Inventor
YAN CHUN
US48 patents
⚠️ This page may combine multiple inventors who share the name “YAN CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
36 patentsUS9114438B2Aug 25, 2015
Copper residue chamber clean
APPLIED MATERIALS INC184 citations99
US6331380B1Dec 18, 2001
Method of pattern etching a low K dielectric layer
APPLIED MATERIALS INC159 citations98
US6080529AJun 27, 2000
Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
APPLIED MATERIALS INC551 citations98
US6547977B1Apr 15, 2003
Method for etching low k dielectrics
APPLIED MATERIALS INC320 citations97
US6458516B1Oct 1, 2002
Method of etching dielectric layers using a removable hardmask
APPLIED MATERIALS INC113 citations97
US6352049B1Mar 5, 2002
Plasma assisted processing chamber with separate control of species density
APPLIED MATERIALS INC498 citations96
US7320942B2Jan 22, 2008
Method for removal of metallic residue after plasma etching of a metal layer
APPLIED MATERIALS INC19 citations92
US6620289B1Sep 16, 2003
Method and apparatus for asymmetric gas distribution in a semiconductor wafer processing system
APPLIED MATERIALS INC22 citations92
US6296780B1Oct 2, 2001
System and method for etching organic anti-reflective coating from a substrate
APPLIED MATERIALS INC44 citations92
US7374636B2May 20, 2008
Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
APPLIED MATERIALS INC21 citations91
US6537918B2Mar 25, 2003
Method for etching silicon oxynitride and dielectric antireflection coatings
APPLIED MATERIALS INC22 citations90
US6291356B1Sep 18, 2001
Method for etching silicon oxynitride and dielectric antireflection coatings
APPLIED MATERIALS INC18 citations90
US6933239B2Aug 23, 2005
Method for removing conductive residue
APPLIED MATERIALS INC19 citations84
US6649532B1Nov 18, 2003
Methods for etching an organic anti-reflective coating
APPLIED MATERIALS INC16 citations84
US7316199B2Jan 8, 2008
Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber
APPLIED MATERIALS INC9 citations83
US10090147B2Oct 2, 2018
Integrated system and method for source/drain engineering
APPLIED MATERIALS INC6 citations82
US10236190B2Mar 19, 2019
Method for wafer outgassing control
APPLIED MATERIALS INC2 citations73
US10205002B2Feb 12, 2019
Method of epitaxial growth shape control for CMOS applications
APPLIED MATERIALS INC4 citations73
US10177017B1Jan 8, 2019
Method for conditioning a processing chamber for steady etching rate control
APPLIED MATERIALS INC4 citations73
US10115607B2Oct 30, 2018
Method and apparatus for wafer outgassing control
APPLIED MATERIALS INC2 citations73
US10043667B2Aug 7, 2018
Integrated method for wafer outgassing reduction
APPLIED MATERIALS INC3 citations73
US10002759B2Jun 19, 2018
Method of forming structures with V shaped bottom on silicon substrate
APPLIED MATERIALS INC3 citations73
US9905412B2Feb 27, 2018
Method and solution for cleaning InGaAs (or III-V) substrates
APPLIED MATERIALS INC2 citations73
US9653291B2May 16, 2017
Method for removing native oxide and residue from a III-V group containing surface
APPLIED MATERIALS INC2 citations73
US10243063B2Mar 26, 2019
Method of uniform channel formation
APPLIED MATERIALS INC1 citations62
US11649559B2May 16, 2023
Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate
APPLIED MATERIALS INC0 citations52
US10438796B2Oct 8, 2019
Method for removing native oxide and residue from a III-V group containing surface
APPLIED MATERIALS INC0 citations52
US10224421B2Mar 5, 2019
Self-aligned process for sub-10nm fin formation
APPLIED MATERIALS INC0 citations52
US10147596B2Dec 4, 2018
Methods and solutions for cleaning INGAAS (or III-V) substrates
APPLIED MATERIALS INC0 citations52
US9852903B2Dec 26, 2017
System and method in indium-gallium-arsenide channel height control for sub 7nm FinFET
APPLIED MATERIALS INC0 citations52
US10504717B2Dec 10, 2019
Integrated system and method for source/drain engineering
APPLIED MATERIALS INC0 citations51
US9805914B2Oct 31, 2017
Methods for removing contamination from surfaces in substrate processing systems
APPLIED MATERIALS INC0 citations51
US9653282B2May 16, 2017
Silicon-containing substrate cleaning procedure
APPLIED MATERIALS INC0 citations49
US10332739B2Jun 25, 2019
UV radiation system and method for arsenic outgassing control in sub 7nm CMOS fabrication
APPLIED MATERIALS INC0 citations42
US9865706B2Jan 9, 2018
Integrated process and structure to form III-V channel for sub-7nm CMOS devices
APPLIED MATERIALS INC0 citations42
US9472416B2Oct 18, 2016
Methods of surface interface engineering
APPLIED MATERIALS INC0 citations39
MATTSON TECH INC
6 patentsUS11043393B2Jun 22, 2021
Ozone treatment for selective silicon nitride etch over silicon
MATTSON TECH INC5 citations72
US11276560B2Mar 15, 2022
Spacer etching process
MATTSON TECH INC4 citations71
US11387115B2Jul 12, 2022
Silicon mandrel etch after native oxide punch-through
MATTSON TECH INC4 citations70
US11651977B2May 16, 2023
Processing of workpieces using fluorocarbon plasma
MATTSON TECH INC0 citations59
US11462413B2Oct 4, 2022
Processing of workpieces using deposition process and etch process
MATTSON TECH INC0 citations50
US11195718B2Dec 7, 2021
Spacer open process by dual plasma
MATTSON TECH INC0 citations49