Inventor
TEZEN YUTA
JP15 patents
⚠️ This page may combine multiple inventors who share the name “TEZEN YUTA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
13 patentsUS7491984B2Feb 17, 2009
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK170 citations99
US7052979B2May 30, 2006
Production method for semiconductor crystal and semiconductor luminous element
TOYODA GOSEI KK56 citations96
US7462867B2Dec 9, 2008
Group III nitride compound semiconductor devices and method for fabricating the same
TOYODA GOSEI KK27 citations92
US7141444B2Nov 28, 2006
Production method of III nitride compound semiconductor and III nitride compound semiconductor element
TOYODA GOSEI KK27 citations92
US6979584B2Dec 27, 2005
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
TOYODA GOSEI KK20 citations92
US6967122B2Nov 22, 2005
Group III nitride compound semiconductor and method for manufacturing the same
TOYODA GOSEI KK19 citations92
US6861305B2Mar 1, 2005
Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK34 citations92
US6631149B1Oct 7, 2003
Laser diode using group III nitride group compound semiconductor
TOYODA GOSEI KK33 citations92
US7560725B2Jul 14, 2009
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK11 citations84
US6855620B2Feb 15, 2005
Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
TOYODA GOSEI KK20 citations84
US6830948B2Dec 14, 2004
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
TOYODA GOSEI KK15 citations84
US6680957B1Jan 20, 2004
Group III nitride compound semiconductor laser
TOYODA GOSEI KK12 citations74
US6518599B2Feb 11, 2003
Light-emitting device using group III nitride group compound semiconductor
TOYODA GOSEI KK2 citations58