P

Inventor

NISHIYAMA KATSUYA

JP59 patents
⚠️ This page may combine multiple inventors who share the name “NISHIYAMA KATSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

25 patents
US7596015B2Sep 29, 2009

Magnetoresistive element and magnetic memory

TOSHIBA KK94 citations98
US6765824B2Jul 20, 2004

Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory

TOSHIBA KK127 citations98
US7483291B2Jan 27, 2009

Magneto-resistance effect element, magnetic memory and magnetic head

TOSHIBA KK16 citations93
US6956765B2Oct 18, 2005

Magneto-resistance effect element, magnetic memory and magnetic head

TOSHIBA KK22 citations93
US6879475B2Apr 12, 2005

Magnetoresistive effect element having a ferromagnetic tunneling junction, magnetic memory, and magnetic head

TOSHIBA KK18 citations93
US6826078B2Nov 30, 2004

Magnetoresistive effect element and magnetic memory having the same

TOSHIBA KK18 citations93
US6717845B2Apr 6, 2004

Magnetic memory

TOSHIBA KK33 citations93
US8946837B2Feb 3, 2015

Semiconductor storage device with magnetoresistive element

TOSHIBA KK8 citations84
US6831855B2Dec 14, 2004

Magnetic memory

TOSHIBA KK13 citations84
US7898846B2Mar 1, 2011

Magnetoresistive element

TOSHIBA KK6 citations74
US6831857B2Dec 14, 2004

Magnetic memory

TOSHIBA KK6 citations74
US6807094B2Oct 19, 2004

Magnetic memory

TOSHIBA KK9 citations74
US9653138B1May 16, 2017

Magnetic memory and method of writing data

TOSHIBA KK2 citations73
US9196823B2Nov 24, 2015

Magnetoresistive effect element

TOSHIBA KK6 citations73
US8953369B2Feb 10, 2015

Magnetoresistive element and magnetic memory using the same

TOSHIBA KK4 citations73
US9373776B2Jun 21, 2016

Magnetoresistive element and magnetic memory using the same

TOSHIBA KK1 citations63
US8982614B2Mar 17, 2015

Magnetoresistive effect element and manufacturing method thereof

TOSHIBA KK3 citations63
US7355824B2Apr 8, 2008

Magnetoresistive effect element and magnetic memory having the same

TOSHIBA KK4 citations63
US7298644B2Nov 20, 2007

Magnetoresistance effect device having crystal grain boundary and method of manufacturing the same

TOSHIBA KK2 citations63
US6934184B2Aug 23, 2005

Magnetic memory

TOSHIBA KK2 citations63
US9385307B2Jul 5, 2016

Magnetoresistive element and method of manufacturing the same

TOSHIBA KK0 citations52
US9312477B2Apr 12, 2016

Semiconductor storage device with magnetoresistive element

TOSHIBA KK0 citations52
US9070866B2Jun 30, 2015

Magnetoresistive effect element and manufacturing method thereof

TOSHIBA KK0 citations52
US7474554B2Jan 6, 2009

Magnetoresistance effect device having crystal grain boundary and method of manufacturing the same

TOSHIBA KK0 citations52
US7245464B2Jul 17, 2007

Magnetic memory having a ferromagnetic tunneling junction

TOSHIBA KK0 citations52

NAGASE TOSHIHIKO

5 patents
US8098514B2Jan 17, 2012

Magnetoresistive element and magnetic memory

NAGASE TOSHIHIKO49 citations94
US8299552B2Oct 30, 2012

Magnetoresistive element and magnetic memory

NAGASE TOSHIHIKO33 citations92
US8670268B2Mar 11, 2014

Magnetoresistive element and magnetic memory using the same

NAGASE TOSHIHIKO9 citations84
US8665639B2Mar 4, 2014

Magnetoresistive element and magnetic memory

NAGASE TOSHIHIKO7 citations83
US8705269B2Apr 22, 2014

Magnetoresistive element and magnetic memory

NAGASE TOSHIHIKO6 citations73

DAIBOU TADAOMI

3 patents
US8305801B2Nov 6, 2012

Magnetoresistive element and magnetic memory

DAIBOU TADAOMI17 citations92
US8686521B2Apr 1, 2014

Magnetoresistive element and magnetic memory

DAIBOU TADAOMI7 citations84
US8547737B2Oct 1, 2013

Magnetoresistive element and magnetic memory

DAIBOU TADAOMI5 citations72

KITAGAWA EIJI

3 patents
US8218355B2Jul 10, 2012

Magnetoresistive element and magnetic memory

KITAGAWA EIJI23 citations92
US8750029B2Jun 10, 2014

Magnetoresistive effect element and magnetic memory

KITAGAWA EIJI14 citations84
US8502331B2Aug 6, 2013

Magnetoresistive effect element, magnetic memory

KITAGAWA EIJI5 citations72

TOSHIBA MEMORY CORP

3 patents
US10236077B2Mar 19, 2019

Screening method for magnetic storage device, screening apparatus for magnetic storage device, and manufacturing method of magnetic storage device

TOSHIBA MEMORY CORP2 citations73
US10230042B2Mar 12, 2019

Magnetoresistive element and method of manufacturing the same

TOSHIBA MEMORY CORP2 citations73
US9882119B2Jan 30, 2018

Magnetic memory device

TOSHIBA MEMORY CORP2 citations72

KAI TADASHI

2 patents
US8107281B2Jan 31, 2012

Magnetoresistive element and magnetic memory

KAI TADASHI23 citations91
US8208292B2Jun 26, 2012

Magnetoresistive element and magnetic memory

KAI TADASHI13 citations82

UEDA KOJI

2 patents
US8750030B2Jun 10, 2014

Magnetoresistive element and magnetic random access memory

UEDA KOJI4 citations73
US8669628B2Mar 11, 2014

Magnetoresistive element and magnetic memory using the same

UEDA KOJI5 citations73

NAKAYAMA MASAHIKO

2 patents
US8897060B2Nov 25, 2014

Magnetoresistance effect element and magnetic memory

NAKAYAMA MASAHIKO3 citations63
US8169817B2May 1, 2012

Magnetoresistive device and magnetic random access memory

NAKAYAMA MASAHIKO5 citations62

WATANABE DAISUKE

1 patent
US8659103B2Feb 25, 2014

Magnetoresistive element and magnetic memory using the same

WATANABE DAISUKE10 citations84

NISHIYAMA KATSUYA

1 patent
US8895162B2Nov 25, 2014

Magnetoresistive element and magnetic memory

NISHIYAMA KATSUYA13 citations81

EEH YOUNGMIN

1 patent
US9178137B2Nov 3, 2015

Magnetoresistive element and magnetic memory

EEH YOUNGMIN8 citations79

NAGAMINE MAKOTO

1 patent
US8143684B2Mar 27, 2012

Magnetoresistive element

NAGAMINE MAKOTO5 citations73

BROTHER IND LTD

1 patent
US11208230B2Dec 28, 2021

Printing apparatus including optical sensor located at conveying region through which label passes

BROTHER IND LTD0 citations52

Showing the top 50 of 59 patents by PatentIndex Score.