Inventor
LEIB JEFFREY S
US26 patents
Patents
26 patentsUS10121875B1Nov 6, 2018
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP61 citations98
US10886383B2Jan 5, 2021
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP4 citations92
US10741669B2Aug 11, 2020
Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication
INTEL CORP10 citations92
US11664439B2May 30, 2023
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP2 citations84
US11088261B2Aug 10, 2021
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations84
US10957782B2Mar 23, 2021
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP2 citations84
US10854732B2Dec 1, 2020
Dual metal gate structures for advanced integrated circuit structure fabrication
INTEL CORP1 citations83
US10840151B2Nov 17, 2020
Dual metal silicide structures for advanced integrated circuit structure fabrication
INTEL CORP5 citations83
US10790378B2Sep 29, 2020
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations83
US10727313B2Jul 28, 2020
Dual metal gate structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations83
US11018222B1May 25, 2021
Metallization in integrated circuit structures
INTEL CORP16 citations82
US9704744B2Jul 11, 2017
Method of forming a wrap-around contact on a semiconductor device
INTEL CORP5 citations81
US12255247B2Mar 18, 2025
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations73
US11948997B2Apr 2, 2024
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations73
US11955532B2Apr 9, 2024
Dual metal gate structure having portions of metal gate layers in contact with a gate dielectric
INTEL CORP0 citations72
US11508626B2Nov 22, 2022
Dual metal silicide structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations72
US11482611B2Oct 25, 2022
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations72
US11342445B2May 24, 2022
Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations72
US10796968B2Oct 6, 2020
Dual metal silicide structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations72
US11063151B2Jul 13, 2021
Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures
INTEL CORP0 citations62
US12225740B2Feb 11, 2025
Dual metal silicide structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations61
US11961767B2Apr 16, 2024
Dual metal silicide structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations61
US12051698B2Jul 30, 2024
Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer
INTEL CORP0 citations59
US10297499B2May 21, 2019
Method of forming a wrap-around contact on a semiconductor device
INTEL CORP0 citations49
US10096513B2Oct 9, 2018
Direct plasma densification process and semiconductor devices
INTEL CORP0 citations48
US9711399B2Jul 18, 2017
Direct plasma densification process and semiconductor devices
INTEL CORP1 citations48