Inventor
KHADERBAD MRUNAL A
TW35 patents
⚠️ This page may combine multiple inventors who share the name “KHADERBAD MRUNAL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
33 patentsUS11158539B2Oct 26, 2021
Method and structure for barrier-less plug
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11004794B2May 11, 2021
Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10854716B2Dec 1, 2020
Semiconductor device with source/drain contact formed using bottom-up deposition
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11404416B2Aug 2, 2022
Low resistance fill metal layer material as stressor in metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11018053B2May 25, 2021
Semiconductor structure with material modification and low resistance plug
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10998241B2May 4, 2021
Selective dual silicide formation using a maskless fabrication process flow
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10847413B2Nov 24, 2020
Method of forming contact plugs for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10515849B2Dec 24, 2019
Semiconductor device, interconnection structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12598766B2Apr 7, 2026
Contact interface engineering for reducing contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12431412B2Sep 30, 2025
Contact plugs for semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12426291B2Sep 23, 2025
Contact and via structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12389674B2Aug 12, 2025
Low resistance fill metal layer material as stressor in metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12362281B2Jul 15, 2025
Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12347725B2Jul 1, 2025
Semiconductor structure with material modification and low resistance plug
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12341013B2Jun 24, 2025
Method and structure for barrier-less plug
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266688B2Apr 1, 2025
Semiconductor device with source/drain contact formed using bottom-up deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051592B2Jul 30, 2024
Method and structure for barrier-less plug
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923367B2Mar 5, 2024
Low resistance fill metal layer material as stressor in metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854871B2Dec 26, 2023
Semiconductor structure with material modification and low resistance plug
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11776910B2Oct 3, 2023
Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11756864B2Sep 12, 2023
Contact plugs for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749682B2Sep 5, 2023
Selective dual silicide formation using a maskless fabrication process flow
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11715763B2Aug 1, 2023
Method of forming metal contact for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11380781B2Jul 5, 2022
Contact and via structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362212B2Jun 14, 2022
Contact interface engineering for reducing contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11211465B2Dec 28, 2021
Semiconductor device having gate dielectric and inhibitor film over gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11201232B2Dec 14, 2021
Semiconductor structure with metal containing layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10797161B2Oct 6, 2020
Method for manufacturing semiconductor structure using selective forming process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12266709B2Apr 1, 2025
Selective dual silicide formation using a maskless fabrication process flow
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11823896B2Nov 21, 2023
Conductive structure formed by cyclic chemical vapor deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510854B2Dec 17, 2019
Semiconductor device having gate body and inhibitor film between conductive prelayer over gate body and conductive layer over inhibitor film
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10256311B2Apr 9, 2019
Fin field effect transistor (FinFET)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10014382B2Jul 3, 2018
Semiconductor device with sidewall passivation and method of making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52