Inventor

YEDINAK JOSEPH A

US49 patents

⚠️ This page may combine multiple inventors who share the name “YEDINAK JOSEPH A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YEDINAK JOSEPH A

FAIRCHILD SEMICONDUCTOR

Trench-gate field effect transistors and methods of forming the same

Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture

Method of forming trench-gate field effect transistors

Power semiconductor devices with shield and gate contacts and methods of manufacture

Trench-gate field effect transistor with channel enhancement region and methods of forming the same

Trench FET with improved body to gate alignment

Periphery design for charge balance power devices

Method of isolating the current sense on power devices while maintaining a continuous stripe cell

Method of isolating the current sense on power devices while maintaining a continuous stripe cell

Quick punch through IGBT having gate-controllable DI/DT and reduced EMI during inductive turn off

IGBT with channel resistors

Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-gate field effect transistor

Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device

Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device

Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Reduced process sensitivity of electrode-semiconductor rectifiers

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Superjunction structures for power devices

Methods and apparatus related to termination regions of a semiconductor device

Termination region of a semiconductor device

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Voltage divider field plate termination with unequal fixed biasing

MOSFET bridge circuit

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Ignition control circuit with dual (two-stage) clamp

YEDINAK JOSEPH A

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Methods of manufacturing power semiconductor devices with trenched shielded split gate transistor

Superjunction structures for power devices and methods of manufacture

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Methods of manufacturing power semiconductor devices with shield and gate contacts

Trench-based power semiconductor devices with increased breakdown voltage characteristics

Superjunction structures for power devices and methods of manufacture

Superjunction structures for power devices and methods of manufacture

Superjunction structures for power devices and methods of manufacture

Reduced process sensitivity of electrode-semiconductor rectifiers

HARRIS CORP

Power MOSFET transistor circuit with active clamp

Power vdmosfet with schottky on lightly doped drain of lateral driver fet

Power FET with gate segments covering drain regions disposed in a hexagonal pattern

Power fet having reduced threshold voltage

GREBS THOMAS E

Shielded gate field effect transistors

LEE JAEGIL

Superjunction structures for power devices

DIKSHIT ROHIT

Double layer metal (DLM) power MOSFET

YILMAZ HAMZA

Structure and method for forming trench-gate field effect transistor with source plug