Inventor
ZHENG JUN-FEI
US34 patents
⚠️ This page may combine multiple inventors who share the name “ZHENG JUN-FEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
23 patentsUS6373111B1Apr 16, 2002
Work function tuning for MOSFET gate electrodes
INTEL CORP181 citations99
US6696333B1Feb 24, 2004
Method of making integrated circuit with MOSFETs having bi-layer metal gate electrodes
INTEL CORP46 citations96
US7359591B2Apr 15, 2008
Electrical/optical integration scheme using direct copper bonding
INTEL CORP24 citations92
US6879009B2Apr 12, 2005
Integrated circuit with MOSFETS having bi-layer metal gate electrodes
INTEL CORP27 citations92
US6819839B2Nov 16, 2004
Tapered waveguide photodetector apparatus and methods
INTEL CORP24 citations92
US6794232B2Sep 21, 2004
Method of making MOSFET gate electrodes with tuned work function
INTEL CORP29 citations92
US6790731B2Sep 14, 2004
Method for tuning a work function for MOSFET gate electrodes
INTEL CORP21 citations92
US6734443B2May 11, 2004
Apparatus and method for removing photomask contamination and controlling electrostatic discharge
INTEL CORP23 citations92
US7212026B2May 1, 2007
Spin-orbital quantum cellular automata logic devices and systems
INTEL CORP15 citations84
US7826694B2Nov 2, 2010
Electrical/optical integration scheme using direct copper bonding
INTEL CORP7 citations74
US7146074B2Dec 5, 2006
Optical grating coupler
INTEL CORP8 citations73
US7065271B2Jun 20, 2006
Optical grating coupler
INTEL CORP10 citations73
US7615428B2Nov 10, 2009
Vertical memory device and method
INTEL CORP1 citations63
US7312490B2Dec 25, 2007
Vertical memory device and method
INTEL CORP2 citations63
US7715676B2May 11, 2010
Optical grating coupler
INTEL CORP1 citations62
US7006734B2Feb 28, 2006
Optical waveguide Y-branch splitter
INTEL CORP5 citations62
US6846740B2Jan 25, 2005
Wafer-level quasi-planarization and passivation for multi-height structures
INTEL CORP5 citations61
US6806204B1Oct 19, 2004
Semiconductor etch speed modification
INTEL CORP5 citations58
US7834426B2Nov 16, 2010
High-k dual dielectric stack
INTEL CORP1 citations52
US7663172B2Feb 16, 2010
Vertical memory device and method
INTEL CORP0 citations52
US7560739B2Jul 14, 2009
Micro or below scale multi-layered heterostructure
INTEL CORP0 citations52
US6876794B2Apr 5, 2005
Multi-waveguide layer H-tree distribution device
INTEL CORP1 citations52
US6537706B1Mar 25, 2003
Method for making a photolithographic mask
INTEL CORP1 citations52
ZHENG JUN-FEI
6 patentsUS8330136B2Dec 11, 2012
High concentration nitrogen-containing germanium telluride based memory devices and processes of making
ZHENG JUN-FEI9 citations84
US9190609B2Nov 17, 2015
Germanium antimony telluride materials and devices incorporating same
ZHENG JUN-FEI6 citations83
US8617972B2Dec 31, 2013
Low temperature GST process
ZHENG JUN-FEI6 citations83
US8410468B2Apr 2, 2013
Hollow GST structure with dielectric fill
ZHENG JUN-FEI15 citations83
US9012876B2Apr 21, 2015
Germanium antimony telluride materials and devices incorporating same
ZHENG JUN-FEI5 citations72
US8178952B2May 15, 2012
Method of forming high-k dual dielectric stack
ZHENG JUN-FEI0 citations51
ENTEGRIS INC
3 patentsUS9640757B2May 2, 2017
Double self-aligned phase change memory device structure
ENTEGRIS INC8 citations84
US12078921B2Sep 3, 2024
Phase-shift reticle for use in photolithography
ENTEGRIS INC0 citations58
US9385310B2Jul 5, 2016
Phase change memory structure comprising phase change alloy center-filled with dielectric material
ENTEGRIS INC1 citations52