P

Inventor

YAN CHUN

US48 patents
⚠️ This page may combine multiple inventors who share the name “YAN CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

36 patents
US9114438B2Aug 25, 2015

Copper residue chamber clean

APPLIED MATERIALS INC184 citations99
US6331380B1Dec 18, 2001

Method of pattern etching a low K dielectric layer

APPLIED MATERIALS INC159 citations98
US6080529AJun 27, 2000

Method of etching patterned layers useful as masking during subsequent etching or for damascene structures

APPLIED MATERIALS INC551 citations98
US6547977B1Apr 15, 2003

Method for etching low k dielectrics

APPLIED MATERIALS INC320 citations97
US6458516B1Oct 1, 2002

Method of etching dielectric layers using a removable hardmask

APPLIED MATERIALS INC113 citations97
US6352049B1Mar 5, 2002

Plasma assisted processing chamber with separate control of species density

APPLIED MATERIALS INC498 citations96
US7320942B2Jan 22, 2008

Method for removal of metallic residue after plasma etching of a metal layer

APPLIED MATERIALS INC19 citations92
US6620289B1Sep 16, 2003

Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system

APPLIED MATERIALS INC22 citations92
US6296780B1Oct 2, 2001

System and method for etching organic anti-reflective coating from a substrate

APPLIED MATERIALS INC44 citations92
US7374636B2May 20, 2008

Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor

APPLIED MATERIALS INC21 citations91
US6537918B2Mar 25, 2003

Method for etching silicon oxynitride and dielectric antireflection coatings

APPLIED MATERIALS INC22 citations90
US6291356B1Sep 18, 2001

Method for etching silicon oxynitride and dielectric antireflection coatings

APPLIED MATERIALS INC18 citations90
US6933239B2Aug 23, 2005

Method for removing conductive residue

APPLIED MATERIALS INC19 citations84
US6649532B1Nov 18, 2003

Methods for etching an organic anti-reflective coating

APPLIED MATERIALS INC16 citations84
US7316199B2Jan 8, 2008

Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber

APPLIED MATERIALS INC9 citations83
US10090147B2Oct 2, 2018

Integrated system and method for source/drain engineering

APPLIED MATERIALS INC6 citations82
US10236190B2Mar 19, 2019

Method for wafer outgassing control

APPLIED MATERIALS INC2 citations73
US10205002B2Feb 12, 2019

Method of epitaxial growth shape control for CMOS applications

APPLIED MATERIALS INC4 citations73
US10177017B1Jan 8, 2019

Method for conditioning a processing chamber for steady etching rate control

APPLIED MATERIALS INC4 citations73
US10115607B2Oct 30, 2018

Method and apparatus for wafer outgassing control

APPLIED MATERIALS INC2 citations73
US10043667B2Aug 7, 2018

Integrated method for wafer outgassing reduction

APPLIED MATERIALS INC3 citations73
US10002759B2Jun 19, 2018

Method of forming structures with V shaped bottom on silicon substrate

APPLIED MATERIALS INC3 citations73
US9905412B2Feb 27, 2018

Method and solution for cleaning InGaAs (or III-V) substrates

APPLIED MATERIALS INC2 citations73
US9653291B2May 16, 2017

Method for removing native oxide and residue from a III-V group containing surface

APPLIED MATERIALS INC2 citations73
US10243063B2Mar 26, 2019

Method of uniform channel formation

APPLIED MATERIALS INC1 citations62
US11649559B2May 16, 2023

Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate

APPLIED MATERIALS INC0 citations52
US10438796B2Oct 8, 2019

Method for removing native oxide and residue from a III-V group containing surface

APPLIED MATERIALS INC0 citations52
US10224421B2Mar 5, 2019

Self-aligned process for sub-10nm fin formation

APPLIED MATERIALS INC0 citations52
US10147596B2Dec 4, 2018

Methods and solutions for cleaning INGAAS (or III-V) substrates

APPLIED MATERIALS INC0 citations52
US9852903B2Dec 26, 2017

System and method in indium-gallium-arsenide channel height control for sub 7nm FinFET

APPLIED MATERIALS INC0 citations52
US10504717B2Dec 10, 2019

Integrated system and method for source/drain engineering

APPLIED MATERIALS INC0 citations51
US9805914B2Oct 31, 2017

Methods for removing contamination from surfaces in substrate processing systems

APPLIED MATERIALS INC0 citations51
US9653282B2May 16, 2017

Silicon-containing substrate cleaning procedure

APPLIED MATERIALS INC0 citations49
US10332739B2Jun 25, 2019

UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabrication

APPLIED MATERIALS INC0 citations42
US9865706B2Jan 9, 2018

Integrated process and structure to form III-V channel for sub-7nm CMOS devices

APPLIED MATERIALS INC0 citations42
US9472416B2Oct 18, 2016

Methods of surface interface engineering

APPLIED MATERIALS INC0 citations39

MATTSON TECH INC

6 patents

(unassigned)

2 patents

IBM

2 patents

LAM RES CORP

1 patent

HANGZHOU HIKVISION DIGITAL TEC

1 patent