P

Inventor

YOON BYOUNG-MOON

KR23 patents
⚠️ This page may combine multiple inventors who share the name “YOON BYOUNG-MOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US7445997B2Nov 4, 2008

Methods of forming non-volatile memory devices having floating gate electrodes

SAMSUNG ELECTRONICS CO LTD10 citations84
US7151043B2Dec 19, 2006

Method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations84
US8039372B2Oct 18, 2011

Methods of manufacturing variable resistance non-volatile memory devices including a uniformly narrow contact layer

SAMSUNG ELECTRONICS CO LTD10 citations83
US6843257B2Jan 18, 2005

Wafer cleaning system

SAMSUNG ELECTRONICS CO LTD16 citations83
US6489201B2Dec 3, 2002

Method for manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD17 citations83
US9530670B2Dec 27, 2016

Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant

SAMSUNG ELECTRONICS CO LTD8 citations81
US6117350ASep 12, 2000

Adjustable selectivity etching solutions and methods of etching semiconductor devices using the same

SAMSUNG ELECTRONICS CO LTD9 citations74
US7781346B2Aug 24, 2010

Methods of forming patterns and capacitors for semiconductor devices using the same

SAMSUNG ELECTRONICS CO LTD2 citations63
US7338610B2Mar 4, 2008

Etching method for manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations63
US7089947B2Aug 15, 2006

Apparatus and method for cleaning a semiconductor wafer

SAMSUNG ELECTRONICS CO LTD2 citations62
US7017597B2Mar 28, 2006

Megasonic cleaning apparatus for fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations62
US6740587B2May 25, 2004

Semiconductor device having a metal silicide layer and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations62
US6831012B2Dec 14, 2004

Method for forming a silicide film of a semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations61
US8033401B2Oct 11, 2011

Wafer guide for preventing wafer breakage in semiconductor cleaning apparatus

SAMSUNG ELECTRONICS CO LTD5 citations55
US7579284B2Aug 25, 2009

Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7105474B2Sep 12, 2006

Organic stripping composition and method of etching oxide using the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7582559B2Sep 1, 2009

Method of manufacturing a semiconductor device having voids in a polysilicon layer

SAMSUNG ELECTRONICS CO LTD1 citations51
US6946431B2Sep 20, 2005

Cleaning solution including aqueous ammonia solution, acetic acid and deionized water for integrated circuit devices and methods of cleaning integrated circuit devices using the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US6562727B2May 13, 2003

Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and water

SAMSUNG ELECTRONICS CO LTD0 citations50

KIM HYO-JUNG

2 patents

YANG JUN-YOUL

1 patent

KO KI-HYUNG

1 patent