Inventor
FREITAG JAMES MAC
US95 patents
⚠️ This page may combine multiple inventors who share the name “FREITAG JAMES MAC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI GLOBAL STORAGE TECH
26 patentsUS7602589B2Oct 13, 2009
Magnetoresistive sensor having shape enhanced pinning and low lead resistance
HITACHI GLOBAL STORAGE TECH20 citations93
US7580230B2Aug 25, 2009
Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges
HITACHI GLOBAL STORAGE TECH25 citations93
US7522391B2Apr 21, 2009
Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure
HITACHI GLOBAL STORAGE TECH32 citations93
US7466524B2Dec 16, 2008
Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
HITACHI GLOBAL STORAGE TECH20 citations93
US7369371B2May 6, 2008
Magnetoresistive sensor having a shape enhanced pinned layer
HITACHI GLOBAL STORAGE TECH28 citations93
US6785102B2Aug 31, 2004
Spin valve sensor with dual self-pinned AP pinned layer structures
HITACHI GLOBAL STORAGE TECH41 citations93
US6751072B2Jun 15, 2004
High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure
HITACHI GLOBAL STORAGE TECH18 citations93
US6744607B2Jun 1, 2004
Exchange biased self-pinned spin valve sensor with recessed overlaid leads
HITACHI GLOBAL STORAGE TECH21 citations92
US7663846B2Feb 16, 2010
Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning
HITACHI GLOBAL STORAGE TECH17 citations84
US7564659B2Jul 21, 2009
Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement
HITACHI GLOBAL STORAGE TECH16 citations84
US7420787B2Sep 2, 2008
Magnetoresistive sensor having a shape enhanced pinned layer
HITACHI GLOBAL STORAGE TECH17 citations84
US7280314B2Oct 9, 2007
Lower saturation field structure for perpendicular AFC pole
HITACHI GLOBAL STORAGE TECH17 citations84
US7268985B2Sep 11, 2007
Magnetic head having a layered hard bias layer exhibiting reduced noise
HITACHI GLOBAL STORAGE TECH14 citations84
US7177120B2Feb 13, 2007
Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer
HITACHI GLOBAL STORAGE TECH16 citations84
US7082017B2Jul 25, 2006
High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure
HITACHI GLOBAL STORAGE TECH14 citations84
US7676904B2Mar 16, 2010
Method of manufacturing high sensitivity spin valve designs with ion beam treatment
HITACHI GLOBAL STORAGE TECH12 citations82
US7111385B2Sep 26, 2006
Method for improving hard bias properties of layers in a magnetoresistive sensor
HITACHI GLOBAL STORAGE TECH12 citations82
US7038892B2May 2, 2006
Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer
HITACHI GLOBAL STORAGE TECH11 citations82
US7505235B2Mar 17, 2009
Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device
HITACHI GLOBAL STORAGE TECH6 citations74
US7502209B2Mar 10, 2009
Read sensors having nitrogenated hard bias layers and method of making the same
HITACHI GLOBAL STORAGE TECH7 citations74
US7362547B2Apr 22, 2008
Magnetic head having PtMn layer formed by ion beam deposition
HITACHI GLOBAL STORAGE TECH6 citations74
US7173796B2Feb 6, 2007
Spin valve with a capping layer comprising an oxidized cobalt layer and method of forming same
HITACHI GLOBAL STORAGE TECH8 citations74
US7145755B2Dec 5, 2006
Spin valve sensor having one of two AP pinned layers made of cobalt
HITACHI GLOBAL STORAGE TECH8 citations74
US7057863B2Jun 6, 2006
Anti-parallel tab sensor fabrication using chemical-mechanical polishing process
HITACHI GLOBAL STORAGE TECH6 citations74
US7019949B2Mar 28, 2006
Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
HITACHI GLOBAL STORAGE TECH8 citations74
US6954344B2Oct 11, 2005
Anti-parallel tab sensor fabrication using chemical-mechanical polishing process
HITACHI GLOBAL STORAGE TECH5 citations74
WESTERN DIGITAL TECH INC
14 patentsUS10762917B1Sep 1, 2020
Reversed mode spin torque oscillator with shaped field generation layer
WESTERN DIGITAL TECH INC20 citations94
US11289118B1Mar 29, 2022
Spintronic device having negative interface spin scattering
WESTERN DIGITAL TECH INC11 citations86
US10943611B1Mar 9, 2021
Spintronic devices with narrow spin polarization layers
WESTERN DIGITAL TECH INC14 citations86
US10643643B1May 5, 2020
Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layer
WESTERN DIGITAL TECH INC12 citations86
US10867625B1Dec 15, 2020
Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layers
WESTERN DIGITAL TECH INC16 citations85
US11257514B2Feb 22, 2022
Magnetic recording devices having negative polarization layer to enhance spin-transfer torque
WESTERN DIGITAL TECH INC5 citations84
US10997993B1May 4, 2021
Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head
WESTERN DIGITAL TECH INC5 citations84
US10950260B1Mar 16, 2021
Magnetoresistive sensor with improved magnetic properties and magnetostriction control
WESTERN DIGITAL TECH INC7 citations84
US10839833B1Nov 17, 2020
Spin transfer torque device with oxide layer beneath the seed layer
WESTERN DIGITAL TECH INC7 citations84
US11127420B1Sep 21, 2021
Seed layer for spin torque oscillator in microwave assisted magnetic recording device
WESTERN DIGITAL TECH INC8 citations83
US10566015B2Feb 18, 2020
Spin transfer torque (STT) device with template layer for heusler alloy magnetic layers
WESTERN DIGITAL TECH INC8 citations81
US11283006B1Mar 22, 2022
Methods and apparatus of high moment free layers for magnetic tunnel junctions
WESTERN DIGITAL TECH INC6 citations75
US12040114B2Jul 16, 2024
Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture
WESTERN DIGITAL TECH INC2 citations73
US11211083B1Dec 28, 2021
MAMR head with synthetic antiferromagnetic (SAF) coupled notch
WESTERN DIGITAL TECH INC2 citations73
HGST Netherlands BV
5 patentsUS9099124B1Aug 4, 2015
Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion
HGST Netherlands BV30 citations94
US9734850B1Aug 15, 2017
Magnetic tunnel junction (MTJ) free layer damping reduction
HGST Netherlands BV9 citations84
US9030785B2May 12, 2015
Narrow read-gap head with recessed afm
HGST Netherlands BV11 citations84
US9001473B1Apr 7, 2015
TMR/CPP reader for narrow reader gap application
HGST Netherlands BV17 citations84
US8958180B1Feb 17, 2015
Capping materials for magnetic read head sensor
HGST Netherlands BV10 citations84
IBM
3 patentsUS6636400B2Oct 21, 2003
Magnetoresistive head having improved hard biasing characteristics through the use of a multi-layered seed layer including an oxidized tantalum layer and a chromium layer
IBM39 citations93
US6624985B1Sep 23, 2003
Pinning layer seeds for CPP geometry spin valve sensors
IBM37 citations93
US7038889B2May 2, 2006
Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer
IBM17 citations84
HITACHI GLOBAL STORAGE TECH NL
1 patentFREITAG JAMES MAC
1 patentShowing the top 50 of 95 patents by PatentIndex Score.