methods of forming non-volatile memory devices having floating gate electrodes
SAMSUNG ELECTRONICS CO LTD10 citations84
US7151043B2Dec 19, 2006
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations84
US8039372B2Oct 18, 2011
Methods of manufacturing variable resistance non-volatile memory devices including a uniformly narrow contact layer
SAMSUNG ELECTRONICS CO LTD10 citations83
US6843257B2Jan 18, 2005
Wafer cleaning system
SAMSUNG ELECTRONICS CO LTD16 citations83
US6489201B2Dec 3, 2002
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD17 citations83
US9530670B2Dec 27, 2016
Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant
SAMSUNG ELECTRONICS CO LTD8 citations81
US6117350ASep 12, 2000
Adjustable selectivity etching solutions and methods of etching semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD9 citations74
US7781346B2Aug 24, 2010
Methods of forming patterns and capacitors for semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD2 citations63
US7338610B2Mar 4, 2008
Etching method for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations63
US7089947B2Aug 15, 2006
Apparatus and method for cleaning a semiconductor wafer
SAMSUNG ELECTRONICS CO LTD2 citations62
US7017597B2Mar 28, 2006
Megasonic cleaning apparatus for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations62
US6740587B2May 25, 2004
Semiconductor device having a metal silicide layer and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations62
US6831012B2Dec 14, 2004
Method for forming a silicide film of a semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations61
US8033401B2Oct 11, 2011
Wafer guide for preventing wafer breakage in semiconductor cleaning apparatus
SAMSUNG ELECTRONICS CO LTD5 citations55
US7579284B2Aug 25, 2009
Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7105474B2Sep 12, 2006
Organic stripping composition and method of etching oxide using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7582559B2Sep 1, 2009
Method of manufacturing a semiconductor device having voids in a polysilicon layer
SAMSUNG ELECTRONICS CO LTD1 citations51
US6946431B2Sep 20, 2005
Cleaning solution including aqueous ammonia solution, acetic acid and deionized water for integrated circuit devices and methods of cleaning integrated circuit devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US6562727B2May 13, 2003
Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and water
SAMSUNG ELECTRONICS CO LTD0 citations50