Inventor
DERDERIAN GARO
US17 patents
⚠️ This page may combine multiple inventors who share the name “DERDERIAN GARO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
14 patentsUS7390710B2Jun 24, 2008
Protection of tunnel dielectric using epitaxial silicon
MICRON TECHNOLOGY INC85 citations98
US6596583B2Jul 22, 2003
Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
MICRON TECHNOLOGY INC96 citations97
US6784504B2Aug 31, 2004
Methods for forming rough ruthenium-containing layers and structures/methods using same
MICRON TECHNOLOGY INC43 citations96
US6429127B1Aug 6, 2002
Methods for forming rough ruthenium-containing layers and structures/methods using same
MICRON TECHNOLOGY INC45 citations96
US6124626ASep 26, 2000
Capacitor structures formed using excess oxygen containing material provided relative to electrodes thereof
MICRON TECHNOLOGY INC30 citations96
US6897160B2May 24, 2005
Methods for forming rough ruthenium-containing layers and structures/methods using same
MICRON TECHNOLOGY INC28 citations92
US6890814B2May 10, 2005
Methods for use in forming a capacitor and structures resulting from same
MICRON TECHNOLOGY INC26 citations92
US6833576B2Dec 21, 2004
Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
MICRON TECHNOLOGY INC20 citations92
US6696745B2Feb 24, 2004
Methods for use in forming a capacitor and structures resulting from same
MICRON TECHNOLOGY INC28 citations92
US6376327B2Apr 23, 2002
Structures formed using excess oxygen containing material
MICRON TECHNOLOGY INC18 citations92
US6200874B1Mar 13, 2001
Methods for use in forming a capacitor
MICRON TECHNOLOGY INC17 citations92
US7276414B2Oct 2, 2007
NAND memory arrays and methods
MICRON TECHNOLOGY INC3 citations63
US7144810B2Dec 5, 2006
Methods for forming rough ruthenium-containing layers and structures/methods using same
MICRON TECHNOLOGY INC3 citations63
US7898017B2Mar 1, 2011
Floating-gate memory cell and memory device and electronic system therewith
MICRON TECHNOLOGY INC0 citations52