Inventor
LIN KENG-CHU
TW172 patents
⚠️ This page may combine multiple inventors who share the name “LIN KENG-CHU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
28 patentsUS10950731B1Mar 16, 2021
Inner spacers for gate-all-around semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD25 citations94
US11393924B2Jul 19, 2022
Structure and formation method of semiconductor device with high contact area
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11626494B2Apr 11, 2023
Epitaxial backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US11158539B2Oct 26, 2021
Method and structure for barrier-less plug
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10510580B2Dec 17, 2019
Dummy fin structures and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10510874B2Dec 17, 2019
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9870944B2Jan 16, 2018
Back-end-of-line (BEOL) interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9812390B2Nov 7, 2017
Semiconductor devices including conductive features with capping layers and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11855214B2Dec 26, 2023
Inner spacers for gate-all-around semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11855215B2Dec 26, 2023
Semiconductor device structure with high contact area
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11664268B2May 30, 2023
Dummy fin structures and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522074B2Dec 6, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11476365B2Oct 18, 2022
Fin field effect transistor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11404416B2Aug 2, 2022
Low resistance fill metal layer material as stressor in metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11227794B2Jan 18, 2022
Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11069558B2Jul 20, 2021
Dummy fin structures and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11011413B2May 18, 2021
Interconnect structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US10950714B2Mar 16, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10879111B1Dec 29, 2020
Dielectric plugs
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10761427B2Sep 1, 2020
Photoresist and method of formation and use
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510895B2Dec 17, 2019
Device and method of dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10181443B2Jan 15, 2019
Support structure for barrier layer of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11688766B2Jun 27, 2023
Seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11476333B2Oct 18, 2022
Dual channel structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11296187B2Apr 5, 2022
Seal material for air gaps in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9728402B2Aug 8, 2017
Flowable films and methods of forming flowable films
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US11942358B2Mar 26, 2024
Low thermal budget dielectric for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11776960B2Oct 3, 2023
Gate structures for stacked semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
TAIWAN SEMICONDUCTOR MFG
15 patentsUS7135402B2Nov 14, 2006
Sealing pores of low-k dielectrics using CxHy
TAIWAN SEMICONDUCTOR MFG59 citations94
US6846756B2Jan 25, 2005
Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers
TAIWAN SEMICONDUCTOR MFG39 citations93
US7564136B2Jul 21, 2009
Integration scheme for Cu/low-k interconnects
TAIWAN SEMICONDUCTOR MFG31 citations92
US7094705B2Aug 22, 2006
Multi-step plasma treatment method to improve CU interconnect electrical performance
TAIWAN SEMICONDUCTOR MFG28 citations90
US6656832B1Dec 2, 2003
Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties
TAIWAN SEMICONDUCTOR MFG30 citations89
US6638853B1Oct 28, 2003
Method for avoiding photoresist resist residue on semioconductor feature sidewalls
TAIWAN SEMICONDUCTOR MFG34 citations88
US9341945B2May 17, 2016
Photoresist and method of formation and use
TAIWAN SEMICONDUCTOR MFG5 citations84
US9093455B2Jul 28, 2015
Back-end-of-line (BEOL) interconnect structure
TAIWAN SEMICONDUCTOR MFG7 citations84
US9059259B2Jun 16, 2015
Hard mask for back-end-of-line (BEOL) interconnect structure
TAIWAN SEMICONDUCTOR MFG8 citations84
US7968451B2Jun 28, 2011
Method for forming self-assembled mono-layer liner for Cu/porous low-k interconnections
TAIWAN SEMICONDUCTOR MFG8 citations84
US7723226B2May 25, 2010
Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio
TAIWAN SEMICONDUCTOR MFG11 citations84
US6777336B2Aug 17, 2004
Method of forming a shallow trench isolation structure
TAIWAN SEMICONDUCTOR MFG13 citations84
US7365026B2Apr 29, 2008
CxHy sacrificial layer for cu/low-k interconnects
TAIWAN SEMICONDUCTOR MFG10 citations83
US7223692B2May 29, 2007
Multi-level semiconductor device with capping layer for improved adhesion
TAIWAN SEMICONDUCTOR MFG9 citations74
US7626245B2Dec 1, 2009
Extreme low-k dielectric film scheme for advanced interconnect
TAIWAN SEMICONDUCTOR MFG7 citations73
VANGUARD INT SEMICONDUCT CORP
2 patentsSHIH PO-CHENG
2 patentsKO CHUNG-CHI
1 patentLIOU JOUNG-WEI
1 patentYang hui-chun
1 patentShowing the top 50 of 172 patents by PatentIndex Score.