P

Inventor

RIZZOLO MICHAEL

US208 patents
⚠️ This page may combine multiple inventors who share the name “RIZZOLO MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

44 patents
US9837355B2Dec 5, 2017

Method for maximizing air gap in back end of the line interconnect through via landing modification

IBM313 citations99
US10707413B1Jul 7, 2020

Formation of embedded magnetic random-access memory devices

IBM46 citations95
US10395986B1Aug 27, 2019

Fully aligned via employing selective metal deposition

IBM24 citations94
US10243020B1Mar 26, 2019

Structures and methods for embedded magnetic random access memory (MRAM) fabrication

IBM18 citations94
US9966337B1May 8, 2018

Fully aligned via with integrated air gaps

IBM22 citations94
US9911651B1Mar 6, 2018

Skip-vias bypassing a metallization level at minimum pitch

IBM26 citations94
US9553019B1Jan 24, 2017

Airgap protection layer for via alignment

IBM20 citations93
US11223008B2Jan 11, 2022

Pillar-based memory hardmask smoothing and stress reduction

IBM6 citations86
US11195993B2Dec 7, 2021

Encapsulation topography-assisted self-aligned MRAM top contact

IBM7 citations84
US11004790B2May 11, 2021

Method of manufacturing an interconnect without dielectric exclusion zones by thermal decomposition of a sacrificial filler material

IBM4 citations84
US10770653B1Sep 8, 2020

Selective dielectric deposition to prevent gouging in MRAM

IBM7 citations84
US10366952B2Jul 30, 2019

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

IBM5 citations84
US10361157B2Jul 23, 2019

Method of manufacturing self-aligned interconnects by deposition of a non-conformal air-gap forming layer having an undulated upper surface

IBM6 citations84
US10297750B1May 21, 2019

Wraparound top electrode line for crossbar array resistive switching device

IBM11 citations84
US10204828B1Feb 12, 2019

Enabling low resistance gates and contacts integrated with bilayer dielectrics

IBM8 citations84
US10109579B2Oct 23, 2018

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

IBM8 citations84
US10096769B2Oct 9, 2018

Bottom electrode for MRAM applications

IBM7 citations84
US10083905B2Sep 25, 2018

Skip-vias bypassing a metallization level at minimum pitch

IBM9 citations84
US10045096B2Aug 7, 2018

Social media modification of behavior and mobile screening for impairment

IBM9 citations84
US9997451B2Jun 12, 2018

Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

IBM5 citations84
US9985199B1May 29, 2018

Prevention of switching of spins in magnetic tunnel junctions by on-chip parasitic magnetic shield

IBM8 citations84
US9941088B2Apr 10, 2018

Fold over emitter and collector field emission transistor

IBM6 citations84
US9917137B1Mar 13, 2018

Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects

IBM14 citations84
US9858388B1Jan 2, 2018

Health monitoring using parallel cognitive processing

IBM9 citations84
US9837305B1Dec 5, 2017

Forming deep airgaps without flop over

IBM10 citations84
US9793206B1Oct 17, 2017

Heterogeneous metallization using solid diffusion removal of metal interconnects

IBM8 citations84
US9758095B2Sep 12, 2017

Smartwatch blackbox

IBM5 citations84
US9754883B1Sep 5, 2017

Hybrid metal interconnects with a bamboo grain microstructure

IBM14 citations84
US9666474B2May 30, 2017

Uniform dielectric recess depth during fin reveal

IBM5 citations84
US9548243B1Jan 17, 2017

Self aligned via and pillar cut for at least a self aligned double pitch

IBM7 citations84
US9431205B1Aug 30, 2016

Fold over emitter and collector field emission transistor

IBM8 citations84
US9418327B1Aug 16, 2016

Security key system

IBM6 citations84
US9418934B1Aug 16, 2016

Structure and fabrication method for electromigration immortal nanoscale interconnects

IBM10 citations84
US9780035B1Oct 3, 2017

Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects

IBM10 citations83
US11735524B2Aug 22, 2023

Electrical device having conductive lines with air gaps therebetween and interconnects without exclusion zones

IBM3 citations73
US11502242B2Nov 15, 2022

Embedded memory devices

IBM2 citations73
US11476415B2Oct 18, 2022

Patterning magnetic tunnel junctions and the like while reducing detrimental resputtering of underlying features

IBM3 citations73
US11348060B2May 31, 2022

Increasing cost benefit and energy efficiency with modular delivery drones in inclement weather

IBM2 citations73
US11177437B2Nov 16, 2021

Alignment through topography on intermediate component for memory device patterning

IBM2 citations73
US11121173B2Sep 14, 2021

Preserving underlying dielectric layer during MRAM device formation

IBM2 citations73
US11069854B2Jul 20, 2021

Laser anneal for MRAM encapsulation enhancement

IBM2 citations73
US11018090B2May 25, 2021

Selective CVD alignment-mark topography assist for non-volatile memory

IBM2 citations73
US10912986B2Feb 9, 2021

Dynamic rigidity mechanism

IBM3 citations73
US10833266B2Nov 10, 2020

Resistive memory crossbar array with ruthenium protection layer

IBM2 citations73

TESSERA INC

3 patents

ADEIA SEMICONDUCTOR SOLUTIONS LLC

2 patents

TESSERA LLC

1 patent

Showing the top 50 of 208 patents by PatentIndex Score.