Inventor
STUTZIN GEOFFREY C
US3 patents
Patents
3 patentsUS6303413B1Oct 16, 2001
Method of forming a shallow and deep trench isolation (SDTI) suitable for silicon on insulator (SOI) substrates
MAXIM INTEGRATED PRODUCTS61 citations94
US6479394B1Nov 12, 2002
Method of low-selective etching of dissimilar materials having interfaces at non-perpendicular angles to the etch propagation direction
MAXIM INTEGRATED PRODUCTS13 citations71
US6593200B2Jul 15, 2003
Method of forming an integrated inductor and high speed interconnect in a planarized process with shallow trench isolation
MAXIM INTEGRATED PRODUCTS1 citations50