Inventor

HAENSCH WILFRIED E

US68 patents

⚠️ This page may combine multiple inventors who share the name “HAENSCH WILFRIED E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAENSCH WILFRIED E

IBM

Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts

Threshold voltage roll-off compensation using back-gated MOSFET devices for system high-performance and low standby power

Semiconductor structure with an L-shaped bottom plate

Method to control device threshold of SOI MOSFET&#39;s

Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate

Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

Method to control device threshold of SOI MOSFET&#39;s

Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts

Nanowire semiconductor device

Back-end transistors with highly doped low-temperature contacts

Flexible, stretchable electronic devices

Methods of applying substrate bias to SOI CMOS circuits

Substrate solution for back gate controlled SRAM with coexisting logic devices

Strain engineering in back end of the line

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Carbon nanotube transistor having extended contacts

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Field-effect photovoltaic elements

Flexible, stretchable electronic devices

Vertical polysilicon-germanium heterojunction bipolar transistor

Autonomous integrated circuits

Complementary bipolar inverter

Substrate solution for back gate controlled SRAM with coexisting logic devices

Hybrid-orientation technology buried n-well design

Methods and apparatus for inline variability measurement of integrated circuit components

Semiconductor structure with an L-shaped bottom

Semiconductor structure with an L-shaped bottom plate

Semiconductor structure with an L-shaped bottom plate

Partial sacrificial dummy gate with CMOS device with high-k metal gate

Field-effect localized emitter photovoltaic device

Nanowire semiconductor device

CAI JIN

Horizontal polysilicon-germanium heterojunction bipolar transistor

Complementary bipolar inverter

Vertical polysilicon-germanium heterojunction bipolar transistor

SOI CMOS circuits with substrate bias

SOI CMOS circuits with substrate bias

CHANG JOSEPHINE B

Replacement gate multigate transistor for embedded DRAM

Graphene devices and silicon field effect transistors in 3D hybrid integrated circuits

Graphene devices and silicon field effect transistors in 3D hybrid integrated circuits

DORIS BRUCE B

Tunnel field effect transistor

Tunnel field effect transistor

KHAKIFIROOZ ALI

Local interconnect structure self-aligned to gate structure

BRYANT ANDRES

FinFET structure having fully silicided fin

BASKER VEERARAGHAVAN S

Retrograde substrate for deep trench capacitors

CHANG LELAND

Contact scheme for FINFET structures with multiple FINs

HAENSCH WILFRIED E

FinFET-compatible metal-insulator-metal capacitor

AVOURIS PHAEDON

Graphene devices and semiconductor field effect transistors in 3D hybrid integrated circuits

HEKMATSHOARTABARI BAHMAN

Field-effect photovoltaic elements

CHER CHEN-YONG

Thermal cycling and gradient management in three-dimensional stacked architectures

Method to control device threshold of SOI MOSFET's

Method to control device threshold of SOI MOSFET's