Inventor
BARTHELMESS REINER
DE27 patents
⚠️ This page may combine multiple inventors who share the name “BARTHELMESS REINER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
14 patentsUS7361970B2Apr 22, 2008
Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
INFINEON TECHNOLOGIES AG21 citations92
US6441408B2Aug 27, 2002
Power semiconductor component for high reverse voltages
INFINEON TECHNOLOGIES AG35 citations92
US6770917B2Aug 3, 2004
High-voltage diode
INFINEON TECHNOLOGIES AG13 citations84
US7667297B2Feb 23, 2010
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
INFINEON TECHNOLOGIES AG5 citations74
US7884389B2Feb 8, 2011
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
INFINEON TECHNOLOGIES AG5 citations73
US7812368B2Oct 12, 2010
High speed diode
INFINEON TECHNOLOGIES AG3 citations63
US7749876B2Jul 6, 2010
Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone
INFINEON TECHNOLOGIES AG4 citations63
US7629665B2Dec 8, 2009
Semiconductor component with a channel stop zone
INFINEON TECHNOLOGIES AG6 citations63
US7687826B2Mar 30, 2010
Thyristor with recovery protection
INFINEON TECHNOLOGIES AG2 citations62
US7268079B2Sep 11, 2007
Method for fabricating a semiconductor having a field zone
INFINEON TECHNOLOGIES AG2 citations62
US8034700B2Oct 11, 2011
Method of fabricating a diode
INFINEON TECHNOLOGIES AG0 citations52
US7838969B2Nov 23, 2010
Diode
INFINEON TECHNOLOGIES AG0 citations52
US9876004B2Jan 23, 2018
Semiconductor component including a short-circuit structure
INFINEON TECHNOLOGIES AG0 citations51
US8018064B2Sep 13, 2011
Arrangement including a semiconductor device and a connecting element
INFINEON TECHNOLOGIES AG0 citations38
INFINEON TECH BIPOLAR GMBH & CO KG
5 patentsUS12342581B2Jun 24, 2025
Method and device for producing an edge structure of a semiconductor component
INFINEON TECH BIPOLAR GMBH & CO KG0 citations57
US11646365B2May 9, 2023
Short-circuit semiconductor component and method for operating same
INFINEON TECH BIPOLAR GMBH & CO KG0 citations41
US11664445B2May 30, 2023
Short-circuit semiconductor component and method for operating it
INFINEON TECH BIPOLAR GMBH & CO KG0 citations39
US11973147B2Apr 30, 2024
Power semiconductor component for voltage limiting, arrangement having two power semiconductor components, and a method for voltage limiting
INFINEON TECH BIPOLAR GMBH & CO KG0 citations38
US10008486B2Jun 26, 2018
Disc-shaped thyristor for a plurality of plated-through semiconductor components
INFINEON TECH BIPOLAR GMBH & CO KG0 citations34
EUPEC GMBH & CO KG
3 patentsUS6696705B1Feb 24, 2004
Power semiconductor component having a mesa edge termination
EUPEC GMBH & CO KG69 citations96
US6660569B1Dec 9, 2003
Method for producing a power semiconductor device with a stop zone
EUPEC GMBH & CO KG18 citations84
US7319250B2Jan 15, 2008
Semiconductor component and method for producing the same
EUPEC GMBH & CO KG0 citations52
BARTHELMESS REINER
3 patentsUS8187937B2May 29, 2012
Semiconductor component and method for producing the same
BARTHELMESS REINER0 citations49
US8178411B2May 15, 2012
Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone
BARTHELMESS REINER0 citations49
US8946867B2Feb 3, 2015
Semiconductor component with optimized edge termination
BARTHELMESS REINER0 citations38
SCHULZE HANS-JOACHIM
2 patentsUS9269769B2Feb 23, 2016
Semiconductor component including a short-circuit structure
SCHULZE HANS-JOACHIM1 citations51
US8415710B2Apr 9, 2013
Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
SCHULZE HANS-JOACHIM0 citations51