Inventor
CHOI JAE-HYOUNG
KR42 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JAE-HYOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
36 patentsUS7482677B2Jan 27, 2009
Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures
SAMSUNG ELECTRONICS CO LTD88 citations98
US7723770B2May 25, 2010
Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions
SAMSUNG ELECTRONICS CO LTD15 citations92
US7655519B2Feb 2, 2010
Methods of fabricating metal-insulator-metal capacitors with a chemical barrier layer in a lower electrode
SAMSUNG ELECTRONICS CO LTD9 citations84
US7179739B2Feb 20, 2007
Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitor
SAMSUNG ELECTRONICS CO LTD10 citations84
US7172946B2Feb 6, 2007
Methods for forming semiconductor devices including thermal processing
SAMSUNG ELECTRONICS CO LTD10 citations84
US7482242B2Jan 27, 2009
Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US10636795B2Apr 28, 2020
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations82
US9978753B2May 22, 2018
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations82
US8790986B2Jul 29, 2014
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations82
US8012823B2Sep 6, 2011
Methods of fabricating stack type capacitors of semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations82
US7973352B2Jul 5, 2011
Capacitors having composite dielectric layers containing crystallization inhibiting regions
SAMSUNG ELECTRONICS CO LTD4 citations74
US7442604B2Oct 28, 2008
Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films
SAMSUNG ELECTRONICS CO LTD8 citations74
US8357613B2Jan 22, 2013
Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing
SAMSUNG ELECTRONICS CO LTD6 citations73
US7205219B2Apr 17, 2007
Methods of forming integrated circuits devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate
SAMSUNG ELECTRONICS CO LTD5 citations73
US9893142B2Feb 13, 2018
Method for manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations72
US10297600B2May 21, 2019
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US9923047B2Mar 20, 2018
Method for manufacturing a capacitor for semiconductor devices
SAMSUNG ELECTRONICS CO LTD3 citations71
US9059330B2Jun 16, 2015
Methods of forming integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions
SAMSUNG ELECTRONICS CO LTD1 citations63
US7442981B2Oct 28, 2008
Capacitor of semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US9324781B2Apr 26, 2016
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9059331B2Jun 16, 2015
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7495292B2Feb 24, 2009
Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate
SAMSUNG ELECTRONICS CO LTD3 citations62
US7422943B2Sep 9, 2008
Semiconductor device capacitors with oxide-nitride layers and methods of fabricating such capacitors
SAMSUNG ELECTRONICS CO LTD3 citations62
US7314806B2Jan 1, 2008
Methods of forming metal-insulator-metal (MIM) capacitors with separate seed
SAMSUNG ELECTRONICS CO LTD5 citations62
US6995071B2Feb 7, 2006
Methods of forming MIM type capacitor structures using low temperature plasma processing
SAMSUNG ELECTRONICS CO LTD6 citations62
US11177263B2Nov 16, 2021
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US7425761B2Sep 16, 2008
Method of manufacturing a dielectric film in a capacitor
SAMSUNG ELECTRONICS CO LTD6 citations61
US7304367B2Dec 4, 2007
Metal-insulator-metal capacitors including transition metal silicide films on doped polysilicon contact plugs
SAMSUNG ELECTRONICS CO LTD6 citations61
US9685498B2Jun 20, 2017
Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US8344439B2Jan 1, 2013
Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions and methods of forming same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7648874B2Jan 19, 2010
Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure
SAMSUNG ELECTRONICS CO LTD0 citations52
US7416904B2Aug 26, 2008
Method for forming dielectric layer of capacitor
SAMSUNG ELECTRONICS CO LTD0 citations52
US7338863B2Mar 4, 2008
Semiconductor memory device and method of manufacturing the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7335550B2Feb 26, 2008
Methods for forming semiconductor devices including thermal processing
SAMSUNG ELECTRONICS CO LTD0 citations52
US9685450B2Jun 20, 2017
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12543330B2Feb 3, 2026
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations48