Inventor
PADMANABHAN GOBI R
US32 patents
⚠️ This page may combine multiple inventors who share the name “PADMANABHAN GOBI R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NAT SEMICONDUCTOR CORP
22 patentsUS6949421B1Sep 27, 2005
Method of forming a vertical MOS transistor
NAT SEMICONDUCTOR CORP240 citations99
US7075133B1Jul 11, 2006
Semiconductor die with heat and electrical pipes
NAT SEMICONDUCTOR CORP57 citations96
US7192819B1Mar 20, 2007
Semiconductor sensor device using MEMS technology
NAT SEMICONDUCTOR CORP21 citations92
US6833781B1Dec 21, 2004
High Q inductor in multi-level interconnect
NAT SEMICONDUCTOR CORP27 citations92
US6781239B1Aug 24, 2004
Integrated circuit and method of forming the integrated circuit having a die with high Q inductors and capacitors attached to a die with a circuit as a flip chip
NAT SEMICONDUCTOR CORP21 citations92
US6677235B1Jan 13, 2004
Silicon die with metal feed through structure
NAT SEMICONDUCTOR CORP29 citations92
US7044908B1May 16, 2006
Method and system for dynamically adjusting field of view in a capsule endoscope
NAT SEMICONDUCTOR CORP52 citations91
US7633131B1Dec 15, 2009
MEMS semiconductor sensor device
NAT SEMICONDUCTOR CORP9 citations84
US7329555B1Feb 12, 2008
Method of selectively forming MEMS-based semiconductor devices at the end of a common fabrication process
NAT SEMICONDUCTOR CORP13 citations84
US7052977B1May 30, 2006
Method of dicing a semiconductor wafer that substantially reduces the width of the saw street
NAT SEMICONDUCTOR CORP11 citations84
US7399274B1Jul 15, 2008
Sensor configuration for a capsule endoscope
NAT SEMICONDUCTOR CORP9 citations76
US7042092B1May 9, 2006
Multilevel metal interconnect and method of forming the interconnect with capacitive structures that adjust the capacitance of the interconnect
NAT SEMICONDUCTOR CORP7 citations74
US6946321B1Sep 20, 2005
Method of forming the integrated circuit having a die with high Q inductors and capacitors attached to a die with a circuit as a flip chip
NAT SEMICONDUCTOR CORP8 citations74
US6777288B1Aug 17, 2004
Vertical MOS transistor
NAT SEMICONDUCTOR CORP6 citations74
US6730969B1May 4, 2004
Radiation hardened MOS transistor
NAT SEMICONDUCTOR CORP9 citations73
US7338840B1Mar 4, 2008
Method of forming a semiconductor die with heat and electrical pipes
NAT SEMICONDUCTOR CORP4 citations63
US7790602B1Sep 7, 2010
Method of forming a metal interconnect with capacitive structures that adjust the capacitance of the interconnect
NAT SEMICONDUCTOR CORP1 citations52
US7482228B1Jan 27, 2009
Method of forming a MOS transistor with a litho-less gate
NAT SEMICONDUCTOR CORP1 citations52
US7230301B1Jun 12, 2007
Single-crystal silicon semiconductor structure
NAT SEMICONDUCTOR CORP0 citations52
US6746956B1Jun 8, 2004
Hermetic seal for silicon die with metal feed through structure
NAT SEMICONDUCTOR CORP1 citations52
US6723593B1Apr 20, 2004
Deep submicron MOS transistor with increased threshold voltage
NAT SEMICONDUCTOR CORP0 citations52
US7109571B1Sep 19, 2006
Method of forming a hermetic seal for silicon die with metal feed through structure
NAT SEMICONDUCTOR CORP0 citations42
LSI LOGIC CORP
9 patentsUS5731223AMar 24, 1998
Array of solder pads on an integrated circuit
LSI LOGIC CORP100 citations98
US5917207AJun 29, 1999
Programmable polysilicon gate array base cell architecture
LSI LOGIC CORP135 citations95
US5777383AJul 7, 1998
Semiconductor chip package with interconnect layers and routing and testing methods
LSI LOGIC CORP70 citations92
US5776831AJul 7, 1998
Method of forming a high electromigration resistant metallization system
LSI LOGIC CORP36 citations92
US5799080AAug 25, 1998
Semiconductor chip having identification/encryption code
LSI LOGIC CORP41 citations91
US5827777AOct 27, 1998
Method of making a barrier metal technology for tungsten plug interconnection
LSI LOGIC CORP18 citations90
US5600182AFeb 4, 1997
Barrier metal technology for tungsten plug interconnection
LSI LOGIC CORP20 citations90
US5702957ADec 30, 1997
Method of making buried metallization structure
LSI LOGIC CORP15 citations74
US5691218ANov 25, 1997
Method of fabricating a programmable polysilicon gate array base cell structure
LSI LOGIC CORP11 citations72