Inventor
SCHAEFFER CARSTEN
AT34 patents
⚠️ This page may combine multiple inventors who share the name “SCHAEFFER CARSTEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
22 patentsUS7514750B2Apr 7, 2009
Semiconductor device and fabrication method suitable therefor
INFINEON TECHNOLOGIES AG22 citations92
US6815769B2Nov 9, 2004
Power semiconductor component, IGBT and field-effect transistor
INFINEON TECHNOLOGIES AG35 citations92
US6541818B2Apr 1, 2003
Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region
INFINEON TECHNOLOGIES AG35 citations92
US8367532B2Feb 5, 2013
Semiconductor device and fabrication method
INFINEON TECHNOLOGIES AG5 citations84
US7253475B2Aug 7, 2007
Power transistor cell and power transistor component with fusible link
INFINEON TECHNOLOGIES AG7 citations74
US9337185B2May 10, 2016
Semiconductor devices
INFINEON TECHNOLOGIES AG5 citations72
US11139375B2Oct 5, 2021
Semiconductor device and method of manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG0 citations62
US10410911B2Sep 10, 2019
Buried insulator regions and methods of formation thereof
INFINEON TECHNOLOGIES AG1 citations62
US9362349B2Jun 7, 2016
Semiconductor device with charge carrier lifetime reduction means
INFINEON TECHNOLOGIES AG2 citations61
US12363961B2Jul 15, 2025
Semiconductor device
INFINEON TECHNOLOGIES AG0 citations59
US12183696B2Dec 31, 2024
Semiconductor device including bonding pad metal layer structure
INFINEON TECHNOLOGIES AG0 citations58
US12046509B2Jul 23, 2024
Semiconductor device protection using an anti-reflective layer
INFINEON TECHNOLOGIES AG0 citations58
US11764176B2Sep 19, 2023
Semiconductor device including bonding pad metal layer structure
INFINEON TECHNOLOGIES AG0 citations58
US9571087B2Feb 14, 2017
Method of operating a reverse conducting IGBT
INFINEON TECHNOLOGIES AG0 citations52
US9231581B2Jan 5, 2016
Method of operating a reverse conducting IGBT
INFINEON TECHNOLOGIES AG0 citations52
US10777506B2Sep 15, 2020
Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US10475743B2Nov 12, 2019
Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US9859272B2Jan 2, 2018
Semiconductor device with a reduced band gap zone
INFINEON TECHNOLOGIES AG1 citations51
US10002930B2Jun 19, 2018
Forming a contact layer on a semiconductor body
INFINEON TECHNOLOGIES AG0 citations50
US9711621B2Jul 18, 2017
Trench transistor having a doped semiconductor region
INFINEON TECHNOLOGIES AG0 citations50
US8815686B2Aug 26, 2014
Lateral trench transistor, as well as a method for its production
INFINEON TECHNOLOGIES AG0 citations50
US9859395B2Jan 2, 2018
Semiconductor device with a passivation layer
INFINEON TECHNOLOGIES AG0 citations48
INFINEON TECHNOLOGIES AUSTRIA
4 patentsUS7538412B2May 26, 2009
Semiconductor device with a field stop zone
INFINEON TECHNOLOGIES AUSTRIA144 citations98
US7880200B2Feb 1, 2011
Semiconductor device including a free wheeling diode
INFINEON TECHNOLOGIES AUSTRIA10 citations84
US8003502B2Aug 23, 2011
Semiconductor device and fabrication method
INFINEON TECHNOLOGIES AUSTRIA4 citations74
US8003456B2Aug 23, 2011
Method for producing a semiconductor component
INFINEON TECHNOLOGIES AUSTRIA2 citations63
INFINEON TECHNOLOGIES AUSTRIA AG
2 patentsUS11171049B2Nov 9, 2021
Semiconductor device and a method of forming the semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations60
US10332793B2Jun 25, 2019
Self-organizing barrier layer disposed between a metallization layer and a semiconductor region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50