Inventor

WANG SUNG-LI

TW118 patents

⚠️ This page may combine multiple inventors who share the name “WANG SUNG-LI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG SUNG-LI

TAIWAN SEMICONDUCTOR MFG CO LTD

Wrap-around contact

Semiconductor devices, FinFET devices, and manufacturing methods thereof

Metal liner overhang reduction and manufacturing method thereof

Structure and formation method of semiconductor device with high contact area

Epitaxial backside contact

Method and structure for barrier-less plug

Semiconductor device and manufacturing method thereof

Interconnect structures and methods of forming the same

Semiconductor device with source/drain contact formed using bottom-up deposition

Wrap-around contact on FinFET

Semiconductor device and manufacturing method thereof

Wrap-around contact on FinFET

Semiconductor device and manufacturing method thereof

Wrap-around contact on FinFET

Contact structure of semiconductor device

Selective dual silicide formation

Field effect transistors with dual silicide contact structures

Middle-of-line interconnect structure and manufacturing method

Semiconductor device structure with high contact area

Dual side contact structures in semiconductor devices

Fin field effect transistor device structure and method for forming the same

Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure

Contact structures with deposited silicide layers

Interconnect structures and methods of forming the same

Method of forming contact plugs for semiconductor device

Wrap-around contact plug and method manufacturing same

Wrap-around contact plug and method manufacturing same

Semiconductor structure with enhanced contact and method of manufacture the same

Selective dual silicide formation

Field effect transistors with dual silicide contact structures

Selective dual silicide formation

Formation method of interconnection structure of semiconductor device

Semiconductor device having multi-layer epitaxial structures with different lattice constants

Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructures

Field effect transistor with multi-metal gate via and method

Semiconductor device having spacer residue

Semiconductor device and manufacturing method thereof

Semiconductor device having cap layer

Interconnect structures having lines and vias comprising different conductive materials

Semiconductor devices, FinFET devices, and manufacturing methods thereof

Semiconductor device and manufacturing method thereof

Interconnect structures and methods of forming the same

Contact interface engineering for reducing contact resistance

Dual side source/drain contact structures in semiconductor devices and method for forming the same

TAIWAN SEMICONDUCTOR MFG

Contact structure of semiconductor device

Contact structure of semiconductor device

FinFET low resistivity contact formation method

Contact structure of semiconductor device

Method of making a FinFET device

Contact structure of semiconductor device priority claim