Inventor
LEE JAE-GOO
KR114 patents
⚠️ This page may combine multiple inventors who share the name “LEE JAE-GOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS7920116B2Apr 5, 2011
Method and circuit of selectively generating gray-scale voltage
SAMSUNG ELECTRONICS CO LTD60 citations98
US6204161B1Mar 20, 2001
Self aligned contact pad in a semiconductor device and method for forming the same
SAMSUNG ELECTRONICS CO LTD58 citations96
US6813216B2Nov 2, 2004
Method for discharging word line and semiconductor memory device using the same
SAMSUNG ELECTRONICS CO LTD29 citations93
US6661714B2Dec 9, 2003
Integrated circuit memory devices having sense amplifiers therein that receive nominal and boosted supply voltages when active and methods of operating same
SAMSUNG ELECTRONICS CO LTD27 citations93
US6649510B2Nov 18, 2003
Method of forming semiconductor memory device using a double layered capping pattern
SAMSUNG ELECTRONICS CO LTD16 citations93
US6649490B1Nov 18, 2003
Methods for forming integrated circuit devices through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region and integrated circuit devices formed thereby
SAMSUNG ELECTRONICS CO LTD27 citations93
US6614702B2Sep 2, 2003
Semiconductor memory devices and methods including coupling and/or floating isolation control signal lines
SAMSUNG ELECTRONICS CO LTD24 citations93
US6465310B2Oct 15, 2002
Methods of forming self-aligned contact pads on electrically conductive lines
SAMSUNG ELECTRONICS CO LTD20 citations93
US6403996B1Jun 11, 2002
Semiconductor memory device using double layered capping pattern and semiconductor memory device formed thereby
SAMSUNG ELECTRONICS CO LTD27 citations93
US6268252B1Jul 31, 2001
Method of forming self-aligned contact pads on electrically conductive lines
SAMSUNG ELECTRONICS CO LTD18 citations93
US7488644B2Feb 10, 2009
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD20 citations92
US9634024B2Apr 25, 2017
Semiconductor device having vertical channel and air gap, and method of manufacturing thereof
SAMSUNG ELECTRONICS CO LTD28 citations91
US6177320B1Jan 23, 2001
Method for forming a self aligned contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD50 citations91
US9893074B2Feb 13, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations84
US9620511B2Apr 11, 2017
Vertical semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations84
US8970465B2Mar 3, 2015
Shared buffer display panel drive methods and systems
SAMSUNG ELECTRONICS CO LTD5 citations84
US7825919B2Nov 2, 2010
Source voltage removal detection circuit and display device including the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7800573B2Sep 21, 2010
Display panel driving circuit capable of minimizing circuit area by changing internal memory scheme in display panel and method using the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US7056828B2Jun 6, 2006
Sidewall spacer structure for self-aligned contact and method for forming the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6916738B2Jul 12, 2005
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US6337275B1Jan 8, 2002
Method for forming a self aligned contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations84
US7466312B2Dec 16, 2008
Level shifter circuit and method for controlling voltage levels of clock signal and inverted clock signal for driving gate lines of amorphous silicon gate-thin film transistor liquid crystal display
SAMSUNG ELECTRONICS CO LTD18 citations83
US7180118B2Feb 20, 2007
Semiconductor device including storage node and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations74
US7049203B2May 23, 2006
Semiconductor device having a capacitor and method of fabricating same
SAMSUNG ELECTRONICS CO LTD10 citations74
US6870268B2Mar 22, 2005
Integrated circuit devices formed through selective etching of an insulation layer to increase the self-aligned contact area adjacent a semiconductor region
SAMSUNG ELECTRONICS CO LTD11 citations74
US6709915B2Mar 23, 2004
Methods of fabricating integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD6 citations74
US6621749B2Sep 16, 2003
Integrated circuit memory devices providing per-bit redundancy and methods of operating same
SAMSUNG ELECTRONICS CO LTD8 citations74
US6458680B2Oct 1, 2002
Method of fabricating contact pads of a semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations74
US6355547B1Mar 12, 2002
Method of forming a self-aligned contact pad for a semiconductor device
SAMSUNG ELECTRONICS CO LTD13 citations74
US10199389B2Feb 5, 2019
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9899412B2Feb 20, 2018
Vertical semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US9646984B2May 9, 2017
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD5 citations73
US7230471B2Jun 12, 2007
Charge pump circuit of LCD driver including driver having variable current driving capability
SAMSUNG ELECTRONICS CO LTD8 citations73
LEE JAE-GOO
4 patentsUS8455940B2Jun 4, 2013
Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
LEE JAE-GOO49 citations97
US8969947B2Mar 3, 2015
Vertical memory devices with quantum-dot charge storage cells
LEE JAE-GOO9 citations84
US8877626B2Nov 4, 2014
Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device
LEE JAE-GOO12 citations84
US9293172B2Mar 22, 2016
Vertical type semiconductor device and method for manufacturing the same
LEE JAE-GOO14 citations83
LG SEMICON CO LTD
4 patentsUS5966337AOct 12, 1999
Method for overdriving bit line sense amplifier
LG SEMICON CO LTD26 citations93
US6075736AJun 13, 2000
Semiconductor memory device with improved sense amplifier driver
LG SEMICON CO LTD23 citations92
US6154079ANov 28, 2000
Negative delay circuit operable in wide band frequency
LG SEMICON CO LTD14 citations74
US5945861AAug 31, 1999
Clock signal modeling circuit with negative delay
LG SEMICON CO LTD8 citations73
HYUNDAI ELECTRONICS IND
2 patentsWOO JAE HYUCK
2 patentsKIM IN-SUK
2 patentsCHANG SUNG-IL
1 patentSAMSUNG DISPLAY CO LTD
1 patentKANG WON-SIK
1 patentShowing the top 50 of 114 patents by PatentIndex Score.