Inventor · disambiguated record
Kyu S. Min
Also filed as: MIN KYU · MIN KYU S
24 granted patents·10 pending applications·405 citations·filing 2002–2020
96Inventor score
Top patents by PatentIndex Score
34 records- 0199US7267875B2Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating sameNANOSYS INC·Filed 2005·Granted Sep 11, 2007·131 cites·40 claims
- 0297US8228743B2Memory cells containing charge-trapping zonesMIN KYU S·Filed 2011·Granted Jul 24, 2012·45 cites·7 claims
- 0396US7585564B2Post-deposition encapsulation of nanostructures: compositions, devices and systems incorporating sameNANOSYS INC·Filed 2007·Granted Sep 8, 2009·43 cites·25 claims
- 0495US8183110B2Memory cells, methods of forming dielectric materials, and methods of forming memory cellsRAMASWAMY D V NIRMAL·Filed 2011·Granted May 22, 2012·20 cites·19 claims
- 0594US7223701B2In-situ sequential high density plasma deposition and etch processing for gap fillINTEL CORP·Filed 2002·Granted May 29, 2007·83 cites·34 claims
- 0693US7968406B2Memory cells, methods of forming dielectric materials, and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2009·Granted Jun 28, 2011·23 cites·14 claims
- 0793US7898850B2Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cellsMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 1, 2011·23 cites·14 claims
- 0879US8546944B2Multilayer dielectric memory deviceMIN KYU S·Filed 2010·Granted Oct 1, 2013·6 cites·36 claims
- 0979US7705389B2Thickened sidewall dielectric for memory cellMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 27, 2010·4 cites·13 claims
- 1077US8058140B2Thickened sidewall dielectric for memory cellWEIMER RON·Filed 2010·Granted Nov 15, 2011·4 cites·10 claims
- 1174US7795607B2Current focusing memory architecture for use in electrical probe-based memory storageINTEL CORP·Filed 2006·Granted Sep 14, 2010·6 cites·33 claims
- 1274US7773493B2Probe-based storage deviceINTEL CORP·Filed 2006·Granted Aug 10, 2010·2 cites·21 claims
- 1373US7763511B2Dielectric barrier for nanocrystalsINTEL CORP·Filed 2006·Granted Jul 27, 2010·5 cites·21 claims
- 1471US7989289B2Floating gate structuresINTEL CORP·Filed 2008·Granted Aug 2, 2011·5 cites·18 claims
- 1570US11257838B2Thickened sidewall dielectric for memory cellMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 22, 2022·0 cites·10 claims
- 1670US8643082B2Thickened sidewall dielectric for memory cellWEIMER RON·Filed 2011·Granted Feb 4, 2014·2 cites·25 claims
- 1764US7750433B2Probe-based memoryINTEL CORP·Filed 2009·Granted Jul 6, 2010·0 cites·7 claims
- 1862US8748264B2Self-aligned charge-trapping layers for non-volatile data storage, processes of forming same, and devices containing sameMIN KYU S·Filed 2007·Granted Jun 10, 2014·2 cites·5 claims
- 1957US8900946B2Method of forming layers using atomic layer depositionMICRON TECHNOLOGY INC·Filed 2014·Granted Dec 2, 2014·0 cites·21 claims
- 2056US10608005B2Thickened sidewall dielectric for memory cellMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 31, 2020·0 cites·13 claims
- 2156US8729704B2Multilayer dielectric memory deviceMIN KYU S·Filed 2013·Granted May 20, 2014·1 cites·20 claims
- 2255US9059301B2Self-aligned charge-trapping layers for non-volatile data storage, processes of forming same, and devices containing sameINTEL CORP·Filed 2014·Granted Jun 16, 2015·0 cites·8 claims
- 2355US8643079B2Nanocrystal formation using atomic layer deposition and resulting apparatusMAJHI PRASHANT·Filed 2008·Granted Feb 4, 2014·0 cites·26 claims
- 2446US2009321809A1Graded oxy-nitride tunnel barrierRAMASWAMY NIRMAL·Filed 2008·Application pending·0 cites
- 2546US2007105312A1Memory cell with nanocrystal as discrete storage elementMIN KYU S·Filed 2006·Application pending·0 cites
- 2644US2008237683A1High-k trilayer dielectric device and methodsMIN KYU S·Filed 2007·Application pending·0 cites
- 2743US2005032269A1Forming planarized semiconductor structuresFiled 2003·Application pending·0 cites
- 2841US7498655B2Probe-based memoryINTEL CORP·Filed 2006·Granted Mar 3, 2009·0 cites·20 claims
- 2941US2009001443A1Non-volatile memory cell with multi-layer blocking dielectricINTEL CORP·Filed 2007·Application pending·0 cites
- 3040US2006110883A1Method for forming a memory deviceINTEL CORP·Filed 2004·Application pending·0 cites
- 3140US2006098524A1Forming planarized semiconductor structuresXU DANIEL·Filed 2005·Application pending·0 cites
- 3239US2009242961A1Recessed channel select gate for a memory deviceTANG SANH·Filed 2008·Application pending·0 cites
- 3339US2006068540A1Sequential chemical vapor deposition - spin-on dielectric deposition processMIN KYU S·Filed 2004·Application pending·0 cites
- 3439US2011147827A1Flash memory with partially removed blocking dielectric in the wordline directionSIMSEK-EGE FATMA ARZUM·Filed 2009·Application pending·0 cites
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