Inventor
NAGAI SEIJI
JP45 patents
⚠️ This page may combine multiple inventors who share the name “NAGAI SEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
29 patentsUS7491984B2Feb 17, 2009
Method for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK170 citations99
US6040588AMar 21, 2000
Semiconductor light-emitting device
TOYODA GOSEI KK112 citations99
US6645295B1Nov 11, 2003
Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
TOYODA GOSEI KK112 citations98
US6420733B2Jul 16, 2002
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK80 citations98
US7052979B2May 30, 2006
Production method for semiconductor crystal and semiconductor luminous element
TOYODA GOSEI KK56 citations96
US6541293B2Apr 1, 2003
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK63 citations96
US6326236B1Dec 4, 2001
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK78 citations96
US6679947B2Jan 20, 2004
Semiconductor substrate
TOYODA GOSEI KK15 citations93
US6471770B2Oct 29, 2002
Method of manufacturing semiconductor substrate
TOYODA GOSEI KK20 citations93
US7141444B2Nov 28, 2006
Production method of III nitride compound semiconductor and III nitride compound semiconductor element
TOYODA GOSEI KK27 citations92
US6861305B2Mar 1, 2005
Methods for fabricating group III nitride compound semiconductors and group III nitride compound semiconductor devices
TOYODA GOSEI KK34 citations92
US6821800B2Nov 23, 2004
Semiconductor light-emitting device and manufacturing method thereof
TOYODA GOSEI KK29 citations92
US5953581ASep 14, 1999
Methods for manufacturing group III nitride compound semiconductor laser diodes
TOYODA GOSEI KK24 citations92
US5889806AMar 30, 1999
Group III nitride compound semiconductor laser diodes
TOYODA GOSEI KK39 citations92
US5811319ASep 22, 1998
Methods of forming electrodes on gallium nitride group compound semiconductors
TOYODA GOSEI KK26 citations92
US6855620B2Feb 15, 2005
Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
TOYODA GOSEI KK20 citations84
US7011707B2Mar 14, 2006
Production method for semiconductor substrate and semiconductor element
TOYODA GOSEI KK11 citations82
US6790279B2Sep 14, 2004
Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
TOYODA GOSEI KK7 citations74
US6680957B1Jan 20, 2004
Group III nitride compound semiconductor laser
TOYODA GOSEI KK12 citations74
US6486068B2Nov 26, 2002
Method for manufacturing group III nitride compound semiconductor laser diodes
TOYODA GOSEI KK10 citations74
US6844246B2Jan 18, 2005
Production method of III nitride compound semiconductor, and III nitride compound semiconductor element based on it
TOYODA GOSEI KK10 citations73
US9567693B2Feb 14, 2017
Method for producing a group III nitride semiconductor single crystal and method for producing a GaN substrate
TOYODA GOSEI KK2 citations71
US6964705B2Nov 15, 2005
Method for producing semiconductor crystal
TOYODA GOSEI KK6 citations63
US6716655B2Apr 6, 2004
Group III nitride compound semiconductor element and method for producing the same
TOYODA GOSEI KK3 citations63
US9388506B2Jul 12, 2016
Semiconductor crystal removal apparatus and production method for semiconductor crystal
TOYODA GOSEI KK0 citations52
US7708833B2May 4, 2010
Crystal growing apparatus
TOYODA GOSEI KK0 citations52
US9153439B2Oct 6, 2015
Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrate
TOYODA GOSEI KK0 citations48
US8361222B2Jan 29, 2013
Method for producing group III nitride-based compound semiconductor
TOYODA GOSEI KK0 citations42
US9691610B2Jun 27, 2017
Method for producing a group III nitride semiconductor crystal and method for producing a GaN substrate
TOYODA GOSEI KK0 citations38
NAGAI SEIJI
3 patentsUS9263258B2Feb 16, 2016
Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device
NAGAI SEIJI2 citations60
US8507364B2Aug 13, 2013
N-type group III nitride-based compound semiconductor and production method therefor
NAGAI SEIJI4 citations60
US8216365B2Jul 10, 2012
Method for producing a semiconductor crystal
NAGAI SEIJI0 citations50