P

Inventor

CARTER RICHARD J

US51 patents
⚠️ This page may combine multiple inventors who share the name “CARTER RICHARD J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

15 patents
US9576952B2Feb 21, 2017

Integrated circuits with varying gate structures and fabrication methods

GLOBALFOUNDRIES INC421 citations98
US9362180B2Jun 7, 2016

Integrated circuit having multiple threshold voltages

GLOBALFOUNDRIES INC425 citations98
US8048791B2Nov 1, 2011

Method of forming a semiconductor device

GLOBALFOUNDRIES INC122 citations97
US9455198B1Sep 27, 2016

Methods of removing fins so as to form isolation structures on products that include FinFET semiconductor devices

GLOBALFOUNDRIES INC51 citations94
US9455201B2Sep 27, 2016

Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits

GLOBALFOUNDRIES INC18 citations83
US9105478B2Aug 11, 2015

Devices and methods of forming fins at tight fin pitches

GLOBALFOUNDRIES INC9 citations83
US9570586B2Feb 14, 2017

Fabrication methods facilitating integration of different device architectures

GLOBALFOUNDRIES INC4 citations73
US9324841B2Apr 26, 2016

Methods for preventing oxidation damage during FinFET fabrication

GLOBALFOUNDRIES INC3 citations72
US9219002B2Dec 22, 2015

Overlay performance for a fin field effect transistor device

GLOBALFOUNDRIES INC6 citations72
US9293586B2Mar 22, 2016

Epitaxial block layer for a fin field effect transistor device

GLOBALFOUNDRIES INC4 citations71
US9362176B2Jun 7, 2016

Uniform exposed raised structures for non-planar semiconductor devices

GLOBALFOUNDRIES INC2 citations63
US9093561B2Jul 28, 2015

Modified, etch-resistant gate structure(s) facilitating circuit fabrication

GLOBALFOUNDRIES INC2 citations63
US7704888B2Apr 27, 2010

Methods for removing photoresist from semiconductor structures having high-k dielectric material layers

GLOBALFOUNDRIES INC2 citations63
US9236312B2Jan 12, 2016

Preventing EPI damage for cap nitride strip scheme in a Fin-shaped field effect transistor (FinFET) device

GLOBALFOUNDRIES INC0 citations51
US9508850B2Nov 29, 2016

Epitaxial block layer for a fin field effect transistor device

GLOBALFOUNDRIES INC0 citations50

HEWLETT PACKARD DEVELOPMENT CO

11 patents

CARTER RICHARD J

6 patents

NANTERO INC

5 patents

HEWLETT PACKARD CO

3 patents

ADVANCED MICRO DEVICES INC

3 patents

LSI CORP

2 patents

HEWLETT PACKARD ENTPR DEV LP

2 patents

LSI LOGIC CORP

1 patent

BATTELLE MEMORIAL INSTITUTE

1 patent

WASYLUK JOANNA

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.