P

Inventor

LEE JAE-GOO

KR114 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAE-GOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US7920116B2Apr 5, 2011

Method and circuit of selectively generating gray-scale voltage

SAMSUNG ELECTRONICS CO LTD60 citations98
US6204161B1Mar 20, 2001

Self aligned contact pad in a semiconductor device and method for forming the same

SAMSUNG ELECTRONICS CO LTD58 citations96
US6813216B2Nov 2, 2004

Method for discharging word line and semiconductor memory device using the same

SAMSUNG ELECTRONICS CO LTD29 citations93
US6661714B2Dec 9, 2003

Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same

SAMSUNG ELECTRONICS CO LTD27 citations93
US6649510B2Nov 18, 2003

Method of forming semiconductor memory device using a double layered capping pattern

SAMSUNG ELECTRONICS CO LTD16 citations93
US6649490B1Nov 18, 2003

Methods for forming integrated circuit devices through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region and integrated circuit devices formed thereby

SAMSUNG ELECTRONICS CO LTD27 citations93
US6614702B2Sep 2, 2003

Semiconductor memory devices and methods including coupling and/or floating isolation control signal lines

SAMSUNG ELECTRONICS CO LTD24 citations93
US6465310B2Oct 15, 2002

Methods of forming self-aligned contact pads on electrically conductive lines

SAMSUNG ELECTRONICS CO LTD20 citations93
US6403996B1Jun 11, 2002

Semiconductor memory device using double layered capping pattern and semiconductor memory device formed thereby

SAMSUNG ELECTRONICS CO LTD27 citations93
US6268252B1Jul 31, 2001

Method of forming self-aligned contact pads on electrically conductive lines

SAMSUNG ELECTRONICS CO LTD18 citations93
US7488644B2Feb 10, 2009

Method of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD20 citations92
US9634024B2Apr 25, 2017

Semiconductor device having vertical channel and air gap, and method of manufacturing thereof

SAMSUNG ELECTRONICS CO LTD28 citations91
US6177320B1Jan 23, 2001

Method for forming a self aligned contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD50 citations91
US9893074B2Feb 13, 2018

Semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations84
US9620511B2Apr 11, 2017

Vertical semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations84
US8970465B2Mar 3, 2015

Shared buffer display panel drive methods and systems

SAMSUNG ELECTRONICS CO LTD5 citations84
US7825919B2Nov 2, 2010

Source voltage removal detection circuit and display device including the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7800573B2Sep 21, 2010

Display panel driving circuit capable of minimizing circuit area by changing internal memory scheme in display panel and method using the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7056828B2Jun 6, 2006

Sidewall spacer structure for self-aligned contact and method for forming the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US6916738B2Jul 12, 2005

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US6337275B1Jan 8, 2002

Method for forming a self aligned contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations84
US7466312B2Dec 16, 2008

Level shifter circuit and method for controlling voltage levels of clock signal and inverted clock signal for driving gate lines of amorphous silicon gate-thin film transistor liquid crystal display

SAMSUNG ELECTRONICS CO LTD18 citations83
US7180118B2Feb 20, 2007

Semiconductor device including storage node and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations74
US7049203B2May 23, 2006

Semiconductor device having a capacitor and method of fabricating same

SAMSUNG ELECTRONICS CO LTD10 citations74
US6870268B2Mar 22, 2005

Integrated circuit devices formed through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region

SAMSUNG ELECTRONICS CO LTD11 citations74
US6709915B2Mar 23, 2004

Methods of fabricating integrated circuit memory devices

SAMSUNG ELECTRONICS CO LTD6 citations74
US6621749B2Sep 16, 2003

Integrated circuit memory devices providing per-bit redundancy and methods of operating same

SAMSUNG ELECTRONICS CO LTD8 citations74
US6458680B2Oct 1, 2002

Method of fabricating contact pads of a semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations74
US6355547B1Mar 12, 2002

Method of forming a self-aligned contact pad for a semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations74
US10199389B2Feb 5, 2019

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations73
US9899412B2Feb 20, 2018

Vertical semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations73
US9646984B2May 9, 2017

Non-volatile memory device

SAMSUNG ELECTRONICS CO LTD5 citations73
US7230471B2Jun 12, 2007

Charge pump circuit of LCD driver including driver having variable current driving capability

SAMSUNG ELECTRONICS CO LTD8 citations73

LEE JAE-GOO

4 patents

LG SEMICON CO LTD

4 patents

HYUNDAI ELECTRONICS IND

2 patents

WOO JAE HYUCK

2 patents

KIM IN-SUK

2 patents

CHANG SUNG-IL

1 patent

SAMSUNG DISPLAY CO LTD

1 patent

KANG WON-SIK

1 patent

Showing the top 50 of 114 patents by PatentIndex Score.