Inventor

TERASHIMA TOMOHIDE

JP87 patents

⚠️ This page may combine multiple inventors who share the name “TERASHIMA TOMOHIDE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TERASHIMA TOMOHIDE

MITSUBISHI ELECTRIC CORP

Semiconductor device for supplying output voltage according to high power supply voltage

Semiconductor device and process for the same

Semiconductor device having a high breakdown voltage isolation region

Semiconductor device with high breakdown voltage island region

Semiconductor device having element with high breakdown voltage

Dielectric element isolated semiconductor device and a method of manufacturing the same

VDMOS semiconductor device

Semiconductor device with increased breakdown voltage

Dielectric element isolated semiconductor device and a method of manufacturing the same

High breakdown voltage type semiconductor device

Method of fabricating an insulated gate bipolar transistor

Method of fabricating a semiconductor device

Method of forming a semiconductor device which prevents field concentration

Structure for preventing field concentration in semiconductor device and method of forming the same

Semiconductor device having high breakdown voltage and low resistance and method of fabricating the same

Semiconductor device and method of manufacturing the same

Semiconductor device with DMOS and bi-polar transistors

Semiconductor device containing a diode

Semiconductor device which moderates electric field concentration caused by a conductive film formed on a surface thereof

High voltage breakdown isolation semiconductor device and manufacturing process for making the device

Semiconductor device

Semiconductor device

Insulated gate bipolar transistor

Thyristor device with improved turn-off characteristics

A semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same

Semiconductor device with structure for improving breakdown voltage

Semiconductor circuit

Field MOS transistor and semiconductor integrated circuit including the same

Semiconductor device and method of manufacturing the same

Semiconductor device having element with high breakdown voltage

Semiconductor device including a lateral power device

Semiconductor device having a Bi-CMOS transistor including an n-channel MOS transistor

Method of manufacturing a semiconductor device with increased breakdown voltage

Semiconductor device having voltage sensing element

Semiconductor memory device and a method of using the same

Semiconductor device with high off-breakdown-voltage and low on resistance

Structure for preventing electric field concentration in semiconductor device

Thyristor and method of manufacturing the same

Thyristor with first and second independent control electrodes

Semiconductor device and fabrication method thereof

Semiconductor device

Method of manufacturing a semiconductor device including a fuse

Method of manufacturing a semiconductor device for extracting a signal used to monitor potential of a high voltage island

Semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device with a high breakdown voltage device

Structure of a high breakdown voltage element for use in high power application

TERASHIMA TOMOHIDE

Semiconductor device supplying charging current to element to be charged

YAMASHITA JUNICHI

Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region