Inventor
BRAITHWAITE GLYN
US16 patents
⚠️ This page may combine multiple inventors who share the name “BRAITHWAITE GLYN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
7 patentsUS8629477B2Jan 14, 2014
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG35 citations98
US7709828B2May 4, 2010
RF circuits including transistors having strained material layers
TAIWAN SEMICONDUCTOR MFG138 citations98
US8796734B2Aug 5, 2014
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG16 citations92
US8519436B2Aug 27, 2013
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG17 citations92
US9219112B2Dec 22, 2015
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG3 citations74
US8987028B2Mar 24, 2015
Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
TAIWAN SEMICONDUCTOR MFG3 citations74
US7906776B2Mar 15, 2011
RF circuits including transistors having strained material layers
TAIWAN SEMICONDUCTOR MFG2 citations62
AMBERWAVE SYSTEMS CORP
4 patentsUS7074623B2Jul 11, 2006
Methods of forming strained-semiconductor-on-insulator finFET device structures
AMBERWAVE SYSTEMS CORP226 citations99
US7109516B2Sep 19, 2006
Strained-semiconductor-on-insulator finFET device structures
AMBERWAVE SYSTEMS CORP100 citations98
US6933518B2Aug 23, 2005
RF circuits including transistors having strained material layers
AMBERWAVE SYSTEMS CORP20 citations92
US6680496B1Jan 20, 2004
Back-biasing to populate strained layer quantum wells
AMBERWAVE SYSTEMS CORP29 citations92