Inventor
RIZZOLO MICHAEL
US208 patents
⚠️ This page may combine multiple inventors who share the name “RIZZOLO MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
44 patentsUS9837355B2Dec 5, 2017
Method for maximizing air gap in back end of the line interconnect through via landing modification
IBM313 citations99
US10707413B1Jul 7, 2020
Formation of embedded magnetic random-access memory devices
IBM46 citations95
US10395986B1Aug 27, 2019
Fully aligned via employing selective metal deposition
IBM24 citations94
US10243020B1Mar 26, 2019
Structures and methods for embedded magnetic random access memory (MRAM) fabrication
IBM18 citations94
US9966337B1May 8, 2018
Fully aligned via with integrated air gaps
IBM22 citations94
US9911651B1Mar 6, 2018
Skip-vias bypassing a metallization level at minimum pitch
IBM26 citations94
US9553019B1Jan 24, 2017
Airgap protection layer for via alignment
IBM20 citations93
US11223008B2Jan 11, 2022
Pillar-based memory hardmask smoothing and stress reduction
IBM6 citations86
US11195993B2Dec 7, 2021
Encapsulation topography-assisted self-aligned MRAM top contact
IBM7 citations84
US11004790B2May 11, 2021
Method of manufacturing an interconnect without dielectric exclusion zones by thermal decomposition of a sacrificial filler material
IBM4 citations84
US10770653B1Sep 8, 2020
Selective dielectric deposition to prevent gouging in MRAM
IBM7 citations84
US10366952B2Jul 30, 2019
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
IBM5 citations84
US10361157B2Jul 23, 2019
Method of manufacturing self-aligned interconnects by deposition of a non-conformal air-gap forming layer having an undulated upper surface
IBM6 citations84
US10297750B1May 21, 2019
Wraparound top electrode line for crossbar array resistive switching device
IBM11 citations84
US10204828B1Feb 12, 2019
Enabling low resistance gates and contacts integrated with bilayer dielectrics
IBM8 citations84
US10109579B2Oct 23, 2018
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
IBM8 citations84
US10096769B2Oct 9, 2018
Bottom electrode for MRAM applications
IBM7 citations84
US10083905B2Sep 25, 2018
Skip-vias bypassing a metallization level at minimum pitch
IBM9 citations84
US10045096B2Aug 7, 2018
Social media modification of behavior and mobile screening for impairment
IBM9 citations84
US9997451B2Jun 12, 2018
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
IBM5 citations84
US9985199B1May 29, 2018
Prevention of switching of spins in magnetic tunnel junctions by on-chip parasitic magnetic shield
IBM8 citations84
US9941088B2Apr 10, 2018
Fold over emitter and collector field emission transistor
IBM6 citations84
US9917137B1Mar 13, 2018
Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects
IBM14 citations84
US9858388B1Jan 2, 2018
Health monitoring using parallel cognitive processing
IBM9 citations84
US9837305B1Dec 5, 2017
Forming deep airgaps without flop over
IBM10 citations84
US9793206B1Oct 17, 2017
Heterogeneous metallization using solid diffusion removal of metal interconnects
IBM8 citations84
US9758095B2Sep 12, 2017
Smartwatch blackbox
IBM5 citations84
US9754883B1Sep 5, 2017
Hybrid metal interconnects with a bamboo grain microstructure
IBM14 citations84
US9666474B2May 30, 2017
Uniform dielectric recess depth during fin reveal
IBM5 citations84
US9548243B1Jan 17, 2017
Self aligned via and pillar cut for at least a self aligned double pitch
IBM7 citations84
US9431205B1Aug 30, 2016
Fold over emitter and collector field emission transistor
IBM8 citations84
US9418327B1Aug 16, 2016
Security key system
IBM6 citations84
US9418934B1Aug 16, 2016
Structure and fabrication method for electromigration immortal nanoscale interconnects
IBM10 citations84
US9780035B1Oct 3, 2017
Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects
IBM10 citations83
US11735524B2Aug 22, 2023
Electrical device having conductive lines with air gaps therebetween and interconnects without exclusion zones
IBM3 citations73
US11502242B2Nov 15, 2022
Embedded memory devices
IBM2 citations73
US11476415B2Oct 18, 2022
Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features
IBM3 citations73
US11348060B2May 31, 2022
Increasing cost benefit and energy efficiency with modular delivery drones in inclement weather
IBM2 citations73
US11177437B2Nov 16, 2021
Alignment through topography on intermediate component for memory device patterning
IBM2 citations73
US11121173B2Sep 14, 2021
Preserving underlying dielectric layer during MRAM device formation
IBM2 citations73
US11069854B2Jul 20, 2021
Laser anneal for MRAM encapsulation enhancement
IBM2 citations73
US11018090B2May 25, 2021
Selective CVD alignment-mark topography assist for non-volatile memory
IBM2 citations73
US10912986B2Feb 9, 2021
Dynamic rigidity mechanism
IBM3 citations73
US10833266B2Nov 10, 2020
Resistive memory crossbar array with ruthenium protection layer
IBM2 citations73
TESSERA INC
3 patentsUS11056429B2Jul 6, 2021
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
TESSERA INC4 citations84
US10629529B2Apr 21, 2020
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
TESSERA INC3 citations84
US10964588B2Mar 30, 2021
Selective ILD deposition for fully aligned via with airgap
TESSERA INC2 citations73
ADEIA SEMICONDUCTOR SOLUTIONS LLC
2 patentsUS12218003B2Feb 4, 2025
Selective ILD deposition for fully aligned via with airgap
ADEIA SEMICONDUCTOR SOLUTIONS LLC2 citations75
US11955424B2Apr 9, 2024
Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device
ADEIA SEMICONDUCTOR SOLUTIONS LLC1 citations73
TESSERA LLC
1 patentShowing the top 50 of 208 patents by PatentIndex Score.