Inventor

ORTOLLAND CLAUDE

US29 patents

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ORTOLLAND CLAUDE

IBM

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-K dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage

Hydroxyl group termination for nucleation of a dielectric metallic oxide

Gate electrode with stabilized metal semiconductor alloy-semiconductor stack

Asymmetric high-k dielectric for reducing gate induced drain leakage

Gate electrode with stabilized metal semiconductor alloy-semiconductor stack

Hydroxyl group termination for nucleation of a dielectric metallic oxide

GLOBALFOUNDRIES INC

Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors

Field-effect transistors with a non-relaxed strained channel

Self-aligned nanotube structures

Buffer layer for modulating Vt across devices

Methods of modulating the morphology of epitaxial semiconductor material

Control of O-ingress into gate stack dielectric layer using oxygen permeable layer

GLOBALFOUNDRIES US INC

Heterojunction bipolar transistor

Virtual bulk in semiconductor on insulator technology

Heterojunction bipolar transistor with marker layer

TESSERA INC

Asymmetric high-k dielectric for reducing gate induced drain leakage

Asymmetric high-k dielectric for reducing gate induced drain leakage