Inventor

LE ROYER CYRILLE

FR26 patents

⚠️ This page may combine multiple inventors who share the name “LE ROYER CYRILLE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LE ROYER CYRILLE

COMMISSARIAT ENERGIE ATOMIQUE

Local strain generation in an SOI substrate

Method for fabricating an integrated circuit including a NMOS transistor and a PMOS transistor

Fabrication of transistors having stressed channels

Fabrication method of a mixed substrate and use of the substrate for producing circuits

Method of making a quantum device

Tunnel transistor with high current by bipolar amplification

Dynamic memory cell provided with a field-effect transistor having zero swing

Transistor of the I-MOS type comprising two independent gates and method of using such a transistor

Field effect transistor with p-FET type behaviour

Method for manufacturing a transistor with a gate-all-around structure

Device comprising spacers including a localised airgap and associated manufacturing methods

Method for producing a component by filling a cavity within an electrical isolation area with carbon-based material

Method of producing microelectronic components

Semiconductor device and associated manufacturing method

Method for producing at least one device in compressive strained semiconductor

Method for manufacturing an electronic component having multiple quantum dots

Method for fabrication of a field-effect with reduced stray capacitance

Quantum device and method for producing the same

Method for making an electronic device with superconductor qubit(s) including at least one JoFET

Method for producing SiGe-based zones at different concentrations of Ge

ST MICROELECTRONICS SA

Air-spacer MOS transistor

Method for forming gate, source, and drain contacts on a MOS transistor

Commissariat à l'énergie atomique et aux énergies alternatives

Tunnel effect transistor

COMMISSARIAT Á L ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Tunnel field effect transistor

WAN JING

Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Method for making a quantum device