Inventor

CHOI MOO-RYM

KR2 patents

Patents

2 patents

US9634024B2Apr 25, 2017

Semiconductor device having vertical channel and air gap, and method of manufacturing thereof

SAMSUNG ELECTRONICS CO LTD28 citations91

US10283204B2May 7, 2019

Methods of operating nonvolatile memory devices including erasing a sub-block

SAMSUNG ELECTRONICS CO LTD9 citations81