Inventor

HORNG CHENG T

US128 patents

⚠️ This page may combine multiple inventors who share the name “HORNG CHENG T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HORNG CHENG T

HEADWAY TECHNOLOGIES INC

Capping structure for enhancing dR/R of the MTJ device

Free layer for CPP GMR having iron rich NiFe

Process of manufacturing a seed/AFM combination for a CPP GMR device

FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures

FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures

Bottom electrode for making a magnetic tunneling junction (MTJ)

Bottom spin valves with continuous spacer exchange (or hard) bias

Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

Shield structure design to improve the stability of an MR head

Structure/method to form bottom spin valves for ultra-high density

Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication

GMR configuration with enhanced spin filtering

Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor

Robust hard bias/conductor lead structures for future GMR heads

Method for forming a bottom spin valve magnetoresistive sensor element

Single top spin valve heads for ultra-high recording density

Spin filter bottom spin valve head with continuous spacer exchange bias

Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration

Method of fabrication of striped magnetoresistive (SMR) and dual stripe magnetoresistive (DSMR) heads with anti-parallel exchange configuration

MAGIC TECHNOLOGIES INC

High performance MTJ element for STT-RAM and method for making the same

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

Low switching current MTJ element for ultra-high STT-RAM and a method for making the same

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

Spin transfer MRAM device with novel magnetic free layer

Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

Hafnium doped cap and free layer for MRAM device

Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R

MgO/NiFe MTJ for high performance MRAM application

IBM

Method for making a thin film magnetic head having a protective coating

Thin film magnetic head having a protective coating and method for making same

Magnetic head slider having a protective coating thereon

Self-aligned process for providing an improved high performance bipolar transistor

Process for making large area isolation trenches utilizing a two-step selective etching technique

Polysilicon-base self-aligned bipolar transistor process

Method of forming wide, deep dielectric filled isolation trenches in the surface of a silicon semiconductor substrate

HORNG CHENG T

Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM

High performance MTJ element for STT-RAM and method for making the same

Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current

Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same

APPLIED SPINTRONICS INC

Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM

Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head

Structure and method to fabricate high performance MTJ devices for MRAM applications

Structure and method to fabricate high performance MTJ devices for MRAM applications

Structure/method to fabricate a high performance magnetic tunneling junction MRAM

ZHANG KUNLIANG

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application

HEADWAY TECH INC

Magnetic tunnel junction for MRAM applications