Inventor

TONG RU-YING

US189 patents

⚠️ This page may combine multiple inventors who share the name “TONG RU-YING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TONG RU-YING

HEADWAY TECHNOLOGIES INC

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Capping structure for enhancing dR/R of the MTJ device

Free layer for CPP GMR having iron rich NiFe

Process of manufacturing a seed/AFM combination for a CPP GMR device

Bottom electrode for making a magnetic tunneling junction (MTJ)

Bottom spin valves with continuous spacer exchange (or hard) bias

Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient

Process and structure to fabricate CPP spin valve heads for ultra-high recording density

Mg discontinuous insertion layer for improving MTJ shunt

Co/X and CoX multilayers with improved out-of-plane anisotropy for magnetic device applications

Structure/method to form bottom spin valves for ultra-high density

Method for fabricating lead overlay (LOL) on the bottom spin valve GMR read sensor

Robust hard bias/conductor lead structures for future GMR heads

Single top spin valve heads for ultra-high recording density

Spin filter bottom spin valve head with continuous spacer exchange bias

Hybridized oxide capping layer for perpendicular magnetic anisotropy

MAGIC TECHNOLOGIES INC

High performance MTJ element for STT-RAM and method for making the same

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

Low switching current MTJ element for ultra-high STT-RAM and a method for making the same

Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same

Spin transfer MRAM device with novel magnetic free layer

Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

Hafnium doped cap and free layer for MRAM device

Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R

MgO/NiFe MTJ for high performance MRAM application

HORNG CHENG T

Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer

Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM

High performance MTJ element for STT-RAM and method for making the same

Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current

Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same

HEADWAY TECH INC

Seed layer for multilayer magnetic materials

Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy

MgO insertion into free layer for magnetic memory applications

High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

APPLIED SPINTRONICS INC

Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM

Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head

Structure and method to fabricate high performance MTJ devices for MRAM applications

Structure and method to fabricate high performance MTJ devices for MRAM applications

Structure/method to fabricate a high performance magnetic tunneling junction MRAM

JAN GUENOLE

Magnetic element with improved out-of-plane anisotropy for spintronic applications

Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

WANG YU-JEN

Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications

BEACH ROBERT

Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM

ZHANG KUNLIANG

MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application