Inventor
KOIKE MASAYOSHI
JP78 patents
⚠️ This page may combine multiple inventors who share the name “KOIKE MASAYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
43 patentsUS7491984B2Feb 17, 2009
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK170 citations99
US6040588AMar 21, 2000
Semiconductor light-emitting device
TOYODA GOSEI KK112 citations99
US5945689AAug 31, 1999
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK111 citations99
US5862167AJan 19, 1999
Light-emitting semiconductor device using gallium nitride compound
TOYODA GOSEI KK177 citations99
US6645295B1Nov 11, 2003
Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
TOYODA GOSEI KK112 citations98
US6620643B1Sep 16, 2003
Light-emitting device using group III nitride compound semiconductor
TOYODA GOSEI KK96 citations98
US6420733B2Jul 16, 2002
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK80 citations98
US5959401ASep 28, 1999
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK133 citations98
US5620557AApr 15, 1997
Sapphireless group III nitride semiconductor and method for making same
TOYODA GOSEI KK139 citations98
US7138286B2Nov 21, 2006
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK47 citations96
US6541293B2Apr 1, 2003
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK63 citations96
US6326236B1Dec 4, 2001
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK78 citations96
US6288416B1Sep 11, 2001
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK44 citations96
US6265726B1Jul 24, 2001
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
TOYODA GOSEI KK62 citations96
US6005258ADec 21, 1999
Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
TOYODA GOSEI KK69 citations96
US5753939AMay 19, 1998
Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed
TOYODA GOSEI KK80 citations96
US5700713ADec 23, 1997
Light emitting semiconductor device using group III nitride compound and method of producing the same
TOYODA GOSEI KK76 citations96
US5652438AJul 29, 1997
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK68 citations96
US5650641AJul 22, 1997
Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
TOYODA GOSEI KK56 citations96
US7084421B2Aug 1, 2006
Light-emitting device using group III nitride group compound semiconductor
TOYODA GOSEI KK20 citations93
US6946788B2Sep 20, 2005
Light-emitting element
TOYODA GOSEI KK42 citations93
US6679947B2Jan 20, 2004
Semiconductor substrate
TOYODA GOSEI KK15 citations93
US6471770B2Oct 29, 2002
Method of manufacturing semiconductor substrate
TOYODA GOSEI KK20 citations93
US5604763AFeb 18, 1997
Group III nitride compound semiconductor laser diode and method for producing same
TOYODA GOSEI KK49 citations93
US7141444B2Nov 28, 2006
Production method of III nitride compound semiconductor and III nitride compound semiconductor element
TOYODA GOSEI KK27 citations92
US6979584B2Dec 27, 2005
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
TOYODA GOSEI KK20 citations92
US6861305B2Mar 1, 2005
Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK34 citations92
US6821800B2Nov 23, 2004
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK29 citations92
US6631149B1Oct 7, 2003
Laser diode using group III nitride group compound semiconductor
TOYODA GOSEI KK33 citations92
US6552376B1Apr 22, 2003
Group III nitride compound semiconductor device
TOYODA GOSEI KK18 citations92
US6541798B2Apr 1, 2003
Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device
TOYODA GOSEI KK18 citations92
US5953581ASep 14, 1999
Methods for manufacturing group III nitride compound semiconductor laser diodes
TOYODA GOSEI KK24 citations92
US5889806AMar 30, 1999
Group III nitride compound semiconductor laser diodes
TOYODA GOSEI KK39 citations92
US5811319ASep 22, 1998
Methods of forming electrodes on gallium nitride group compound semiconductors
TOYODA GOSEI KK26 citations92
US7560725B2Jul 14, 2009
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK11 citations84
US6855620B2Feb 15, 2005
Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
TOYODA GOSEI KK20 citations84
US6830948B2Dec 14, 2004
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
TOYODA GOSEI KK15 citations84
US7867800B2Jan 11, 2011
Light-emitting semiconductor device using group III nitrogen compound
TOYODA GOSEI KK5 citations74
US7001790B2Feb 21, 2006
Light-emitting aluminum gallium indium nitride compound semiconductor device having an improved luminous intensity
TOYODA GOSEI KK3 citations74
US6860943B2Mar 1, 2005
Method for producing group III nitride compound semiconductor
TOYODA GOSEI KK8 citations74
US6790279B2Sep 14, 2004
Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
TOYODA GOSEI KK7 citations74
US6680957B1Jan 20, 2004
Group III nitride compound semiconductor laser
TOYODA GOSEI KK12 citations74
US6645785B2Nov 11, 2003
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK11 citations74
SAMSUNG ELECTRO MECH
5 patentsUS7514720B2Apr 7, 2009
White light emitting device
SAMSUNG ELECTRO MECH83 citations97
US7737429B2Jun 15, 2010
Nitride based semiconductor device using nanorods and process for preparing the same
SAMSUNG ELECTRO MECH11 citations83
US7645688B2Jan 12, 2010
Method of growing non-polar m-plane nitride semiconductor
SAMSUNG ELECTRO MECH12 citations82
US7601621B2Oct 13, 2009
Method of forming surface irregularities and method of manufacturing gallium nitride-based light emitting diode
SAMSUNG ELECTRO MECH12 citations79
US7063997B2Jun 20, 2006
Process for producing nitride semiconductor light-emitting device
SAMSUNG ELECTRO MECH9 citations74
SAMSUNG LED CO LTD
1 patentTOYOTA CHUO KENKYUSHO KK
1 patentShowing the top 50 of 78 patents by PatentIndex Score.