Inventor
BREIL NICOLAS L
US27 patents
⚠️ This page may combine multiple inventors who share the name “BREIL NICOLAS L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
14 patentsUS9449921B1Sep 20, 2016
Voidless contact metal structures
IBM17 citations92
US9911849B2Mar 6, 2018
Transistor and method of forming same
IBM8 citations84
US9166014B2Oct 20, 2015
Gate electrode with stabilized metal semiconductor alloy-semiconductor stack
IBM4 citations73
US9093424B2Jul 28, 2015
Dual silicide integration with laser annealing
IBM2 citations63
US9034749B2May 19, 2015
Gate electrode with stabilized metal semiconductor alloy-semiconductor stack
IBM2 citations63
US11088280B2Aug 10, 2021
Transistor and method of forming same
IBM0 citations62
US9997407B2Jun 12, 2018
Voidless contact metal structures
IBM0 citations52
US9859216B2Jan 2, 2018
Voidless contact metal structures
IBM0 citations52
US9653535B2May 16, 2017
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
IBM0 citations52
US9496329B2Nov 15, 2016
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
IBM0 citations52
US9472406B2Oct 18, 2016
Metal semiconductor alloy contact resistance improvement
IBM0 citations52
US9449827B2Sep 20, 2016
Metal semiconductor alloy contact resistance improvement
IBM1 citations52
US9443772B2Sep 13, 2016
Diffusion-controlled semiconductor contact creation
IBM1 citations52
US9299766B2Mar 29, 2016
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
IBM0 citations52
GLOBALFOUNDRIES INC
11 patentsUS9379012B2Jun 28, 2016
Oxide mediated epitaxial nickel disilicide alloy contact formation
GLOBALFOUNDRIES INC7 citations84
US9236345B2Jan 12, 2016
Oxide mediated epitaxial nickel disilicide alloy contact formation
GLOBALFOUNDRIES INC6 citations84
US9379207B2Jun 28, 2016
Stable nickel silicide formation with fluorine incorporation and related IC structure
GLOBALFOUNDRIES INC6 citations83
US10068920B2Sep 4, 2018
Silicon germanium fins on insulator formed by lateral recrystallization
GLOBALFOUNDRIES INC6 citations73
US9905692B2Feb 27, 2018
SOI FinFET fins with recessed fins and epitaxy in source drain region
GLOBALFOUNDRIES INC2 citations73
US10096609B2Oct 9, 2018
Modified tungsten silicon
GLOBALFOUNDRIES INC2 citations72
US9859403B1Jan 2, 2018
Multiple step thin film deposition method for high conformality
GLOBALFOUNDRIES INC4 citations71
US9335759B2May 10, 2016
Optimization of a laser anneal beam path for maximizing chip yield
GLOBALFOUNDRIES INC2 citations63
US10707167B2Jul 7, 2020
Contacts to semiconductor substrate and methods of forming same
GLOBALFOUNDRIES INC0 citations52
US9865546B2Jan 9, 2018
Contacts to semiconductor substrate and methods of forming same
GLOBALFOUNDRIES INC0 citations52
US9431534B2Aug 30, 2016
Asymmetric field effect transistor cap layer
GLOBALFOUNDRIES INC1 citations52