Inventor

NOGAMI TAKESHI

US198 patents

⚠️ This page may combine multiple inventors who share the name “NOGAMI TAKESHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NOGAMI TAKESHI

ADVANCED MICRO DEVICES INC

Method of forming copper/copper alloy interconnection with reduced electromigration

Method of electroplating a copper or copper alloy interconnect

Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate

Copper interconnect with improved electromigration resistance

Method for forming semiconductor seed layers by inert gas sputter etching

Method for forming low dielectric passivation of copper interconnects

Process for reducing copper oxide during integrated circuit fabrication

Copper interconnect methodology for enhanced electromigration resistance

Self-aligned semiconductor interconnect barrier and manufacturing method therefor

Method of forming reliable capped copper interconnects

Method of forming reliable capped copper interconnects

Graded compound seed layers for semiconductors

Copper metalization with improved electromigration resistance

Method of forming reliable copper interconnects

Graded compound seed layers for semiconductors

Method of reliably capping copper interconnects

Method of improving Cu damascene interconnect reliability by laser anneal before barrier polish

Method for reducing electromigration in a copper interconnect

Integrated circuit chip with high-aspect ratio vias

Semiconductor device comprising copper interconnects with reduced in-line copper diffusion

Prevention of inter-channel current leakage in semiconductors

Semiconductor device having an intermetallic layer on metal interconnects

Method of making a semiconductor device comprising copper interconnects with reduced in-line copper diffusion

Method and system for providing an interconnect having reduced failure rates due to voids

Via with barrier layer for impeding diffusion of conductive material from via into insulator

IBM

Self-forming barrier for use in air gap formation

Interconnect with titanium—oxide diffusion barrier

Copper interconnect with filled void

Air gap and air spacer pinch off

Self-forming embedded diffusion barriers

Copper interconnect structure with manganese oxide barrier layer

Copper interconnect structure with manganese oxide barrier layer

Low-resistivity metallic interconnect structures with self-forming diffusion barrier layers

Copper interconnect structure with manganese oxide barrier layer

Method of forming a copper based interconnect structure

Interconnect structure with barrier layer

Interconnect structure with capping layer and barrier layer

Large grain size conductive structure for narrow interconnect openings

SONY CORP

Method for producing semiconductor device polishing apparatus, and polishing method

Electro-chemical machining appartus

Cobalt tungsten phosphate used to fill voids arising in a copper metallization process

Electrolytic polishing method

Methods of producing and polishing semiconductor device and polishing apparatus

Method of manufacturing a semiconductor device

YANG CHIH-CHAO

Pad bonding employing a self-aligned plated liner for adhesion enhancement

(unassigned)

Method for making multilayered coaxial interconnect structure

AMD

Copper/low dielectric interconnect formation with reduced electromigration

ADVANCED MICRO DEVICE

Method of metal/polysilicon gate formation in a field effect transistor

EDELSTEIN DANIEL C

Microelectronic structure including air gap

PONOTH SHOM

Creation of vias and trenches with different depths