Inventor · disambiguated record
Sanaz K. Gardner
Also filed as: GARDNER SANAZ · GARDNER SANAZ K · GARDNER SANAZ KABEHIE
72 granted patents·8 pending applications·235 citations·filing 2012–2024
98Inventor score
Top patents by PatentIndex Score
80 records- 0196US8785909B2Non-planar semiconductor device having channel region with low band-gap cladding layerRADOSAVLJEVIC MARKO·Filed 2012·Granted Jul 22, 2014·28 cites·31 claims
- 0296US8768271B1Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2012·Granted Jul 1, 2014·16 cites·18 claims
- 0395US11764306B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
- 0495US9660064B2Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stackINTEL CORP·Filed 2013·Granted May 23, 2017·15 cites·26 claims
- 0594US9806203B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2016·Granted Oct 31, 2017·7 cites·36 claims
- 0694US8896101B2Nonplanar III-N transistors with compositionally graded semiconductor channelsTHEN HAN WUI·Filed 2012·Granted Nov 25, 2014·14 cites·19 claims
- 0793US10249740B2Ge nano wire transistor with GaAs as the sacrificial layerINTEL CORP·Filed 2015·Granted Apr 2, 2019·7 cites·18 claims
- 0893US10096683B2Group III-N transistor on nanoscale template structuresINTEL CORP·Filed 2017·Granted Oct 9, 2018·5 cites·20 claims
- 0993US10056456B2N-channel gallium nitride transistorsINTEL CORP·Filed 2014·Granted Aug 21, 2018·8 cites·25 claims
- 1092US9716149B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2016·Granted Jul 25, 2017·5 cites·20 claims
- 1191US10325774B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2014·Granted Jun 18, 2019·8 cites·16 claims
- 1291US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 1390US10665708B2Semiconductor devices with raised doped crystalline structuresINTEL CORP·Filed 2019·Granted May 26, 2020·4 cites·14 claims
- 1490US9590069B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2015·Granted Mar 7, 2017·5 cites·13 claims
- 1589US10032911B2Wide band gap transistor on non-native semiconductor substrateINTEL CORP·Filed 2017·Granted Jul 24, 2018·5 cites·16 claims
- 1689US8954021B2Group III-N transistors on nanoscale template structuresTHEN HAN WUI·Filed 2014·Granted Feb 10, 2015·5 cites·11 claims
- 1788US11004982B2Gate for a transistorINTEL CORP·Filed 2017·Granted May 11, 2021·5 cites·20 claims
- 1888US10229991B2III-N epitaxial device structures on free standing silicon mesasINTEL CORP·Filed 2014·Granted Mar 12, 2019·6 cites·25 claims
- 1988US9847448B2Forming LED structures on silicon finsINTEL CORP·Filed 2013·Granted Dec 19, 2017·8 cites·30 claims
- 2088US9362369B2Group III-N transistors on nanoscale template structuresINTEL CORP·Filed 2015·Granted Jun 7, 2016·3 cites·10 claims
- 2187US10930500B2Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devicesINTEL CORP·Filed 2019·Granted Feb 23, 2021·3 cites·18 claims
- 2287US10930766B2Ge NANO wire transistor with GAAS as the sacrificial layerINTEL CORP·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
- 2387US9373693B2Nonplanar III-N transistors with compositionally graded semiconductor channelsINTEL CORP·Filed 2014·Granted Jun 21, 2016·5 cites·6 claims
- 2486US9923087B2Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operationINTEL CORP·Filed 2017·Granted Mar 20, 2018·3 cites·19 claims
- 2585US11152514B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2017·Granted Oct 19, 2021·3 cites·25 claims
- 2685US2025079292A1Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitancesTAHOE RES LTD·Filed 2024·Application pending·0 cites
- 2783US9660085B2Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereofINTEL CORP·Filed 2013·Granted May 23, 2017·6 cites·16 claims
- 2882US9698013B2Methods and structures to prevent sidewall defects during selective epitaxyINTEL CORP·Filed 2013·Granted Jul 4, 2017·5 cites·20 claims
- 2981US12148690B2Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitancesTAHOE RES LTD·Filed 2023·Granted Nov 19, 2024·0 cites·6 claims
- 3081US10840352B2Nanowire transistors with embedded dielectric spacersINTEL CORP·Filed 2015·Granted Nov 17, 2020·3 cites·17 claims
- 3181US10475888B2Integration of III-V devices on Si wafersINTEL CORP·Filed 2017·Granted Nov 12, 2019·2 cites·18 claims
- 3280US12119409B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 3380US10665577B2Co-integrated III-N voltage regulator and RF power amplifier for envelope tracking systemsINTEL CORP·Filed 2015·Granted May 26, 2020·3 cites·20 claims
- 3480US10249742B2Offstate parasitic leakage reduction for tunneling field effect transistorsINTEL CORP·Filed 2015·Granted Apr 2, 2019·3 cites·22 claims
- 3580US9673045B2Integration of III-V devices on Si wafersINTEL CORP·Filed 2013·Granted Jun 6, 2017·3 cites·25 claims
- 3680US9219079B2Group III-N transistor on nanoscale template structuresINTEL CORP·Filed 2014·Granted Dec 22, 2015·2 cites·15 claims
- 3779US10431690B2High electron mobility transistors with localized sub-fin isolationINTEL CORP·Filed 2015·Granted Oct 1, 2019·3 cites·20 claims
- 3878US10347544B2Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming sameINTEL CORP·Filed 2015·Granted Jul 9, 2019·2 cites·20 claims
- 3978US9640422B2III-N devices in Si trenchesINTEL CORP·Filed 2014·Granted May 2, 2017·3 cites·14 claims
- 4077US11056532B2Techniques for monolithic co-integration of polycrystalline thin-film bulk acoustic resonator devices and monocrystalline III-N semiconductor transistor devicesINTEL CORP·Filed 2016·Granted Jul 6, 2021·2 cites·18 claims
- 4175US11177376B2III-N epitaxial device structures on free standing silicon mesasINTEL CORP·Filed 2019·Granted Nov 16, 2021·1 cites·13 claims
- 4275US10756183B2N-channel gallium nitride transistorsINTEL CORP·Filed 2018·Granted Aug 25, 2020·1 cites·25 claims
- 4374US11587862B2Microelectronic devices having air gap structures integrated with interconnect for reduced parasitic capacitancesTAHOE RES LTD·Filed 2021·Granted Feb 21, 2023·0 cites·7 claims
- 4473US10580895B2Wide band gap transistors on non-native semiconductor substratesINTEL CORP·Filed 2018·Granted Mar 3, 2020·1 cites·11 claims
- 4570US9922826B2Integrated circuit die having reduced defect group III-nitride layer and methods associated therewithINTEL CORP·Filed 2014·Granted Mar 20, 2018·2 cites·25 claims
- 4669US10096474B2Methods and structures to prevent sidewall defects during selective epitaxyINTEL CORP·Filed 2017·Granted Oct 9, 2018·1 cites·10 claims
- 4768US10804386B2Gate stack design for GaN e-mode transistor performanceINTEL CORP·Filed 2016·Granted Oct 13, 2020·1 cites·20 claims
- 4867US11114556B2Gate stack design for GaN e-mode transistor performanceINTEL CORP·Filed 2020·Granted Sep 7, 2021·0 cites·21 claims
- 4967US10593785B2Transistors having ultra thin fin profiles and their methods of fabricationINTEL CORP·Filed 2015·Granted Mar 17, 2020·1 cites·25 claims
- 5066US10388777B2Heteroepitaxial structures with high temperature stable substrate interface materialINTEL CORP·Filed 2015·Granted Aug 20, 2019·1 cites·25 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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