Inventor

BENJAMIN JOHN L

US7 patents

⚠️ This page may combine multiple inventors who share the name “BENJAMIN JOHN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FAIRCHILD SEMICONDUCTOR

4 patents

US6465325B2Oct 15, 2002

Process for depositing and planarizing BPSG for dense trench MOSFET application

FAIRCHILD SEMICONDUCTOR127 citations95

US8049276B2Nov 1, 2011

Reduced process sensitivity of electrode-semiconductor rectifiers

FAIRCHILD SEMICONDUCTOR6 citations73

US6358825B1Mar 19, 2002

Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control

FAIRCHILD SEMICONDUCTOR13 citations69

US7332750B1Feb 19, 2008

Power semiconductor device with improved unclamped inductive switching capability and process for forming same

FAIRCHILD SEMICONDUCTOR5 citations55

GEN ELECTRIC

2 patents

US4778776AOct 18, 1988

Passivation with a low oxygen interface

GEN ELECTRIC18 citations68

US4597822AJul 1, 1986

Method for making silicon wafers

GEN ELECTRIC3 citations59

YEDINAK JOSEPH A

1 patent

US8492837B2Jul 23, 2013

Reduced process sensitivity of electrode-semiconductor rectifiers

YEDINAK JOSEPH A1 citations51