Inventor
TANDINGAN JOSEPH S
US4 patents
Patents
4 patentsUS10074422B1Sep 11, 2018
2T1C ferro-electric random access memory cell
CYPRESS SEMICONDUCTOR CORP25 citations91
US10332596B2Jun 25, 2019
2T1C ferro-electric random access memory cell
CYPRESS SEMICONDUCTOR CORP0 citations49
US9997237B2Jun 12, 2018
10-transistor non-volatile static random-access memory using a single non-volatile memory element and method of operation thereof
CYPRESS SEMICONDUCTOR CORP0 citations48
US9646694B2May 9, 2017
10-transistor non-volatile static random-access memory using a single non-volatile memory element and method of operation thereof
CYPRESS SEMICONDUCTOR CORP0 citations48