Inventor
HUESKEN HOLGER
DE15 patents
⚠️ This page may combine multiple inventors who share the name “HUESKEN HOLGER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
13 patentsUS7112868B2Sep 26, 2006
IGBT with monolithic integrated antiparallel diode
INFINEON TECHNOLOGIES AG26 citations92
US9419080B2Aug 16, 2016
Semiconductor device with recombination region
INFINEON TECHNOLOGIES AG3 citations73
US7005761B2Feb 28, 2006
Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configuration
INFINEON TECHNOLOGIES AG6 citations62
US11532508B2Dec 20, 2022
Semiconductor device having contact layers and manufacturing method
INFINEON TECHNOLOGIES AG0 citations61
US10950494B2Mar 16, 2021
Semiconductor device including first and second contact layers and manufacturing method
INFINEON TECHNOLOGIES AG0 citations61
US9041120B2May 26, 2015
Power MOS transistor with integrated gate-resistor
INFINEON TECHNOLOGIES AG3 citations61
US9013027B2Apr 21, 2015
Semiconductor device, a semiconductor wafer structure, and a method for forming a semiconductor wafer structure
INFINEON TECHNOLOGIES AG0 citations52
US9859272B2Jan 2, 2018
Semiconductor device with a reduced band gap zone
INFINEON TECHNOLOGIES AG1 citations51
US9548370B2Jan 17, 2017
Transistor device with integrated gate-resistor
INFINEON TECHNOLOGIES AG0 citations50
US10998399B2May 4, 2021
Power semiconductor device
INFINEON TECHNOLOGIES AG0 citations49
US9577080B2Feb 21, 2017
Power semiconductor device
INFINEON TECHNOLOGIES AG0 citations41
US9515149B2Dec 6, 2016
Power semiconductor device
INFINEON TECHNOLOGIES AG0 citations41
US9490354B2Nov 8, 2016
Insulated gate bipolar transistor
INFINEON TECHNOLOGIES AG0 citations41