P

Inventor

FREITAG JAMES MAC

US95 patents
⚠️ This page may combine multiple inventors who share the name “FREITAG JAMES MAC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI GLOBAL STORAGE TECH

26 patents
US7602589B2Oct 13, 2009

Magnetoresistive sensor having shape enhanced pinning and low lead resistance

HITACHI GLOBAL STORAGE TECH20 citations93
US7580230B2Aug 25, 2009

Magnetoresistive sensor having shape enhanced pinning, a flux guide structure and damage free virtual edges

HITACHI GLOBAL STORAGE TECH25 citations93
US7522391B2Apr 21, 2009

Current perpendicular to plane magnetoresistive sensor having a shape enhanced pinned layer and an in stack bias structure

HITACHI GLOBAL STORAGE TECH32 citations93
US7466524B2Dec 16, 2008

Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip

HITACHI GLOBAL STORAGE TECH20 citations93
US7369371B2May 6, 2008

Magnetoresistive sensor having a shape enhanced pinned layer

HITACHI GLOBAL STORAGE TECH28 citations93
US6785102B2Aug 31, 2004

Spin valve sensor with dual self-pinned AP pinned layer structures

HITACHI GLOBAL STORAGE TECH41 citations93
US6751072B2Jun 15, 2004

High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure

HITACHI GLOBAL STORAGE TECH18 citations93
US6744607B2Jun 1, 2004

Exchange biased self-pinned spin valve sensor with recessed overlaid leads

HITACHI GLOBAL STORAGE TECH21 citations92
US7663846B2Feb 16, 2010

Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning

HITACHI GLOBAL STORAGE TECH17 citations84
US7564659B2Jul 21, 2009

Magnetoresistive sensor having an anisotropic pinned layer for pinning improvement

HITACHI GLOBAL STORAGE TECH16 citations84
US7420787B2Sep 2, 2008

Magnetoresistive sensor having a shape enhanced pinned layer

HITACHI GLOBAL STORAGE TECH17 citations84
US7280314B2Oct 9, 2007

Lower saturation field structure for perpendicular AFC pole

HITACHI GLOBAL STORAGE TECH17 citations84
US7268985B2Sep 11, 2007

Magnetic head having a layered hard bias layer exhibiting reduced noise

HITACHI GLOBAL STORAGE TECH14 citations84
US7177120B2Feb 13, 2007

Self-pinned spin valve sensor with a high coercivity antiparallel (AP) pinned layer

HITACHI GLOBAL STORAGE TECH16 citations84
US7082017B2Jul 25, 2006

High magnetoresistance spin valve sensor with self-pinned antiparallel (AP) pinned layer structure

HITACHI GLOBAL STORAGE TECH14 citations84
US7676904B2Mar 16, 2010

Method of manufacturing high sensitivity spin valve designs with ion beam treatment

HITACHI GLOBAL STORAGE TECH12 citations82
US7111385B2Sep 26, 2006

Method for improving hard bias properties of layers in a magnetoresistive sensor

HITACHI GLOBAL STORAGE TECH12 citations82
US7038892B2May 2, 2006

Apparatus having a hard bias seedlayer structure for providing improved properties of a hard bias layer

HITACHI GLOBAL STORAGE TECH11 citations82
US7505235B2Mar 17, 2009

Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device

HITACHI GLOBAL STORAGE TECH6 citations74
US7502209B2Mar 10, 2009

Read sensors having nitrogenated hard bias layers and method of making the same

HITACHI GLOBAL STORAGE TECH7 citations74
US7362547B2Apr 22, 2008

Magnetic head having PtMn layer formed by ion beam deposition

HITACHI GLOBAL STORAGE TECH6 citations74
US7173796B2Feb 6, 2007

Spin valve with a capping layer comprising an oxidized cobalt layer and method of forming same

HITACHI GLOBAL STORAGE TECH8 citations74
US7145755B2Dec 5, 2006

Spin valve sensor having one of two AP pinned layers made of cobalt

HITACHI GLOBAL STORAGE TECH8 citations74
US7057863B2Jun 6, 2006

Anti-parallel tab sensor fabrication using chemical-mechanical polishing process

HITACHI GLOBAL STORAGE TECH6 citations74
US7019949B2Mar 28, 2006

Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip

HITACHI GLOBAL STORAGE TECH8 citations74
US6954344B2Oct 11, 2005

Anti-parallel tab sensor fabrication using chemical-mechanical polishing process

HITACHI GLOBAL STORAGE TECH5 citations74

WESTERN DIGITAL TECH INC

14 patents
US10762917B1Sep 1, 2020

Reversed mode spin torque oscillator with shaped field generation layer

WESTERN DIGITAL TECH INC20 citations94
US11289118B1Mar 29, 2022

Spintronic device having negative interface spin scattering

WESTERN DIGITAL TECH INC11 citations86
US10943611B1Mar 9, 2021

Spintronic devices with narrow spin polarization layers

WESTERN DIGITAL TECH INC14 citations86
US10643643B1May 5, 2020

Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layer

WESTERN DIGITAL TECH INC12 citations86
US10867625B1Dec 15, 2020

Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layers

WESTERN DIGITAL TECH INC16 citations85
US11257514B2Feb 22, 2022

Magnetic recording devices having negative polarization layer to enhance spin-transfer torque

WESTERN DIGITAL TECH INC5 citations84
US10997993B1May 4, 2021

Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head

WESTERN DIGITAL TECH INC5 citations84
US10950260B1Mar 16, 2021

Magnetoresistive sensor with improved magnetic properties and magnetostriction control

WESTERN DIGITAL TECH INC7 citations84
US10839833B1Nov 17, 2020

Spin transfer torque device with oxide layer beneath the seed layer

WESTERN DIGITAL TECH INC7 citations84
US11127420B1Sep 21, 2021

Seed layer for spin torque oscillator in microwave assisted magnetic recording device

WESTERN DIGITAL TECH INC8 citations83
US10566015B2Feb 18, 2020

Spin transfer torque (STT) device with template layer for heusler alloy magnetic layers

WESTERN DIGITAL TECH INC8 citations81
US11283006B1Mar 22, 2022

Methods and apparatus of high moment free layers for magnetic tunnel junctions

WESTERN DIGITAL TECH INC6 citations75
US12040114B2Jul 16, 2024

Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture

WESTERN DIGITAL TECH INC2 citations73
US11211083B1Dec 28, 2021

MAMR head with synthetic antiferromagnetic (SAF) coupled notch

WESTERN DIGITAL TECH INC2 citations73

HGST Netherlands BV

5 patents

IBM

3 patents

HITACHI GLOBAL STORAGE TECH NL

1 patent

FREITAG JAMES MAC

1 patent

Showing the top 50 of 95 patents by PatentIndex Score.