P

Inventor

KAWASE TOMOHIRO

JP55 patents
⚠️ This page may combine multiple inventors who share the name “KAWASE TOMOHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

24 patents
US6007622ADec 28, 1999

Method of preparing group III-V compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES21 citations92
US5830269ANov 3, 1998

Method of preparing group II-VI or III-V compound single crystal

SUMITOMO ELECTRIC INDUSTRIES20 citations92
US5656077AAug 12, 1997

Crucible for preparing compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES20 citations92
US5584929ADec 17, 1996

Method for preparing compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES27 citations92
US5290395AMar 1, 1994

Method of and apparatus for preparing single crystal

SUMITOMO ELECTRIC INDUSTRIES36 citations92
US7998847B2Aug 16, 2011

III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device

SUMITOMO ELECTRIC INDUSTRIES9 citations84
US9546437B2Jan 17, 2017

Ingot, silicon carbide substrate, and method for producing ingot

SUMITOMO ELECTRIC INDUSTRIES2 citations73
US6866714B2Mar 15, 2005

Large size semiconductor crystal with low dislocation density

SUMITOMO ELECTRIC INDUSTRIES10 citations73
US6780244B2Aug 24, 2004

Method for producing a semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES7 citations73
US6572700B2Jun 3, 2003

Semiconductor crystal, and method and apparatus of production thereof

SUMITOMO ELECTRIC INDUSTRIES10 citations73
US8361226B2Jan 29, 2013

III-nitride single-crystal growth method

SUMITOMO ELECTRIC INDUSTRIES2 citations63
USRE40662EMar 17, 2009

Method of preparing a compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES3 citations63
US7442355B2Oct 28, 2008

Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereof

SUMITOMO ELECTRIC INDUSTRIES5 citations63
USRE39778EAug 21, 2007

Method of preparing group III-V compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES2 citations63
US6485563B2Nov 26, 2002

Method of preparing a compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES2 citations63
US6273947B1Aug 14, 2001

Method of preparing a compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES3 citations63
US11955251B2Apr 9, 2024

Crystal and substrate of conductive GaAs, and method for forming the same

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US11017913B2May 25, 2021

Crystal and substrate of conductive GaAs, and method for forming the same

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US10427324B2Oct 1, 2019

Silicon carbide ingot and method for manufacturing silicon carbide substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations62
USRE42279EApr 12, 2011

Method of preparing a compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES0 citations52
USRE41551EAug 24, 2010

Method of preparing group III-V compound semiconductor crystal

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US10533265B2Jan 14, 2020

Growth container

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US9799735B2Oct 24, 2017

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations51
US9290860B2Mar 22, 2016

Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations51

NINTENDO CO LTD

8 patents

MATSUSHIMA YOSHIHIRO

4 patents

SHIMADZU CORP

4 patents

UYEMURA C & CO LTD

3 patents

HOTTA TERUYUKI

2 patents

KUWAHARA MASATO

1 patent

SAKURADA TAKASHI

1 patent

ISONO TOSHIHISA

1 patent

HIROTA RYU

1 patent

OKAHISA TAKUJI

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.