Inventor
FONTANA MARCO
IT21 patents
⚠️ This page may combine multiple inventors who share the name “FONTANA MARCO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SGS THOMSON MICROELECTRONICS
10 patentsUS6175521B1Jan 16, 2001
Voltage regulator for programming electrically programmable non-volatile memory cells in a cell matrix
SGS THOMSON MICROELECTRONICS21 citations92
US6009041ADec 28, 1999
Method and circuit for trimming the internal timing conditions of a semiconductor memory device
SGS THOMSON MICROELECTRONICS29 citations92
US5659498AAug 19, 1997
Unbalanced latch and fuse circuit including the same
SGS THOMSON MICROELECTRONICS20 citations92
US5708604AJan 13, 1998
Dynamic selection control in a memory
SGS THOMSON MICROELECTRONICS15 citations74
US6148413ANov 14, 2000
Memory under test programming and reading device
SGS THOMSON MICROELECTRONICS5 citations63
US5841728ANov 24, 1998
Hierarchic memory device having auxiliary lines connected to word lines
SGS THOMSON MICROELECTRONICS2 citations62
US5821788AOct 13, 1998
Zero consumption power-on-reset
SGS THOMSON MICROELECTRONICS6 citations62
US5815437ASep 29, 1998
Data input/output managing device, particularly for a non-volatile memory
SGS THOMSON MICROELECTRONICS3 citations62
US6438669B2Aug 20, 2002
Timesharing internal bus, particularly for non-volatile memories
SGS THOMSON MICROELECTRONICS0 citations41
US5754483AMay 19, 1998
Reference word line and data propagation reproduction circuit for memories provided with hierarchical decoders
SGS THOMSON MICROELECTRONICS0 citations41
ST MICROELECTRONICS SRL
4 patentsUS6605985B2Aug 12, 2003
High-efficiency power charge pump supplying high DC output currents
ST MICROELECTRONICS SRL16 citations83
US5982677ANov 9, 1999
Compensated voltage regulator
ST MICROELECTRONICS SRL11 citations73
US5959902ASep 28, 1999
Voltage level shifter device, particulary for a nonvolatile memory
ST MICROELECTRONICS SRL10 citations73
US6075718AJun 13, 2000
Method and device for reading a non-erasable memory cell
ST MICROELECTRONICS SRL7 citations72