Inventor
YANG SAM
US38 patents
⚠️ This page may combine multiple inventors who share the name “YANG SAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
25 patentsUS6670256B2Dec 30, 2003
Metal oxynitride capacitor barrier layer
MICRON TECHNOLOGY INC121 citations99
US6417537B1Jul 9, 2002
Metal oxynitride capacitor barrier layer
MICRON TECHNOLOGY INC117 citations99
US6596583B2Jul 22, 2003
Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
MICRON TECHNOLOGY INC96 citations97
US6746930B2Jun 8, 2004
Oxygen barrier for cell container process
MICRON TECHNOLOGY INC60 citations96
US6617248B1Sep 9, 2003
Method for forming a ruthenium metal layer
MICRON TECHNOLOGY INC51 citations96
US6524912B1Feb 25, 2003
Planarization of metal container structures
MICRON TECHNOLOGY INC58 citations96
US6727140B2Apr 27, 2004
Capacitor with high dielectric constant materials and method of making
MICRON TECHNOLOGY INC27 citations93
US7378719B2May 27, 2008
Low leakage MIM capacitor
MICRON TECHNOLOGY INC19 citations92
US7368343B2May 6, 2008
Low leakage MIM capacitor
MICRON TECHNOLOGY INC14 citations92
US7018675B2Mar 28, 2006
Method for forming a ruthenium metal layer
MICRON TECHNOLOGY INC14 citations92
US6833576B2Dec 21, 2004
Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
MICRON TECHNOLOGY INC20 citations92
US6664583B2Dec 16, 2003
Metal oxynitride capacitor barrier layer
MICRON TECHNOLOGY INC12 citations82
US6631069B2Oct 7, 2003
Metal oxynitride capacitor barrier layer
MICRON TECHNOLOGY INC12 citations82
US6664584B2Dec 16, 2003
Metal oxynitride capacitor barrier layer
MICRON TECHNOLOGY INC11 citations76
US7435641B2Oct 14, 2008
Low leakage MIM capacitor
MICRON TECHNOLOGY INC4 citations74
US7053462B2May 30, 2006
Planarization of metal container structures
MICRON TECHNOLOGY INC9 citations74
US7015527B2Mar 21, 2006
Metal oxynitride capacitor barrier layer
MICRON TECHNOLOGY INC7 citations74
US6803621B2Oct 12, 2004
Oxygen barrier for cell container process
MICRON TECHNOLOGY INC7 citations74
US6676756B1Jan 13, 2004
Technique for high efficiency metalorganic chemical vapor deposition
MICRON TECHNOLOGY INC6 citations74
US6576538B2Jun 10, 2003
Technique for high efficiency metalorganic chemical vapor deposition
MICRON TECHNOLOGY INC7 citations74
US7214618B2May 8, 2007
Technique for high efficiency metalorganic chemical vapor deposition
MICRON TECHNOLOGY INC2 citations63
US7192828B2Mar 20, 2007
Capacitor with high dielectric constant materials and method of making
MICRON TECHNOLOGY INC3 citations63
US7002202B2Feb 21, 2006
Metal oxynitride capacitor barrier layer
MICRON TECHNOLOGY INC1 citations63
US6921710B2Jul 26, 2005
Technique for high efficiency metalorganic chemical vapor deposition
MICRON TECHNOLOGY INC1 citations63
US6586796B2Jul 1, 2003
Capacitor with high dielectric constant materials
MICRON TECHNOLOGY INC1 citations63