Inventor

NIRSCHL THOMAS

DE67 patents

⚠️ This page may combine multiple inventors who share the name “NIRSCHL THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NIRSCHL THOMAS

INFINEON TECHNOLOGIES AG

Integrated circuit having dielectric layer including nanocrystals

Integrated circuit having a resistive memory

Resistive memory including bipolar transistor access devices

Compact memory arrays

Method of programming resistivity changing memory

Fuse sensing scheme

System and method for regulating a power supply

Data retention monitor

Readout of multi-level storage cells

Memory having storage locations within a common volume of phase change material

Integrated memory having a precharge circuit for precharging a bit line

Integrated circuit and method for manufacturing same

Phase-change memory security device

SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell

Semiconductor memory cell and associated fabrication method

Systems and methods utilizing a flexible read reference for a dynamic read window

Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor

System and method for bit-line control

Integrated circuit having a drive circuit

Device with damaged breakdown layer

Integrated circuit memory having a read circuit

Method and apparatus for switching on a voltage supply of a semiconductor circuit and corresponding semiconductor circuit

ROM memory cell having defined bit line voltages

Memory cell arrangements

Semiconductor memory cell and corresponding method of producing same

Current sense amplifier with replica bias scheme

QIMONDA NORTH AMERICA CORP

Memory cell with trigger element

Integrated circuit for programming a memory element

Multi-bit resistive memory

Integrated circuit including logic portion and memory portion

Memory including write circuit for providing multiple reset pulses

Resistive memory having shunted memory cells

Memory including two access devices per phase change element

NIRSCHL THOMAS

Integrated circuit including resistivity changing material element

System and method for level shifter

Memory using tunneling field effect transistors

System and method for bit-line control using a driver and a pre-driver

NVM overlapping write method

QIMONDA AG

Memory with dynamic redundancy configuration

Conditioning operations for memory cells

Memory using tunneling field effect transistors

GAMMEL BERNDT

Electronic device with a programmable resistive element and a method for blocking a device

Electronic device with a programmable resistive element and a method for blocking a device

MACRONIX INT CO LTD

Current compliant sensing architecture for multilevel phase change memory

INFINEON TECHNOLOGIES CORP

Quasi-differential read operation

KAKOSCHKE RONALD

Integrated memory device having columns having multiple bit lines

IBM

Phase change memory cell having a sidewall contact

HOLZ JUERGEN

Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor

OTTERSTEDT JAN

Memory circuit and method for programming in parallel a number of bits within data blocks

MUELLER DAVID

Current sense amplifier with replica bias scheme