P

Inventor

OKAMURA MASAHIRO

JP33 patents
⚠️ This page may combine multiple inventors who share the name “OKAMURA MASAHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

19 patents
US4745088AMay 17, 1988

Vapor phase growth on semiconductor wafers

HITACHI LTD213 citations98
US4649990AMar 17, 1987

Heat-conducting cooling module

HITACHI LTD75 citations96
US4514747AApr 30, 1985

Field controlled thyristor with double-diffused source region

HITACHI LTD32 citations92
US4223328ASep 16, 1980

Field controlled thyristor with dual resistivity field layer

HITACHI LTD42 citations92
US4083062AApr 4, 1978

Avalanche photodiode with reduced avalanche breakdown voltage

HITACHI LTD35 citations89
US4388635AJun 14, 1983

High breakdown voltage semiconductor device

HITACHI LTD19 citations82
US4016593AApr 5, 1977

Bidirectional photothyristor device

HITACHI LTD28 citations82
US4079405AMar 14, 1978

Semiconductor photodetector

HITACHI LTD26 citations79
US4354121AOct 12, 1982

Field controlled thyristor control circuit with additional FCT in reverse bias circuit

HITACHI LTD10 citations74
US4216487AAug 5, 1980

Bidirectional light-activated thyristor having substrate optical isolation

HITACHI LTD12 citations74
US4110781AAug 29, 1978

Bidirectional grooved thyristor fired by activation of the beveled surfaces

HITACHI LTD13 citations74
US4040084AAug 2, 1977

Semiconductor device having high blocking voltage with peripheral circular groove

HITACHI LTD16 citations74
US4491562AJan 1, 1985

Thermal fatigue resistant low-melting point solder alloys

HITACHI LTD8 citations72
US4210464AJul 1, 1980

Method of simultaneously controlling the lifetimes and leakage currents in semiconductor devices by hot electron irradiation through passivating glass layers

HITACHI LTD14 citations72
US4201598AMay 6, 1980

Electron irradiation process of glass passivated semiconductor devices for improved reverse characteristics

HITACHI LTD14 citations72
US3968019AJul 6, 1976

Method of manufacturing low power loss semiconductor device

HITACHI LTD11 citations71
US4682199AJul 21, 1987

High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer

HITACHI LTD6 citations63
US4258377AMar 24, 1981

Lateral field controlled thyristor

HITACHI LTD4 citations63
US3943550AMar 9, 1976

Light-activated semiconductor-controlled rectifier

HITACHI LTD2 citations63

PIONEER CORP

7 patents

PIONEER ELECTRONIC CORP

2 patents

PIONEER ELECTRIC CORP

1 patent

SHARP KK

1 patent

RIKEN

1 patent

IDEMITSU PETROCHEMICAL CO

1 patent

OKAMURA MASAHIRO

1 patent